Evaluation Of Microstructural Paramaters Of The Synthesised Γ-Teo2 Nanocrystals Using Xrd Principles
Evaluation Of Microstructural Paramaters Of The Synthesised Γ-Teo2 Nanocrystals Using Xrd Principles
Evaluation Of Microstructural Paramaters Of The Synthesised Γ-Teo2 Nanocrystals Using Xrd Principles
Evaluation Of Microstructural Paramaters Of The Synthesised Teo2 Nanocrystals Using Xrd Principles
A.Sinthiya
Depart ment of Physics, St. Josephs College(Autonomous), Trichy -620 002, Tamil Nadu, Ind ia .
----------------------------------------------------------Abstract----------------------------------------------------------------The synthesised -TeO2 nanocrystalshave been indexed in orthorhombic system with lattice energy 81.21 eV. Strain is caused by the presence of dislocations. This has possibility to have dislocations in nanoscale has little significance. The X-ray peak profile study provides peak broadening and asymmet ric peak shapes and to understand the micro structural parameters for crystallite size and strain. Present work deals with systematic application of Hall-Williamson method for crystallite size estimation, and the modified Williamson -Hall p lot and the modified Warren-Averbach methods yielded physically well justified data for particle size and dislocation densities. The reflections {020}{151} and {002} have the same peak breadth and reflections while {120}{101}{200} and {122} have more or less same peak breadth. The successful application of the new procedures have indicated that even in nanocrystalline particles dislocations are present.
Keyword: Lattice energy, M icro structural parameters, Crystal size and strain, Nanocrystalline Date of Submission: 07, November, 2012 I. Introduction
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The microstructure of nanomaterials and its relation to macroscopic properties is essential for the development and application of nanomaterials. The structure of TeO 2 -based glasses, are promising materials for use in optical fibre o r in non-linear optical devices [1]. X-ray diffract ion is a pro mising tool for structural analysis of solid or amo rphous materials and approaches such as use of Sherrer equation, integral breadth analysis, single-line approximat ion, Hall-Williamson method, etc., have been developed for estimation of crystallite size. Nu merous experiments have shown that the strain broadening caused by dislocations can be well described by a special logarith mic series expansion of the Fourier coefficients of Bragg reflect ion peak profiles. X-ray diffraction peak pro file analysis is used for the characterization of microstructure either in the bulk or in loose powder materials, which is a nondestructive method yielding a series of interesting microstructural parameters[4].Present work deals with systematic application of Hall-Williamson method for the estimation of crystallite size and the strain [2] of the synthesised -TeO2 nanocrystals. Also incorporation of the classical methods of Williamson Hall and Warren Averbach and the modified Williamson Hall a nd modified Warren Averbach methods, for the analysis of particle size and dislocation densities as suggested by Ungar[3] have been attempted for -TeO2 .
II.
Experimental
Grey color Telluriu m metal was mixed in lime water (10ml) and 16 drops of nitric acid was added to it, and after a day, yellow co lor mineral telluriu m d io xide was obtained at room temperature. After 20 days grown crystals were filtered and dried at roo m temperature. Lime water helps to spread the ions evenly. III. Results And Discussion 2.1 Powder XRD pattern The powder sample subjected to X-ray diffracto meter within 2 range of 20-60 at a scan speed of 7 per minute using a Cu target and Cu-K radiation of 0.15406 nm wavelength at a powder rating of 40kV, 40mA using Brukker D8 diffracto meter. The XRD pattern (Fig. 1a) has been indexed in Table 1 falls in the orthorhombic system whose unit cell parameters are tabulated in Table 2.
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<
>=
ln {
--- (2)
where the b is the length of burger vector, the dislocation density, R e the outer cut-off radius and C is the contrast factor of the dislocations.The contrast factor depends on the relative orientation of line -burgers- and diffraction vector as well as the elastic constants of the material. Because of the actual dislocation distribution in a sample, it is necessary to average over the screw dislocations, different slip systems and orientation of the slip system with respect to the diffraction vector, denoting the average contrast factor by C. Ungar and Tichy [10], showed that for cubic or hexagonal crystals, if the burgers vector distribution is completely random, the dependence of C on the hkl can be exp licit ly calculated.The intensity of the profile is given by the convolution of size and strain broadening. Thus in Fourier space, it is possible to separate the contributions via the well knownWarren-Averbachequation . ln A L = ln + ln --- (3)
Here A L are the Fourier coefficient computed fro m the profile, and are the coefficients associated with size broadening and strain broadening respectively. The strain broadening coefficients are computed using the relation = exp (-2 2 L2 g 2 < >) --- (4) > is the mean square strain. It depends on the
where L is the Fourier length, g is the diffraction vector and < diffraction order and vanishes for g 2 =0.
Inserting Eq.(4 & 5) in Eq.(3) g ives the modified WarrenAverbach equation [11].
ln A L = ln + L2 b 2 C ln ( ) --- (5) If the strain is caused by dislocations, then the modified Warren -Averbach analysis suggest that ln AL must be plotted against g 2 C instead of g 2 . The successful application of this scheme to TeO2 result a smooth curve is shown in Fig 2.
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where A and A' are the parameters determined by the effective outer cutoff radius of dislocations, b the burger vector of dislocations, C the contrast factor, the dislocation density and Q correlation factor. Eq. (9) shows that if dislocations are the source of strain in a crystal the proper scaling factor of the breadths (or FWHM) of the peak profiles is (KC) instead of merely K. The FWHM according to conventional Williamson- Hall p lot is shown in Fig 5. The unsymmetric FWHM fo llo w an apparently unsystematic behaviour as a funct ion of diffraction vector K (or g). Plotting the same data of FWHM according to the modified Williamson -Hall p lot , a smooth curve is obtained as expected from Eq.(2) and it is shown in Fig.6The average contrast factors corresponding to the most common type of edge and screw dislocations in f.c.c and b.c.c crystals were evaluated as a function of the elastic constants of crystals in a wide range of the elastic anisotropy, A i [ where A i = 2C44 /(C11 C12 ) and Cij are the elastic constants] in the range of 7.2405. C or q = a{1-exp (-A i /b)} + c A i + d --- (10) where the parameters a,b,c and d are fitted to the calculation. The C factors were averaged by assuming that all slip systems permitted in given crystal are equally populated , and that edge and the screw dislocations are present with equal probability. The contrast factors were calculated using the following elastic constants for TeO2 C11 = 29.6 GPa, C12 = 21.7 GPa and C44 = 28.6 [13].The average C factor used in the present evaluation is listed in Table 3. The insertion at K = 0 of the curve in Fig. 6 fitted by the standard least square method provides a particle size to be D =12.6275 n m. 2.6 Scatter matri x To account the grain size of the sample the study on the peak profile is important. The peak profiles of the observed reflections of the specimen, in the form of scatter matrix are shown in Figure 7. It is the topographical view to study the relation between the intensities and their corresponding K. It is observed that
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IV.
Conclusions
Though every method has its advantages and disadvantages, yet they are independent to determine set of quantities/parameters. It is always useful to make use of all possibilities of evaluation thereby enhancing the accuracy of the results as well as identifying better procedure. The system has been indexed analytically with reference to[13], in orthorhombic system yields lattice energy as 81.21 eV. For the plane {020} the density of atom is high compared to other planes with the least in{151}. Strain is caused by the presence of dislocations. This has possibility to have dislocations in nanoscale has little significance.The perfect applicability of modified Williamson-Hall plot indicates that in the nanocrystalline -TeO2 , strain is caused by the presence of dislocations. This has to be considered as a clear answer to the question raised in the debate about the possibility to have dislocations in nanoscale.Fro m the conventional Williamson Hall plot the calculated = 0.58065 fro m the slope is very close to the both theoretical value and the cf.[13]. Thus in the sequence of length scales, it is established that grain size is less than crystallite size. The crystallite size is certainly the smallest length scale in microstructure, which is not directly related to dislocation densities or distances between dislocation. Table 4 summarises the calculated grain size and crystallite size of -TeO2 .Fro m the conventional Williamson Hall p lot, the reflections {020}{151} and {002} have the same peak breadth and the reflec tions while {120}{101}{200} and {122} have more or less same peak breadth. The peak profile has peak broadening and asymmetric peak shapes and this value provides the micro structural parameters for crystallite size and strain.Fro m the modified Warren-Averbach analysis, including the contrast factor we got the smooth curve and thus it conforms that the strain is caused by dislocations.
V.
Acknowledgements
We are thankful to Sastra university, Tanjore, Tamil Nadu, India for the Powder XRD data collection , and to our Institution for providing the opportunity to carry out the work. List of symbols Gamma -TeO2 Meta stable form of Telluriu m Dio xide eV Electron volt ml milli liter XRD X-ray diffraction Cu Copper target K Radiat ion line due to energetic K-electrons nm Nano meter kV Kilo volt mAM illi A mpere Teta d Inter planar distance Angstrom Un it I Intensity Imax Maximu m intensity Density of atoms in one plane g/cm1 Grams per centimeter inverse Density of the unit cell
N Nu mber of ato ms in unit cell hkl miller indices ln Lograthemic expansion eq. Equation FWHM Full width half maximu m f.c.c Face centered cubic crystals b.c.c Base centered cubic crystals GPa Giga Pascal Eta
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