SMPS IGBT

PD - 95615

IRGB20B60PD1PbF

WARP2 SERIES IGBT WITH

ULTRAFAST SOFT RECOVERY DIODE

Telecom and Server SMPS

PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Lead-Free

Equivalent MOSFET
Parameters
RCE(on) typ. = 158m
ID (FET equivalent) = 20A

Features

VCES = 600V
VCE(on) typ. = 2.05V
@ VGE = 15V IC = 13.0A

Applications

NPT Technology, Positive Temperature Coefficient

Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability

n-channel

Benefits

E
C
G

Parallel Operation for Higher Current Applications

Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz

TO-220AB

Absolute Maximum Ratings

Max.

Units

VCES

Collector-to-Emitter Voltage

Parameter

600

IC @ TC = 25C

Continuous Collector Current

40

IC @ TC = 100C

Continuous Collector Current

22

ICM

80

ILM

Pulse Collector Current (Ref. Fig. C.T.4)

Clamped Inductive Load Current

IF @ TC = 25C

Diode Continous Forward Current

10

IF @ TC = 100C

Diode Continous Forward Current

Maximum Repetitive Forward Current

IFRM

80

16

VGE

Gate-to-Emitter Voltage

20

PD @ TC = 25C

Maximum Power Dissipation

215

PD @ TC = 100C

Maximum Power Dissipation

TJ

Operating Junction and

TSTG

Storage Temperature Range

86
-55 to +150
C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw

10 lbfin (1.1 Nm)

Thermal Resistance
Min.

Typ.

Max.

Units

RJC (IGBT)

Thermal Resistance Junction-to-Case-(each IGBT)

Parameter

0.58

C/W

RJC (Diode)

Thermal Resistance Junction-to-Case-(each Diode)

5.0

RCS

Thermal Resistance, Case-to-Sink (flat, greased surface)

0.50

RJA

Thermal Resistance, Junction-to-Ambient (typical socket mount)

80

Weight

2 (0.07)

g (oz)

8/2/04

IRGB20B60PD1PbF

Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Parameter

Min.

Typ.

600

Temperature Coeff. of Breakdown Voltage

0.32

Internal Gate Resistance

4.3

2.05

2.35

2.50

2.80

V(BR)CES

Collector-to-Emitter Breakdown Voltage

V(BR)CES/TJ

RG
VCE(on)

Collector-to-Emitter Saturation Voltage

Max. Units

Conditions

V/C VGE = 0V, IC = 1mA (25C-125C)

1MHz, Open Collector

IC = 13A, VGE = 15V

IC = 20A, VGE = 15V

2.65

3.00

IC = 13A, VGE = 15V, TJ = 125C

3.30

3.70

IC = 20A, VGE = 15V, TJ = 125C

IC = 250A
V
mV/C VCE = VGE, IC = 1.0mA
S VCE = 50V, IC = 40A, PW = 80s

VGE(th)

Gate Threshold Voltage

3.0

4.0

5.0

VGE(th)/TJ

Threshold Voltage temp. coefficient

-11

gfe
ICES

Forward Transconductance

19

Collector-to-Emitter Leakage Current

1.0

250

VGE = 0V, VCE = 600V

0.1

mA

VGE = 0V, VCE = 600V, TJ = 125C

1.5

1.8

1.4

1.7

100

VFM
IGES

Diode Forward Voltage Drop

Gate-to-Emitter Leakage Current

Ref.Fig

VGE = 0V, IC = 500A

4, 5,6,8,9

7,8,9

IF = 4.0A, VGE = 0V

10

IF = 4.0A, VGE = 0V, TJ = 125C

nA

VGE = 20V, VCE = 0V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Min.

Typ.

Qg
Qgc

Total Gate Charge (turn-on)

Parameter

68

Max. Units
102

Gate-to-Collector Charge (turn-on)

24

36

Conditions

nC

17

VCC = 400V

CT1

Qge

Gate-to-Emitter Charge (turn-on)

10

15

Eon

Turn-On Switching Loss

95

140

Eoff

Turn-Off Switching Loss

100

145

Etotal

Total Switching Loss

195

285

TJ = 25C

td(on)

Turn-On delay time

20

26

IC = 13A, VCC = 390V

VGE = +15V, RG = 10, L = 200H

tr

Rise time

5.0

7.0

td(off)

Turn-Off delay time

115

135

VGE = 15V
IC = 13A, VCC = 390V
J

ns

TJ = 25C

Fall time

6.0

8.0

Turn-On Switching Loss

165

215

Eoff

Turn-Off Switching Loss

150

195

Etotal

Total Switching Loss

315

410

TJ = 125C

td(on)

Turn-On delay time

19

25

IC = 13A, VCC = 390V

tr

Rise time

6.0

8.0

td(off)

Turn-Off delay time

125

140

tf

Fall time

13

17

Cies

Input Capacitance

1560

VGE = 0V
VCC = 30V

Output Capacitance

95

20

Coes eff.

Reverse Transfer Capacitance

Effective Output Capacitance (Time Related)

83

Coes eff. (ER)

Effective Output Capacitance (Energy Related)

61

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

trr

Diode Reverse Recovery Time

28

42

38

57

40

60

70

105

2.9

5.2

3.7

6.7

CT3

f

tf

Cres

CT3

VGE = +15V, RG = 10, L = 200H

Eon

Coes

Ref.Fig

IC = 13A

IC = 13A, VCC = 390V

J

ns

11,13

WF1,WF2
CT3

VGE = +15V, RG = 10, L = 200H

TJ = 125C

pF

CT3

VGE = +15V, RG = 10, L = 200H

12,14

f

WF1,WF2

16

f = 1Mhz
VGE = 0V, VCE = 0V to 480V

15

TJ = 150C, IC = 80A

VCC = 480V, Vp =600V

CT2

Rg = 22, VGE = +15V to 0V

Qrr

Diode Reverse Recovery Charge

Irr

Peak Reverse Recovery Current

Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ. / IC, where VCE(on) typ. = 2.05V and IC = 13A.

ns
nC

TJ = 25C

IF = 4.0A, VR = 200V,

19

TJ = 125C

di/dt = 200A/s
IF = 4.0A, VR = 200V,

21

TJ = 25C

di/dt = 200A/s
IF = 4.0A, VR = 200V,

19,20,21,22

TJ = 125C

di/dt = 200A/s

TJ = 25C
TJ = 125C

CT5

ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25C for

applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.

VCC = 80% (VCES), VGE = 15V, L = 28H, RG = 22.

Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.

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IRGB20B60PD1PbF
250

45
40

200

35

Ptot (W)

30
IC (A)

25
20

150

100

15
10

50

0
0

20

40

60

80

100 120 140 160

20

40

60

80

100 120 140 160

T C (C)

T C (C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

Fig. 2 - Power Dissipation vs. Case

Temperature

100

40
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V

35
30
10
IC A)

ICE (A)

25
20
15

10
5
0

0
10

100

1000

VCE (V)

Fig. 3 - Reverse Bias SOA

TJ = 150C; VGE =15V

40

VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V

35
30

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

35
30
25
ICE (A)

25
ICE (A)

Fig. 4 - Typ. IGBT Output Characteristics

TJ = -40C; tp = 80s

40

20

20

15

15

10

10

5
0

0
0

VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics

TJ = 25C; tp = 80s

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3
VCE (V)

VCE (V)

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 125C; tp = 80s

IRGB20B60PD1PbF
450

10

400

9
8

350

T J = 25C
TJ = 125C

VCE (V)

ICE (A)

300

ICE = 20A
ICE = 13A

250
200

ICE = 8.0A

5
4

150

100

50

1
0

0
0

10

15

20

10

Fig. 7 - Typ. Transfer Characteristics

VCE = 50V; tp = 10s

20

Fig. 8 - Typical VCE vs. VGE

TJ = 25C

10

Instantaneous Forward Current - IF (A)

100

VCE (V)

15

VGE (V)

VGE (V)

ICE = 20A

ICE = 13A

ICE = 8.0A

5
4
3
2

TJ = 150C

10

TJ = 125C
T =
J

25C

1
0
0

10

15

0.1
0.0

20

1.0

2.0

3.0

4.0

Forward Voltage Drop - V

VGE (V)

Fig. 9 - Typical VCE vs. VGE

TJ = 125C

5.0

6.0

(V)
FM

Fig. 10 - Typ. Diode Forward Characteristics

tp = 80s

350

1000

300
EON

tdOFF

Swiching Time (ns)

Energy (J)

250
200

EOFF

150
100

100

tdON
tF

10

tR

50
0

10

15

20

25

IC (A)

Fig. 11 - Typ. Energy Loss vs. IC

TJ = 125C; L = 200H; VCE = 390V, RG = 10; VGE = 15V.
Diode clamp used: 8ETH06 (See C.T.3)

10

15

20

25

IC (A)

Fig. 12 - Typ. Switching Time vs. IC

TJ = 125C; L = 200H; VCE = 390V, RG = 10; VGE = 15V.
Diode clamp used: 8ETH06 (See C.T.3)

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IRGB20B60PD1PbF
1000

250

td OFF

EON

Swiching Time (ns)

Energy (J)

200

EOFF

150

100

tdON

10

tF

100

tR
1

50
0

10

15

20

25

30

35

10

20

30

40

RG ( )

RG ( )

Fig. 13 - Typ. Energy Loss vs. RG

TJ = 125C; L = 200H; VCE = 390V, ICE = 13A; VGE = 15V
Diode clamp used: 8ETH06 (See C.T.3)

Fig. 14 - Typ. Switching Time vs. RG

TJ = 125C; L = 200H; VCE = 390V, ICE = 13A; VGE = 15V
Diode clamp used: 8ETH06 (See C.T.3)

12

10000

10
Cies
Capacitance (pF)

Eoes (J)

8
6
4

1000

Coes

100

Cres

10

100

200

300

400

500

600

700

60

80

100

Fig. 16- Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz

Fig. 15- Typ. Output Capacitance

Stored Energy vs. VCE
16

1.6
1.5

14
400V

Normalized V CE(on) (V)

12
10

VGE (V)

40

VCE (V)

VCE (V)

8
6
4
2

1.4
1.3
1.2
1.1
1
0.9
0.8
0.7

0.6

10

20

30

40

50

60

Q G , Total Gate Charge (nC)

70

80

Fig. 17 - Typical Gate Charge vs. VGE

ICE = 13A

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20

-50

50

100

150

200

T J , Junction Temperature (C)

Fig. 18 - Normalized Typical VCE(on) vs.

Junction Temperature
ICE = 13A; VGE = 15V

IRGB20B60PD1PbF
14

50

I F = 8.0A

45

12

VR = 200V
TJ = 125C
TJ = 25C

I F = 4.0A
10

I F = 4.0A
8

Irr- ( A)

trr- (nC)

40

I F = 8.0A

35

30
4

25

VR = 200V
TJ = 125C
TJ = 25C
20
100

di f /dt - (A/s)

0
100

1000

Fig. 19 - Typical Reverse Recovery vs. dif/dt

1000

di f /dt - (A/s)

Fig. 20 - Typical Recovery Current vs. dif/dt

1000

200
VR = 200V
TJ = 125C
TJ = 25C

VR = 200V
TJ = 125C
TJ = 25C

160

I F = 8.0A

I F = 4.0A

Qrr- (nC)

120

di (rec) M/dt- (A /s)

I F = 8.0A

80

I F = 4.0A

40

0
100

di f /dt - (A/s)

1000

Fig. 21 - Typical Stored Charge vs. dif/dt

100
100

A
1000

di f /dt - (A/s)

Fig. 22 - Typical di(rec)M/dt vs. dif/dt,

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IRGB20B60PD1PbF

Thermal Response ( Z thJC )

D = 0.50

0.1

0.20
0.10
J

0.05
0.02
0.01

R1
R1
J
1

R2
R2

R3
R3

R4
R4

Ci= i/Ri
Ci i/Ri

0.01

Ri (C/W)
C

i (sec)

0.0076

0.000001

0.2696

0.000270

0.1568

0.001386

0.1462

0.015586

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

Thermal Response ( Z thJC )

D = 0.50
1

0.20
0.10
0.05

0.1

0.01

0.02
0.01

R1
R1
J
1

SINGLE PULSE
( THERMAL RESPONSE )

R2
R2
C

Ci= i/Ri
Ci i/Ri

Ri (C/W) i (sec)
1.779
0.000226
3.223

0.001883

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

0.001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGB20B60PD1PbF
L

L
VCC

DUT

80 V

DUT
480V

Rg

1K

Fig.C.T.2 - RBSOA Circuit

Fig.C.T.1 - Gate Charge Circuit (turn-off)

R=

PFC diode

DUT /
DRIVER

VCC

DUT

Rg

VCC
ICM

VCC

Rg

Fig.C.T.4 - Resistive Load Circuit

Fig.C.T.3 - Switching Loss Circuit

REVERSE RECOVERY CIRCUIT

VR = 200V

0.01
L = 70H
D.U.T.
dif/dt
ADJUST

D
G

IRFP250
S

Fig. C.T.5 - Reverse Recovery Parameter

Test Circuit

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IRGB20B60PD1PbF
18

450

400

16

400

tf

300
90% ICE

350

12

300

10

200

8
5% V CE

150
100

5% ICE

50
0
-50
-0.20

Eoff Loss

0.00

0.20

0.40

25
90% test current

200

10% test current

150

100

50

35
30

tr

250

20
15
10

5% V CE
Eon Loss

-50
7.75

-2
0.80

0.60

40
TEST CURRENT

VCE (V)

VCE (V)

250

14

ICE (A)

350

45

I CE (A)

450

7.85

7.95

8.05

5
0
-5
8.15

Time (s)

Time(s)

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 125C using Fig. CT.3

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 125C using Fig. CT.3

trr

IF

tb

ta

Q rr
I RRM

0.5 I RRM
di(rec)M/dt

0.75 I RRM
1

di f /dt

1. dif/dt - Rate of change of current

through zero crossing
2. I RRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I F to point where a line passing
through 0.75 I RRM and 0.50 IRRM
extrapolated to zero current

4. Qrr - Area under curve defined by trr

and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M /dt - Peak rate of change of
current during tb portion of trr

Fig. WF3 - Reverse Recovery Waveform and

Definitions

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IRGB20B60PD1PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)
10.29 (.405)

2.87 (.113)
2.62 (.103)

-B-

3.78 (.149)
3.54 (.139)

4.69 (.185)
4.20 (.165)

-A-

1.32 (.052)
1.22 (.048)

6.47 (.255)
6.10 (.240)

4
15.24 (.600)
14.84 (.584)

LE A D A S S IG N M E N T S

1.15 (.045)
MIN
1

1234-

14.09 (.555)
13.47 (.530)

G A T2E- DRAIN
- SOURCE
D R A3IN
S O U4R- C
E
DRAIN
D R A IN

IG B T s , C oP A C K
1234-

G ATE
C O L LE C T O R
E M IT T E R
C O L LE C T O R

4.06 (.160)
3.55 (.140)

3X
3X

LEAD ASSIGNMENTS

H E X FE1T- GATE

1.40 (.055)
1.15 (.045)

0.93 (.037)
0.69 (.027)

0.36 (.014)

3X
M

A M

0.55 (.022)
0.46 (.018)

2.92 (.115)
2.64 (.104)

2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

2 CONTROLLING DIMENSION : INCH

4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

E X AM P L E :

T H IS IS AN IR F 1 0 1 0
L OT CO D E 1 7 8 9
AS S E M B L E D O N W W 1 9 , 1 9 9 7
IN T H E AS S E M B L Y L IN E "C "

N ote : "P " in a sse m b ly lin e

p o sitio n in d ica te s "L e a d -Fre e "

IN T E R N AT IO N AL
R E C T IF IE R
L O GO
AS S E M B L Y
L O T COD E

P AR T N U M B E R

D AT E C O D E
YE AR 7 = 1997
WE E K 19
L IN E C

TO-220AB package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/04

10

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/