Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 24 views

    IRFIBC40G Nte2379

    Uploaded by

    aalex28
    This document provides specifications for an N-channel enhancement mode MOSFET suitable for high-speed switching applications. It lists maximum ratings including voltage and current limits, as well as thermal and electrical characteristics such as breakdown voltage, threshold voltage, resistance, capacitance, switching times and more. The MOSFET is rated for fast switching, repetitive avalanche capability, ease of paralleling and simple drive requirements.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    IRFIBC40G Nte2379

    Uploaded by

    aalex28
    24 views3 pages
    This document provides specifications for an N-channel enhancement mode MOSFET suitable for high-speed switching applications. It lists maximum ratings including voltage and current limits, as well as thermal and electrical characteristics such as breakdown voltage, threshold voltage, resistance, capacitance, switching times and more. The MOSFET is rated for fast switching, repetitive avalanche capability, ease of paralleling and simple drive requirements.

    Original Title

    IRFIBC40G nte2379

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for an N-channel enhancement mode MOSFET suitable for high-speed switching applications. It lists maximum ratings including voltage and current limits, as well as thermal and electrical characteristics such as breakdown voltage, threshold voltage, resistance, capacitance, switching times and more. The MOSFET is rated for fast switching, repetitive avalanche capability, ease of paralleling and simple drive requirements.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    24 views3 pages

    IRFIBC40G Nte2379

    Uploaded by

    aalex28
    This document provides specifications for an N-channel enhancement mode MOSFET suitable for high-speed switching applications. It lists maximum ratings including voltage and current limits, as well as thermal and electrical characteristics such as breakdown voltage, threshold voltage, resistance, capacitance, switching times and more. The MOSFET is rated for fast switching, repetitive avalanche capability, ease of paralleling and simple drive requirements.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    NTE2379 MOSFET NChannel, Enhancement Mode High Speed Switch

    Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Drain Current, ID Continuous (VGS = 10V) TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V/ns Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C Maximum Lead Temperature (During Soldering, 1/16 from case, 10sec), TL . . . . . . . . . . . . +300C Thermal Resistance: Maximum JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Typical CasetoSink (Mounting surface flat, smooth, and greased), RthCS . . . . . . 0.5C/W Maximum JunctiontoAmbient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62C/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. VDD = 50V, starting TJ = +25C, l = 27mH, RG = 25, IAS = 6.2A. Note 3. ISD 6.2A, di/dt 80A/A, VDD V(BR)DSS, TJ +150C.

    Electrical Characteristics: (TJ = +25C unless otherwise specified)


    Parameter DrainSource Breakdown Voltage Gate Threshold Voltage GateSource Leakage Forward GateSource Leakage Reverse DrainSource Leakage Current Symbol BVDSS VGS(th) IGSS IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS IS ISM VSD trr Qrr ton Between lead, 6mm (.250 in) from package and center of die contact VGS = 10V, ID = 6.2A, VDS = 360V VDD = 300V, ID = 6.2A, RG = 9.1, RD = 47, Note 4 Test Conditions VGS = 0V, ID = 250A VDS = VGS, ID = 250A VGS = 20V VGS = 20V VDS = 600V, VGS = 0 VDS = 480V, VGS = 0, TC = +150C Static DrainSource ON Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Total Gate Charge GateSource Charge GateDrain (Miller) Charge Internal Drain Inductance Internal Source Inductance VGS = 10V, ID = 3.7A, Note 4 VDS 100V, ID = 3.7A, Note 4 VGS = 0V, VDS = 25V, f = 1MHz Min 600 2.0 4.7 Typ 1300 160 30 32 18 55 20 4.5 7.5 Max 4.0 100 100 100 500 1.2 60 8.3 30 Unit V V nA nA A A mhos pF pF pF ns ns ns ns nC nC nC nH nH

    SourceDrain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward TurnOn Time (Body Diode) (Body Diode) Note 1 TJ = +25C, IS = 6.2A, VGS = 0V, Note 4 TJ = +25C, IF = 6.2A, di/dt = 100A/s, Note 4 450 3.8 6.2 25 1.5 940 7.9 A A V ns C

    Intrinsic turnon time is neglegible (turnon is dominated by LS + LD)

    Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 300s, Duty Cycle 2%.

    .420 (10.67) Max .110 (2.79)

    .147 (3.75) Dia Max

    .500 (12.7) Max

    .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max

    Gate .100 (2.54)

    Source Drain/Tab

    You might also like