IS61LV25616AL: 256K X 16 High Speed Asynchronous Cmos Static Ram With 3.3V Supply

IS61LV25616AL
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
High-speed access time: 10, 12 ns CMOS low power operation Low stand-by power: Less than 5 mA (typ.) CMOS stand-by TTL compatible interface levels Single 3.3V power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available Lead-free available
ISSI
FEBRUARY 2006
DESCRIPTION The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit

static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61LV25616AL is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16 MEMORY ARRAY
VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
COLUMN I/O
CE OE WE UB LB CONTROL CIRCUIT
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

Rev. E 02/14/06
IS61LV25616AL
ISSI
WE X H X H H H L L L CE H L L L L L L L L OE X H X L L L X X X LB X X H L H L L H L UB X X H H L L H L L I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN VDD Current ISB1, ISB2 ICC I CC
TRUTH TABLE
Mode Not Selected Output Disabled Read
Write
I CC
PIN CONFIGURATIONS 44-Pin TSOP (Type II) and SOJ
PIN DESCRIPTIONS
A0-A17 I/O0-I/O15 CE Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground
A0 A1 A2 A3 A4 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A5 A6 A7 A8 A9
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A17 A16 A15 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A14 A13 A12 A11 A10
OE WE LB UB NC VDD GND

Rev. E 02/14/06
IS61LV25616AL
ISSI
48-Pin mini BGA
1 2 3 4 5 6
PIN CONFIGURATIONS 44-Pin LQFP
1 2
CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7
44 43 42 41 40 39 38 37 36 35 34 33 1 32 2 31 3 30 4 29 5 TOP VIEW 28 6 27 7 26 8 25 9 24 10 23 11 12 13 14 15 16 17 18 19 20 21 22
WE A0 A1 A2 A3 A4 A5 A6 A7 A8 A9
A17 A16 A15 A14 A13 A12 A11 A10 OE UB LB
I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC
A B C D E F G H
LB I/O8 I/O9 GND VDD I/O14 I/O15 NC
OE UB I/O10 I/O11 I/O12 I/O13 NC A8
A0 A3 A5 A17 NC A14 A12 A9
A1 A4 A6 A7 A16 A15 A13 A10
A2 CE I/O1 I/O3 I/O4 I/O5 WE A11
N/C I/O0 I/O2 VDD GND I/O6 I/O7 NC
3 4 5 6 7
PIN DESCRIPTIONS
A0-A17 I/O0-I/O15 CE OE WE LB UB NC VDD GND Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground
8 9 10 11 12

Rev. E 02/14/06
IS61LV25616AL
ISSI
Value 0.5 to VDD+0.5 65 to +150 1.0 Unit V C W
ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter VTERM TSTG PT Terminal Voltage with Respect to GND Storage Temperature Power Dissipation
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
VDD Range Commercial Industrial Ambient Temperature 0C to +70C 40C to +85C 10ns 3.3V +10%, -5% 3.3V +10%, -5% 12ns 3.3V + 10% 3.3V + 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND VIN VDD GND VOUT VDD Outputs Disabled Com. Ind. Com. Ind. Test Conditions VDD = Min., IOH = 4.0 mA VDD = Min., IOL = 8.0 mA Min. 2.4 2.0 0.3 2 5 2 5 Max. 0.4 VDD + 0.3 0.8 2 5 2 5 Unit V V V V A A
Notes: 1. VIL (min.) = 2.0V for pulse width less than 10 ns.

Rev. E 02/14/06
IS61LV25616AL
ISSI
Test Conditions VDD = Max., Com. IOUT = 0 mA, f = fMAX Ind. VDD = Max., VIN = VIH or VIL CE VIH, f = fMAX. VDD = Max., VIN = VIH or VIL CE VIH, f = 0 Com. Ind. Com. Ind. -10 Min. Max. 100 110 50 55 20 25 15 20 -12 Min. Max. 90 100 45 50 20 25 15 20 Unit mA mA
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
1 2 3 4 5 6
Symbol Parameter ICC ISB VDD Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs)
ISB1
mA
ISB2
VDD = Max., Com. CE VDD 0.2V, Ind. VIN VDD 0.2V, or VIN 0.2V, f = 0
mA
Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. Shaded area product in development
CAPACITANCE
Symbol CIN COUT
(1)
Parameter Input Capacitance Input/Output Capacitance
Conditions VIN = 0V VOUT = 0V
Max. 6 8
Unit pF pF
7 8 9 10 11 12
Note: 1. Tested initially and after any design or process changes that may affect these parameters.

Rev. E 02/14/06
IS61LV25616AL
ISSI
-10 Min. Max. 10 2 0 0 3 0 0 0 10 10 4 4 4 4 3 10 -12 Min. Max. 12 2 0 0 3 0 0 0 12 12 5 5 6 5 4 12 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE Access Time OE Access Time OE to High-Z Output OE to Low-Z Output CE to High-Z Output CE to Low-Z Output LB, UB Access Time LB, UB to High-Z Output LB, UB to Low-Z Output Power Up Time Power Down Time
tRC tAA tOHA tACE tDOE tHZOE(2) tLZOE(2) tHZCE(2 tLZCE(2) tBA tHZB(2) tLZB(2) tPU tPD
Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage.
AC TEST LOADS
319 3.3V
319 3.3V
OUTPUT 30 pF Including jig and scope 353
OUTPUT 5 pF Including jig and scope 353
Figure 1
Figure 2
AC TEST CONDITIONS
Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load 6 Unit 0V to 3.0V 3 ns 1.5V See Figures 1 and 2

Rev. E 02/14/06
IS61LV25616AL
ISSI
AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL)
1 2
t OHA
DATA VALID
READ1.eps
t RC
ADDRESS
t AA t OHA
DOUT
PREVIOUS DATA VALID
3 4
READ CYCLE NO. 2(1,3)

tRC
ADDRESS
5 6
tAA tOHA tDOE tHZOE
OE
7 8
CE
tLZOE tACE tLZCE tHZCE
LB, UB
DOUT
HIGH-Z
tLZB
tBA
tRC
DATA VALID
tHZB
VDD Supply Current
tPU
50%
tPD
ICC
50%
9 10 11 12
ISB
UB_CEDR2.eps
Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transition.

Rev. E 02/14/06
IS61LV25616AL
ISSI
tRC
READ CYCLE NO. 2(1,3)
ADDRESS
tAA
OE
tOHA
tDOE
CE
tHZOE
tLZOE tACE tLZCE tHZCE
LB, UB
DOUT
HIGH-Z
tLZB
tBA
tRC
DATA VALID
tHZB
VDD
Supply Current
tPU
50%
tPD
ICC
50%
ISB
UB_CEDR2.eps
Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transition.
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)

Symbol Parameter Write Cycle Time CE to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time LB, UB Valid to End of Write WE Pulse Width WE Pulse Width (OE = LOW) Data Setup to Write End Data Hold from Write End WE LOW to High-Z Output WE HIGH to Low-Z Output -10 Min. Max. 10 8 8 0 0 8 8 10 6 0 2 5 -12 Min. Max. 12 8 8 0 0 8 8 12 6 0 2 6 Unit ns ns ns ns ns ns ns ns ns ns ns ns
tWC tSCE tAW tHA tSA tPWB tPWE1 tPWE2 tSD tHD tHZWE(2) tLZWE(2)
Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE LOW and UB or LB and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.

Rev. E 02/14/06
IS61LV25616AL
ISSI
AC WAVEFORMS WRITE CYCLE NO. 1 (CE Controlled, OE is HIGH or LOW) (1 )

t WC
ADDRESS
VALID ADDRESS
1
t HA
t SA
CE
t SCE
2 3
WE
t AW t PWE1 t PWE2 t PBW
UB, LB
t HZWE
DOUT
DATA UNDEFINED
HIGH-Z
t LZWE
4 5
UB_CEWR1.eps
t SD
DIN
t HD
DATAIN VALID
Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least one of the LB and UB inputs being in the LOW state. 2. WRITE = (CE) [ (LB) = (UB) ] (WE).
6 7
WRITE CYCLE NO. 2 (WE Controlled. OE is HIGH During Write Cycle) (1,2)
t WC
ADDRESS
VALID ADDRESS
8
t HA
OE
9 10
CE
LOW
t AW t PWE1
WE
t SA
UB, LB
t PBW
t HZWE
DOUT
DATA UNDEFINED
HIGH-Z
t LZWE
11
UB_CEWR2.eps
t SD
DIN
t HD
DATAIN VALID
12

Rev. E 02/14/06
IS61LV25616AL
ISSI
AC WAVEFORMS WRITE CYCLE NO. 3 (WE Controlled. OE is LOW During Write Cycle) (1)
t WC
ADDRESS
VALID ADDRESS
OE CE
LOW
t HA
LOW
t AW t PWE2
WE
t SA
UB, LB
t PBW
t HZWE
DOUT
DATA UNDEFINED
HIGH-Z
t LZWE
t SD
DIN
t HD
DATAIN VALID
UB_CEWR3.eps
WRITE CYCLE NO. 4 (LB, UB Controlled, Back-to-Back Write) (1,3)

t WC
ADDRESS
ADDRESS 1
t WC
ADDRESS 2
OE
t SA
CE
LOW
WE
t HA t SA t PBW t PBW
WORD 2
t HA
UB, LB
WORD 1
t HZWE
DOUT
HIGH-Z
t LZWE t HD
DATAIN VALID
DATA UNDEFINED
t SD
DIN
t SD
DATAIN VALID
t HD
UB_CEWR4.eps
Notes: 1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be in valid states to initiate a Write, but any can be deasserted to terminate the Write. The t SA, t HA, t SD, and t HD timing is referenced to the rising or falling edge of the signal that terminates the Write. 2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state. 3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.
10

Rev. E 02/14/06
IS61LV25616AL
ISSI
Test Condition See Data Retention Waveform VDD = 2.0V, CE VDD 0.2V See Data Retention Waveform See Data Retention Waveform
O
DATA RETENTION SWITCHING CHARACTERISTICS (LL)

Symbol Parameter VDD for Data Retention Data Retention Current Data Retention Setup Time Recovery Time Options Com. Ind. Min. 2.0 0 Typ.(1) 5 Max. 3.6 10 15 Unit V mA ns ns
1 2 3 4
VDR
IDR
tSDR tRDR
tRC
Note 1: Typical values are measured at VDD = 3.0V, TA = 25 C and not 100% tested.
DATA RETENTION WAVEFORM (CE Controlled)
tSDR VDD 1.65V
Data Retention Mode
tRDR
5 6
1.4V
VDR CE VDD - 0.2V
CE GND
7 8 9 10 11 12

Rev. E 02/14/06
11
IS61LV25616AL
ISSI
Package TSOP (Type II) TSOP (Type II), Lead-free 400-mil SOJ TSOP (Type II)
ORDERING INFORMATION Commercial Range: 0C to +70C

Speed (ns) 10 Order Part No. IS61LV25616AL-10T IS61LV25616AL-10TL IS61LV25616AL-10K IS61LV25616AL-12T
12
Industrial Range: 40C to +85C

Speed (ns) 10 Order Part No. IS61LV25616AL-10TI IS61LV25616AL-10TLI IS61LV25616AL-10KI IS61LV25616AL-10KLI IS61LV25616AL-10LQI IS61LV25616AL-10BI IS61LV25616AL-10BLI IS61LV25616AL-12TI Package TSOP (Type II) TSOP (Type II), Lead-free 400-mil SOJ 400-mil SOJ, Lead-free LQFP Mini BGA (8mm x 10mm) Mini BGA (8mm x 10mm), Lead-free TSOP (Type II)
12
12

Rev. E 02/14/06
PACKAGING INFORMATION
LQFP (Low Profile Quad Flat Pack) Package Code: LQ (44-pin)
D D1
ISSI
E1
b e SEATING PLANE
L1 L
A2 A A1
Low Profile Quad Flat Pack (LQ) Ref. Std. MS-026 No. Leads 44 Millimeters Inches Symbol Min Max Min Max A 1.60 0.063 A1 0.05 0.15 0.002 0.006 A2 1.35 1.45 0.053 0.057 b 0.30 0.45 0.012 0.018 C 0.09 0.20 0.004 0.008 D 12.00 BSC 0.472 BSC D1 10.00 BSC 0.394 BSC E 12.00 BSC 0.472 BSC E1 10.00 BSC 0.394 BSC e 0.80 BSC 0.031 BSC L 0.45 0.75 0.018 0.030 L1 1.00 REF. 0.039 REF. 0o 7o 0o 7o
Notes: 1. All dimensioning and tolerancing conforms to ANSI Y14.5M-1982. 2. Dimensions D1 and E1 do not include mold protrusions. Allowable protrusion is 0.25 mm per side. D1 and E1 include mold mismatch. 3. Controlling dimension: millimeters.

Rev. B 05/30/03
400-mil Plastic SOJ Package Code: K
ISSI
Notes: 1. Controlling dimension: millimeters. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Reference document: JEDEC MS-027.
N/2+1
E1
N/2
D A
SEATING PLANE
C A2
A1
E2
Symbol No. Leads A A1 A2 B b C D E E1 E2 e
Millimeters Inches Min Max Min Max (N) 28 3.25 3.75 0.128 0.148 0.64 0.025 2.08 0.082 0.38 0.51 0.015 0.020 0.66 0.81 0.026 0.032 0.18 0.33 0.007 0.013 18.29 18.54 0.720 0.730 11.05 11.30 0.435 0.445 10.03 10.29 0.395 0.405 9.40 BSC 0.370 BSC 1.27 BSC 0.050 BSC
Millimeters Min Max 32 3.25 3.75 0.64 2.08 0.38 0.51 0.66 0.81 0.18 0.33 20.82 21.08 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC
Inches Min Max 0.128 0.148 0.025 0.082 0.015 0.020 0.026 0.032 0.007 0.013 0.820 0.830 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC
Millimeters Min Max 36 3.25 3.75 0.64 2.08 0.38 0.51 0.66 0.81 0.18 0.33 23.37 23.62 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC
Inches Min Max 0.128 0.148 0.025 0.082 0.015 0.020 0.026 0.032 0.007 0.013 0.920 0.930 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC

Rev. F 10/29/03
ISSI
Millimeters Min Max 42 3.25 3.75 0.64 2.08 0.38 0.51 0.66 0.81 0.18 0.33 27.18 27.43 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC Inches Min Max 0.128 0.148 0.025 0.082 0.015 0.020 0.026 0.032 0.007 0.013 1.070 1.080 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Millimeters Min Max 44 3.25 3.75 0.64 2.08 0.38 0.51 0.66 0.81 0.18 0.33 28.45 28.70 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC 0.128 0.148 0.025 0.082 0.015 0.020 0.026 0.032 0.007 0.013 1.120 1.130 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Inches Min Max
Millimeters Inches Symbol Min Max Min Max No. Leads (N) 40 A 3.25 3.75 0.128 0.148 A1 0.64 0.025 A2 2.08 0.082 B 0.38 0.51 0.015 0.020 b 0.66 0.81 0.026 0.032 C 0.18 0.33 0.007 0.013 D 25.91 26.16 1.020 1.030 E 11.05 11.30 0.435 0.445 E1 10.03 10.29 0.395 0.405 E2 9.40 BSC 0.370 BSC e 1.27 BSC 0.050 BSC

Rev. F 10/29/03
Mini Ball Grid Array Package Code: B (48-pin)
Top View 1 2 3 4 5 6 6
ISSI
Bottom View
b (48x)
A B C D D E F G H D1
A B C D E F G H
e E E1
A2 SEATING PLANE A1
Notes: 1. Controlling dimensions are in millimeters.
mBGA - 6mm x 8mm

MILLIMETERS Sym.
N0. Leads A A1 A2 D D1 E E1 e b 0.24 0.60 7.90 5.90
mBGA - 8mm x 10mm

INCHES Min. Typ. Max. Sym.
N0. Leads
MILLIMETER Min. Typ. Max.

48 0.24 0.60 9.90 7.90 1.20 0.30 10.10 8.10
INCHES Min. Typ. Max.
Min. Typ. Max.

48 1.20 0.30 8.10 6.10
0.009 0.024 0.311 0.232
0.047 0.012 0.319 0.240
A A1 A2 D D1 E E1 e b
0.047 0.012 0.398 0.319
0.009 0.024 0.390 0.311
5.25 BSC 3.75 BSC 0.75 BSC 0.30 0.35 0.40
0.207 BSC 0.148 BSC 0.030 BSC 0.012 0.014 0.016
5.25 BSC 3.75 BSC 0.75 BSC 0.30 0.35 0.40
0.207 BSC 0.148 BSC 0.030 BSC 0.012 0.014 0.016

Rev. D 01/15/03
Plastic TSOP Package Code: T (Type II)
ISSI
Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane.
N/2+1
E1
1 D
N/2
SEATING PLANE
ZD
.
e b L A1 C
Symbol Ref. Std. No. Leads A A1 b C D E1 E e L ZD
Millimeters Min Max
Inches Min Max
Plastic TSOP (T - Type II) Millimeters Inches Min Max Min Max 44 1.20 0.047 0.05 0.15 0.002 0.006 0.30 0.45 0.012 0.018 0.12 0.21 0.005 0.008 18.31 18.52 0.721 0.729 10.03 10.29 0.395 0.405 11.56 11.96 0.455 0.471 0.80 BSC 0.032 BSC 0.41 0.60 0.016 0.024 0.81 REF 0.032 REF 0 5 0 5
Millimeters Min Max 50 1.20 0.05 0.15 0.30 0.45 0.12 0.21 20.82 21.08 10.03 10.29 11.56 11.96 0.80 BSC 0.40 0.60 0.88 REF 0 5
Inches Min Max
(N) 32 1.20 0.047 0.05 0.15 0.002 0.006 0.30 0.52 0.012 0.020 0.12 0.21 0.005 0.008 20.82 21.08 0.820 0.830 10.03 10.29 0.391 0.400 11.56 11.96 0.451 0.466 1.27 BSC 0.050 BSC 0.40 0.60 0.016 0.024 0.95 REF 0.037 REF 0 5 0 5
0.047 0.002 0.006 0.012 0.018 0.005 0.008 0.820 0.830 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 0.035 REF 0 5

Rev. F 06/18/03

IS61LV25616AL: 256K X 16 High Speed Asynchronous Cmos Static Ram With 3.3V Supply

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IS61LV25616AL: 256K X 16 High Speed Asynchronous Cmos Static Ram With 3.3V Supply

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IS61LV25616AL

DESCRIPTION The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit

FUNCTIONAL BLOCK DIAGRAM

256K x 16 MEMORY ARRAY

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

PIN CONFIGURATIONS 44-Pin TSOP (Type II) and SOJ

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

PIN CONFIGURATIONS 44-Pin LQFP

A17 A16 A15 A14 A13 A12 A11 A10 OE UB LB

LB I/O8 I/O9 GND VDD I/O14 I/O15 NC

OE UB I/O10 I/O11 I/O12 I/O13 NC A8

A0 A3 A5 A17 NC A14 A12 A9

A1 A4 A6 A7 A16 A15 A13 A10

A2 CE I/O1 I/O3 I/O4 I/O5 WE A11

N/C I/O0 I/O2 VDD GND I/O6 I/O7 NC

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

ABSOLUTE MAXIMUM RATINGS(1)

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Parameter Input Capacitance Input/Output Capacitance

Conditions VIN = 0V VOUT = 0V

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

OUTPUT 30 pF Including jig and scope 353

OUTPUT 5 pF Including jig and scope 353

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

READ CYCLE NO. 2(1,3)

tLZOE tACE tLZCE tHZCE

VDD Supply Current

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

READ CYCLE NO. 2(1,3)

tLZOE tACE tLZCE tHZCE

WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

AC WAVEFORMS WRITE CYCLE NO. 1 (CE Controlled, OE is HIGH or LOW) (1 )

t AW t PWE1 t PWE2 t PBW

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

WRITE CYCLE NO. 4 (LB, UB Controlled, Back-to-Back Write) (1,3)

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

DATA RETENTION SWITCHING CHARACTERISTICS (LL)

DATA RETENTION WAVEFORM (CE Controlled)

tSDR VDD 1.65V

Data Retention Mode

VDR CE VDD - 0.2V

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

ORDERING INFORMATION Commercial Range: 0C to +70C

Industrial Range: 40C to +85C

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

Symbol No. Leads A A1 A2 B b C D E E1 E2 e

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774

Notes: 1. Controlling dimensions are in millimeters.

mBGA - 6mm x 8mm

mBGA - 8mm x 10mm

MILLIMETER Min. Typ. Max.

INCHES Min. Typ. Max.

Min. Typ. Max.

0.009 0.024 0.311 0.232

0.047 0.012 0.319 0.240

0.047 0.012 0.398 0.319

0.009 0.024 0.390 0.311