Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

DESCRIPTION
Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package.

BUK215-50Y

QUICK REFERENCE DATA

SYMBOL IL SYMBOL PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25C MIN. 9 MAX. 50 20 150 38 UNIT A UNIT V A C m

APPLICATIONS
General controller for driving lamps, motors, solenoids, heaters. VBG IL Tj RON

FEATURES
Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection Overvoltage and undervoltage shutdown with hysteresis On-state open circuit load detection Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection

FUNCTIONAL BLOCK DIAGRAM

BATT STATUS POWER MOSFET CONTROL & PROTECTION CIRCUITS LOAD GROUND RG

INPUT

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT426
PIN 1 2 3 4 5 mb DESCRIPTION Ground Input (connected to mb) Status Load Battery

PIN CONFIGURATION
mb

SYMBOL

I S
3 1 2 4 5

TOPFET HSS
G

Fig. 2.

Fig. 3.

May 2001

Rev 1.010

Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VBG IL PD Tstg Tj Tsold PARAMETER Continuous supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature1 Mounting base temperature Reverse battery voltages2 -VBG -VBG Continuous reverse voltage Peak reverse voltage Application information RI, RS External resistors3 Input and status II, IS II, IS Continuous currents Repetitive peak currents Inductive load clamping EBL Non-repetitive clamping energy 0.1, tp = 300 s IL = 10 A, VBG = 16 V Tj 150C prior to turn-off -5 -50 to limit input, status currents 3.2 during soldering Tmb 95C Tmb 25C CONDITIONS MIN. 0 -55 -

BUK215-50Y

MAX. 50 20 67 175 150 260

UNIT V A W C C C

16 32

V V

5 50

mA mA

150

mJ

ESD LIMITING VALUE

SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k MIN. MAX. 2 UNIT kV

THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance4 Rth j-mb Junction to mounting base 1.52 1.86 K/W CONDITIONS MIN. TYP. MAX. UNIT

1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj rating must be observed. 3 To limit currents during reverse battery and transient overvoltages (positive or negative). 4 Of the output power MOS transistor.

May 2001

Rev 1.010

Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

STATIC CHARACTERISTICS
Limits are at -40C Tmb 150C and typicals at Tmb = 25 C unless otherwise stated. SYMBOL VBG VBL -VLG -VLG PARAMETER Clamping voltages Battery to ground Battery to load Negative load to ground Negative load voltage1 Supply voltage VBG Operating range
2

BUK215-50Y

CONDITIONS IG = 1 mA IL = IG = 1 mA IL = 10 mA IL = 10 A; tp = 300 s battery to ground

MIN. 50 50 18 20

TYP. 55 55 23 25

MAX. 65 65 28 30

UNIT V V V V

5.5 9 V VBG 16 V VLG = 0 V Tmb = 25C

4

35

V A A A A mA A

IB IL IG IL

Currents Quiescent current3 Off-state load current Operating current

5 6

0.1 0.1 2 -

20 2 20 1 4 -

VBL = VBG Tmb = 25C IL = 0 A VBL = 0.5 V VBG 9 to 35 V 6V IL 10 A 10 A Tmb = 85C tp7 300 s 300 s Tmb 25C 150C 25C 150C

Nominal load current Resistances

RON RON

On-state resistance On-state resistance

95

28 36 150

38 70 48 88 190

m m m m

RG

Internal ground resistance

IG = 10 mA

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. 2 On-state resistance is increased if the supply voltage is less than 9 V. 3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load. 4 The measured current is in the load pin only. 5 This is the continuous current drawn from the supply with no load connected, but with the input high. 6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP. 7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

May 2001

Rev 1.010

Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

INPUT CHARACTERISTICS

BUK215-50Y

9 V VBG 16 V. Limits are at -40C Tmb 150C and typicals at Tmb = 25 C unless otherwise stated. SYMBOL II VIG VIG(ON) VIG(OFF) VIG II(ON) II(OFF) PARAMETER Input current Input clamping voltage Input turn-on threshold voltage Input turn-off threshold voltage Input turn-on hysteresis Input turn-on current Input turn-off current VIG = 3 V VIG = 1.5 V CONDITIONS VIG = 5 V II = 200 A MIN. 20 5.5 1.5 10 TYP. 90 7 2.4 2.1 0.3 MAX. 160 8.5 3 100 UNIT A V V V V A A

STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. Limits are at -40C Tmb 150C and typicals at Tmb = 25 C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL VSG VSG PARAMETER Status clamping voltage Status low voltage CONDITIONS IS = 100 A IS = 100 A Tmb = 25C IS IS Status leakage current Status saturation current1 Application information RS External pull-up resistor 47 k VSG = 5 V Tmb = 25C VSG = 5 V MIN. 5.5 2 TYP. 7 0.7 0.1 7 MAX. 8.5 1 0.8 15 1 12 UNIT V V V A A mA

OPEN CIRCUIT DETECTION CHARACTERISTICS

An open circuit load can be detected in the on-state. Refer to TRUTH TABLE. Limits are at -40C Tmb 150C and typical is at Tmb = 25 C. SYMBOL PARAMETER Open circuit detection IL(TO) IL(TO) Low current detect threshold Tj = 25C Hysteresis CONDITIONS 9 V VBG 35 V 0.24 0.4 0.8 0.16 1.6 1.2 A A A MIN. TYP. MAX. UNIT

1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to prevent possible interference with normal operation of the device.

May 2001

Rev 1.010

Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40C Tmb 150C and typicals at Tmb = 25 C. Refer to TRUTH TABLE. SYMBOL PARAMETER Undervoltage VBG(UV) VBG(UV) Low supply threshold voltage1 Hysteresis Overvoltage VBG(OV) VBG(OV) High supply threshold voltage2 Hysteresis 40 45 1 2 CONDITIONS MIN.

BUK215-50Y

TYP.

MAX.

UNIT

4.2 0.5

5.5 -

V V

50 -

V V

TRUTH TABLE
ABNORMAL CONDITIONS DETECTED INPUT L H H H H H H SUPPLY UV X 0 0 1 0 0 0 OV X 0 0 0 1 0 0 LC X 0 1 X X 0 0 LOAD SC X 0 0 X 0 1 0 OT X 0 0 X 0 X 1 OFF ON ON OFF OFF OFF OFF H H L H H L L off on & normal on & low current detect supply undervoltage lockout supply overvoltage shutdown SC tripped OT shutdown3 LOAD OUTPUT STATUS DESCRIPTION

KEY TO ABBREVIATIONS
L H X 0 1 logic low logic high dont care condition not present condition present UV OV LC SC OT undervoltage overvoltage low current or open circuit load short circuit overtemperature

1 Undervoltage sensor causes the device to switch off and reset. 2 Overvoltage sensor causes the device to switch off to protect its load. 3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD PROTECTION CHARACTERISTICS.

May 2001

Rev 1.010

Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

OVERLOAD PROTECTION CHARACTERISTICS

BUK215-50Y

5.5 V VBG 35 V, limits are at -40C Tmb 150C and typicals at Tmb = 25 C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL IL(lim) PARAMETER Overload protection Load current limiting Short circuit load protection Battery load threshold voltage1 Response time2 Overtemperature protection Tj(TO) Tj(TO) Threshold junction temperature3 Hysteresis 150 170 190 C VBL > VBL(TO) CONDITIONS VBL = VBG VBG 9 V VBG = 16 V VBG = 35 V td sc MIN. 34 TYP. 45 MAX. 64 UNIT A

VBL(TO)

8 15 -

10 20 180

12 25 250

V V s

10

SWITCHING CHARACTERISTICS
Tmb = 25 C, VBG = 13 V, for resistive load RL = 13 . SYMBOL td on dV/dton t on PARAMETER During turn-on Delay time Rate of rise of load voltage Total switching time During turn-off Delay time Rate of fall of load voltage Total switching time CONDITIONS from input going high to 10% VL 30% to 70% VL to 90% VL from input going low to 90% VL 70% to 30% VL to 10% VL 40 0.35 140 60 1 200 s V/s s s V/s s MIN. TYP. MAX. UNIT

td off dV/dtoff t off

55 0.6 85

80 1 120

CAPACITANCES
Tmb = 25 C; f = 1 MHz; VIG = 0 V. designed in parameters. SYMBOL Cig Cbl Csg PARAMETER Input capacitance Output capacitance Status capacitance CONDITIONS VBG = 13 V VBL = 13 V VSG = 5 V MIN. TYP. 15 250 11 MAX. 20 350 15 UNIT pF pF pF

1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. 2 Measured from when the input goes high. 3 After cooling below the reset temperature the switch will resume normal operation.

May 2001

Rev 1.010

Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

BUK215-50Y

5
VBL IB II I VBG VSG RS IG IS S VIG B TOPFET HSS G IL L VLG

IBG(ON) / mA

BUK215-50Y CLAMPING OVERVOLTAGE SHUTDOWN

4 3 2 1

UNDERVOLTAGE SHUTDOWN

OPERATING V IG = 5 V
LOAD

QUIESCENT VIG = 0 V 0 0 10 20 30 40 VBG / V 50 60 70

Fig.4. High side switch measurements schematic. (current and voltage conventions)

Fig.7. Typical supply characteristics, 25 C. IG = f(VBG); parameter VIG

80

RON / mOhm

BUK215-50Y

40 38

RON / mOhm

BUK215-50Y

typ .
60

36 34

RON max

VBG = 6 V
40

32 30

9 V =< VBG =< 35 V

20

28 26 24 22

0 -50 0 50

20

Tj / C

100

150

200

10

100

VBG / V

Fig.5. Typical on-state resistance, tp = 300 s. RON = f(Tj); parameter VBG; condition IL = 10 A

Fig.8. Typical on-state resistance,Tj = 25 C. RON = f(VBG); condition IL = 10 A; tp = 300 s

50

IL / A VBG / V

BUK215-50Y
3.0

IG / mA lL = 0 A

BUK215-50Y

>=8 7 6 5
2.5 2.0 1.5

40

30

lL > IL(TO) l >I

L

9 V <= VBG <= 35 V typ.

L(TO)

20

1.0
10

0.5 0
0

VBG = 50 V

VBL / V

-50

50

Tj / C

100

150

200

Fig.6. Typical on-state characteristics, Tj = 25 C. IL = f(Tj); parameter VBG; tp = 250 s

Fig.9. Typical operating supply current. IG = f(Tj); parameters IL, VBG; condition VIG = 5 V

May 2001

Rev 1.010

Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

BUK215-50Y

100E-6 10E-6 1E-6 100E-9 10E-9

IB / A

BUK215-50Y
1.6

IL(OC) / A

BUK215-50Y

max. typ.
1.2

0.8

max. typ.

0.4

1E-9 100E-12 -50 0 50

0.0

min.

Tj / C

100

150

200

-50

50

Tj / C

100

150

200

Fig.10. Typical supply quiescent current. IB = f(Tj); condition VBG = 16 V, VIG = 0 V, VLG = 0 V

Fig.13. Low load current detection threshold. IL(OC) = f(Tj); conditions VIG = 5 V; VBG 9 V

100E-6 10E-6 1E-6 100E-9 10E-9

IL / A

BUK215-50Y max. typ.

5.5

VBG(UV) / V

BUK215-50Y

4.5 typ.

3.5
1E-9 00E-12 10E-12 -50 0 50

on off

2.5

Tj / C

100

150

200

-50

50

Tj / C

100

150

200

Fig.11. Typical off-state leakage current. IL = f(Tj); conditions VBL = 16 V = VBG, VIG = 0 V.

Fig.14. Supply undervoltage thresholds. VBG(UV) = f(Tj); conditions VIG = 5 V; VBL 2 V

100E-6

IS / A

BUK215-50Y max.

55

VBG(OV) / V

BUK215-50Y

10E-6

50

max. on

1E-6

typ.
45

100E-9

off
40

min.

10E-9

1E-9 -50 0 50

35

Tj / C

100

150

200

-50

50

Tj / C

100

150

200

Fig.12. Status leakage current. IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V

Fig.15. Supply overvoltage thresholds. VBG(OV) = f(Tj); conditions VIG = 5 V; IL = 100 mA

May 2001

Rev 1.010

Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

BUK215-50Y

VSG(LOW) / V

BUK215-50Y

IS / mA

BUK215-50Y

0.5

0
-50 0 50

Tj / C

100

150

200

VSG / V

Fig.16. Typical status low characteristic. VSG = f(Tj); conditions VBG 9 V, IS = 100 A

Fig.19. Typical status low characteristic, Tj = 25 C. IS = f(VSG); conditions VIG = 5V, VBG = 13V,IL = 0A

3.00

VIG / V

BUK215-50Y

7.50 7.40 7.30

VSG / V VIG / V =

BUK215-50Y 5

2.50

7.20 7.10

2.00

VIG(ON) VIG(OFF)

7.00 6.90 6.80 6.70 6.60

1.50

1.00 -50 0 50

6.50

Tj / C

100

150

200

-50

50

O Tj / C 100

150

200

Fig.17. Typical threshold voltage characteristic. VIG = f(Tj); condition 9V VBG 16V

Fig.20. Typical status clamping voltage. VSG = f(Tj); condition IS = 100A, VBG = 13V

7.50 7.40 7.30 7.20 7.10 7.00 6.90 6.80 6.70 6.60 6.50

VIG / V

BUK215-50Y

20

IS / mA

BUK215-50Y

15

10

0
-50 0 50

Tj / C

100

150

200

10

VSG / V

Fig.18. Typical input clamping voltage. VIG = f(Tj); condition II = 200A, VBG = 13V

Fig.21. Typical status characteristic, Tj = 25 C. IS = f(VSG); conditions VIG = VBG = 0V

May 2001

Rev 1.010

Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

BUK215-50Y

65

VBG / V
IG =

BUK215-50Y 200 mA

-10

VLG / V

BUK215-50Y

-15
60

1 mA

IL =
-20
55

10 mA 10 A

-25

50 -50 0 50

-30

Tj / C

100

150

200

-50

50

Tj / C

100

150

200

Fig.22. Typical battery to ground clamping voltage. VBG = f(Tj); parameter IG

Fig.25. Typical negative load clamping voltage. VLG = f(Tj); parameter IL; condition VIG = = 0V

65

VBL / V

BUK215-50Y
0 -5 -10

IL / A

BUK215-50Y

60

IL = 600 mA 1 mA

-15 -20 -25 -30 -35 -40 -45

55

50 -50 0 50

Tj / C

100

150

200

-50 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1

0.0

VBL / V

Fig.23. Typical battery to load clamping voltage. VBL = f(Tj); parameter IL; condition IG = 10mA

Fig.26. Typical reverse diode characteristic. IL = f(VBL); conditions VIG = 0 V, Tj = 25 C

10

IL / A

BUK215-50Y

50 45 40 35 30

IL / A current limiting

BUK215-50Y

VBL(TO) typ. Short circuit trip = 150us

25 20 15 10 5

0 -30 -25 -20 -15 -10

VLG / V

VBL / V

10

12

14

16

18

20

Fig.24. Typical negative load clamping. IL = f(VLG); conditions VIG = = 0V, Tj = 25C

Fig.27. Typical overload characteristic, Tmb = 25 C. IL = f(VBL); condition VBG = 16 V; parameter tp

May 2001

10

Rev 1.010

Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

BUK215-50Y

35 30 25 20

VBL(TO) / V

BUK215-50Y max.

IL(lim) / A
50

BUK215-50Y

typ. 25C min.

45

15 10

40

35

5 0 0 10 20
30 -50 0 50
O Tj / C 100

VBG / V

30

40

50

150

200

Fig.28. Short circuit load threshold voltage. VBL(TO) = f(VBG); conditions -40C Tmb 150C

Fig.31. Typical overload current, VBL = 8V. IL = f(Tj); parameter VBG = 13V;tp = 300 s

10 nF

CBL

BUK215-50Y

12.0 11.8 11.6 11.4 11.2

VBL(TO) / V

BUK215-50Y

1nF

11.0 10.8 10.6 10.4 10.2 10.0

0 10 20

100pF

VBL / V

30

40

50

-50

50

Tj / C

100

150

200

Fig.29. Typical output capacitance. Tmb = 25 C Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V

Fig.32. Typical short circuit load threshold voltage. VBL(TO) = f(Tj); condition VBG = 16 V
Zth j-mb ( K / W ) BUK215-50Y

IG / mA

BUK215-50Y

1e+01

D=
-50

1e+00

0.5 0.2 0.1 0.05 0.02

-100

1e-01

-150

1e-02

P D

tp

D=

tp T t

-200 -20 -15 -10 -5 0

1e-03 1e-07

1e-05

1e-03

1e-01

VBG / V

t/s

1e+02

Fig.30. Typical reverse battery characteristic. IG = f(VBG); conditions IL = 0 A, Tj = 25 C

Fig.33. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T

May 2001

11

Rev 1.010

Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped)

BUK215-50Y

SOT426

A E A1

D1 mounting base

HD

3 1
Lp

5
b

c Q

2.5 scale

5 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.70 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20

OUTLINE VERSION SOT426

REFERENCES IEC JEDEC EIAJ

EUROPEAN PROJECTION

ISSUE DATE 98-12-14 99-06-25

Fig.34. SOT426 surface mounting package1, centre pin connected to mounting base.

1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g. For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.

May 2001

12

Rev 1.010

Philips Semiconductors

Product specification

TOPFET high side switch SMD version of BUK210-50Y

BUK215-50Y

DEFINITIONS
DATA SHEET STATUS DATA SHEET STATUS1 Objective data PRODUCT STATUS2 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A

Preliminary data

Qualification

Product data

Production

Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

May 2001

13

Rev 1.010