BFP760

Low Noise Silicon Germanium Bipolar RF Transistor

Data Sheet
Revision 1.0, 2012-12-04

RF & Protection Devices

Edition 2012-12-04 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

BFP760

BFP760, Low Noise Silicon Germanium Bipolar RF Transistor Revision History: 2012-12-04, Revision 1.0 Page Subjects (major changes since last revision)

Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, IRF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE; PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinQ!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, Vision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. muRata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2011-11-11

Data Sheet

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BFP760

Table of Contents

Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 2 3 4 5 5.1 5.2 5.3 5.4 5.5 6 7 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 11 12 15 18

Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Data Sheet

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List of Figures

List of Figures
Figure 4-1 Figure 5-1 Figure 5-2 Figure 5-3 Figure 5-4 Figure 5-5 Figure 5-6 Figure 5-7 Figure 5-8 Figure 5-9 Figure 5-10 Figure 5-11 Figure 5-12 Figure 5-13 Figure 5-14 Figure 5-15 Figure 5-16 Figure 5-17 Figure 5-18 Figure 5-19 Figure 5-20 Figure 7-1 Figure 7-2 Figure 7-3 Figure 7-4 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP760 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in A. . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V. . . . . . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 , VCE, f = Parameters . . . . . . . . . . . . . . . . . 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 , f = 5.5 GHz . . . . . . . Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 , f = 5.5 GHz . . . . . . . . . . Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Gma, Gms, IS21I = f (f), VCE = 3 V, IC = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Reflection Coefficient S11 = f (f), VCE = 3 V, IC = 10 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 10 / 30 mA . . . . . . . . . . Output Reflection Coefficient S22 = f (f), VCE = 3 V, IC = 10 / 30 mA. . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f), VCE = 3 V, IC = 10 / 30 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 , f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Example (Marking BFP760: R6s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 15 15 16 16 17 18 18 19 19 20 20 21 21 22 22 23 23 24 24 26 26 26 26

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List of Tables

List of Tables
Table 3-1 Table 4-1 Table 5-1 Table 5-2 Table 5-3 Table 5-4 Table 5-5 Table 5-6 Table 5-7 Maximum Ratings at TA = 25 C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DC Characteristics at TA = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 General AC Characteristics at TA = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 3 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 1.8 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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Product Brief

Product Brief

The BFP760 is a linear low noise wideband NPN bipolar RF transistor. The device is based on Infineons reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 70 mA. With its high linearity at currents as low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 9 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.

Data Sheet

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Features

Features

Very low noise amplifier based on Infineons reliable, high volume SiGe:C technology High linearity OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA High transition frequency fT = 45 GHz @ 1 GHz, 3 V, 35mA NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 3 V, 10 mA Low power consumption, ideal for mobile applications Easy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leads Qualification report according to AEC-Q101 available

3 4 1

Applications As Low Noise Amplifier (LNA) in Mobile and fixed connectivity applications: WLAN 802.11a/b/c/g/n, WiMAX 2.5/3.5 GHz, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM Radio UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications

As discrete active mixer, buffer amplifier in VCOs

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Product Name BFP760

Package SOT343 1=B

Pin Configuration 2=E 3=C 4=E

Marking R6s

Data Sheet

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Maximum Ratings

Maximum Ratings

Table 3-1 Parameter

Maximum Ratings at TA = 25 C (unless otherwise specified) Symbol Min. Values Max. V 4.0 3.5 13 13 1.2 70 4 240 150 150 V V V mA mA mW C C Open base Unit Note / Test Condition

Collector emitter voltage

VCEO

TA = 25 C TA = -55 C
E-B short circuited Open emitter Open collector

Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature
1)

VCES VCBO VEBO IC IB Ptot TJ TStg

-55

TS 95 C

1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.

Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.

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Thermal Characteristics

Thermal Characteristics

Table 4-1 Parameter

Thermal Resistance Symbol Min.

1)

Values Typ. Max.

Unit

Note / Test Condition

Junction - soldering point RthJS 230 K/W 1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance calculation)

280 240 200 Ptot [mW] 160 120 80 40 0

25

50

75 T [C]
S

100

125

150

Figure 4-1 Total Power Dissipation Ptot = f (Ts)

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Electrical Characteristics

Electrical Characteristics

5.1

DC Characteristics

Table 5-1 Parameter

DC Characteristics at TA = 25 C Symbol Min. Values Typ. 4.7 10 1 1 1 250 Max. 400 40 40 40 400 V nA 4 Unit Note / Test Condition

Collector emitter breakdown voltage Collector emitter leakage current

V(BR)CEO ICES

IC = 1 mA, IB = 0
Open base

VCE = 13 V, VBE = 0 VCE = 5 V, VBE = 0

E-B short circuited

Collector base leakage current Emitter base leakage current DC current gain

ICBO IEBO hFE

160

nA nA

VCB = 5V, IE = 0
Open emitter

VEB = 0.5V, IC = 0 Open collector VCE = 3 V, IC = 35 mA

Pulse measured

5.2

General AC Characteristics

Table 5-2 Parameter

General AC Characteristics at TA = 25 C Symbol Min. Values Typ. 45 0.13 Max. 0.2 GHz pF Unit Note / Test Condition

Transition frequency Collector base capacitance

fT CCB

VCE = 3 V, IC = 35 mA f = 1 GHz VCB = 3 V, VBE = 0 f = 1 MHz

Emitter grounded

Collector emitter capacitance

CCE

0.42

pF

VCE = 3 V, VBE = 0 f = 1 MHz

Base grounded

Emitter base capacitance

CEB

0.65

pF

VEB = 0.5 V, VCB = 0 f = 1 MHz

Collector grounded

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Electrical Characteristics

5.3

Frequency Dependent AC Characteristics

Measurement setup is a test fixture with Bias Ts in a 50 system, TA = 25 C

VC Top View
Bias -T

OUT E C

VB B
(Pin 1)

Bias-T

IN

Figure 5-1 BFP760 Testing Circuit

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Electrical Characteristics

Table 5-3 Parameter Power gain

AC Characteristics, VCE = 3 V, f = 0.9 GHz Symbol Min. Values Typ. 29 28 0.5 25.5 14 27 Max. dB dB dBm Unit Note / Test Condition

Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity 1 dB compression point at output 3rd order intercept point at output Table 5-4 Parameter Power gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity 1 dB compression point at output 3rd order intercept point at output Table 5-5 Parameter Power gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity 1 dB compression point at output 3rd order intercept point at output

Gms
|S21|
2

IC = 30 mA IC = 30 mA IC = 10 mA IC = 10 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA

NFmin Gass OP1dB OIP3

AC Characteristics, VCE = 3 V, f = 1.8 GHz Symbol Min. Values Typ. 25 22 0.55 20.5 14.5 31.5 Max. dB dB dBm Unit Note / Test Condition

Gms
|S21|
2

IC = 30 mA IC = 30 mA IC = 10 mA IC = 10 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA

NFmin Gass OP1dB OIP3

AC Characteristics, VCE = 3 V, f = 2.4 GHz Symbol Min. Values Typ. 23.5 20 0.6 19 14 28 Max. dB dB dBm Unit Note / Test Condition

Gms
|S21|
2

IC = 30 mA IC = 30 mA IC = 10 mA IC = 10 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA

NFmin Gass OP1dB OIP3

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Electrical Characteristics

Table 5-6 Parameter Power gain

AC Characteristics, VCE = 3 V, f = 3.5 GHz Symbol Min. Values Typ. 21.5 16.5 0.7 16 14.5 28.5 Max. dB dB dBm Unit Note / Test Condition

Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity 1 dB compression point at output 3rd order intercept point at output Table 5-7 Parameter Power gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity 1 dB compression point at output 3rd order intercept point at output

Gms
|S21|
2

IC = 30 mA IC = 30 mA IC = 10 mA IC = 10 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA

NFmin Gass OP1dB OIP3

AC Characteristics, VCE = 3 V, f = 5.5 GHz Symbol Min. Values Typ. 16.5 12 0.95 12.5 13 27 Max. dB dB dBm Unit Note / Test Condition

Gms
|S21|
2

IC = 30 mA IC = 30 mA IC = 10 mA IC = 10 mA ZS = ZL = 50 IC = 30 mA IC = 30 mA

NFmin Gass OP1dB OIP3

Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.2 MHz to 12 GHz

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Electrical Characteristics

5.4

Characteristic DC Diagrams

70 350A 60 50 40 150A 30 100A 20 50A 10 10A 0 0 0.5 1 1.5 2 2.5 3 VCE [V] 3.5 4 4.5 5 300A 250A 200A IC [mA] hFE 10 0 10
2

Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in A

10

10 I [mA]
C

10

Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V Data Sheet 15 Revision 1.0, 2012-12-04

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Electrical Characteristics

10

10

10 IC [mA]

10

10

10

10

0.5

0.55

0.6

0.65 0.7 VBE [V]

0.75

0.8

0.85

Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V

10

10

10 IB [mA]

10

10

10

10

0.5

0.55

0.6

0.65 0.7 VBE [V]

0.75

0.8

0.85

Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V

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Electrical Characteristics

10

10

10 IB [A]

10

10

10

10

10

11

1.5

2 VEB [V]

2.5

Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V

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Electrical Characteristics

5.5

Characteristic AC Diagrams

50 45 40 35 fT [GHz] 30 2.50V 25 20 15 10 5 0 0 10 20 30 40 I [mA]

C

4.00V 3.50V 3.00V

2.00V

1.50V 1.00V 50 60 70 80

Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V

30

25

20 OIP3 [dBm]

15 2V, 2400MHz 3V, 2400MHz 2V, 5500MHz 3V, 5500MHz

10

10

20 I [mA] C

30

40

50

Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 , VCE, f = Parameters Data Sheet 18 Revision 1.0, 2012-12-04

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Electrical Characteristics

1 2 3 4 5 6 7 8 19 0 11 2 11 3 15 16 17

50 45 40

11 12 1 3 15 1 16 4 17 18 19 20 21 22 23 24

IC [mA]

30 25

25

27

35

26

24 25

18 19

22 23

20 21

26

27

28

28

26
27

20 15

23 22 21 20 19 18 17 16 15

25
26

24

14
1 1.5 2 2.5 VCE [V] 3 3.5
4

10

Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 , f = 5.5 GHz

01 2

40 35 30 25 20

14

15

10

2 1

12

11

13
12

14

13
4

IC [mA]

10

12
11

11
10 9 8 7 6 5 4

9
8 7 6 5 4
12

15 10 5

4
1 2

10 9 8 7 6 5 12
3.5

Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 , f = 5.5 GHz

5
3

3 3
4

0 21

1.5

0 21 3 4 2 2.5 VCE [V]

0 21
3

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Electrical Characteristics

0.28 0.24 0.2 0.16 0.12 0.08 0.04 0

CCB [pF]

0.6

1.2 V
CB

1.8 [V]

2.4

Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz

45 40 35 30 G G [dB] 25 20 G 15 10 5 0 |S21|
2 ma ms

5 f [G]

10

Figure 5-12 Gain Gma, Gms, IS21I = f (f), VCE = 3 V, IC = 30 mA

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Electrical Characteristics

40 35 30 25 Gmax [dB] 20 15 10 5 0

0.15GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 10.00GHz

10

20

30

40 50 I [mA]
C

60

70

80

90

Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
40 0.15GHz 35 0.45GHz 30 25
max

20 15 10 5 0

0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 10.00GHz

0.5

1.5

2 V

CE

2.5 3 [V]

3.5

4.5

Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz

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Electrical Characteristics

1 1.5 0.5 0.4

7.0 8.0 7.0 6.0 5.0 4.0 10.0 9.0 9.0 8.0 10.0

3 4 5

0.3 0.2
5.0

6.0

0.1 0.1

4.0 3.0 3.0 0.2

0.03 to 10 GHz
10 1 1.5 2 3 4 5
0.03 0.03

0.3 0.4 0.5

2.0

0.1
2.0 1.0

10

0.2 0.3

5 4 3

0.4 0.5

1.0

2 1.5 1

30mA 10mA

Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 3 V, IC = 10 / 30 mA

1 1.5 0.5 0.4 3 0.3 4 0.2 5 2

0.1
3.5

2.4

1.8

10
0.9

0.1

0.2 0.3 0.4 0.5

0.9 1.8 5.5

1
2.4 3.5 5.5

1.5

4 5

0.1

10
8.0

0.2 0.3

8.0

5 4 3

0.4 0.5 1.5 1 2

30mA 10mA

Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 10 / 30 mA

Data Sheet

22

Revision 1.0, 2012-12-04

BFP760

Electrical Characteristics

1 1.5 0.5 0.4 3 0.3

10.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 3.0 9.0 8.0

4 5

0.2

0.03 to 10 GHz
10 1 1.5 2 3 4 5
0.03 0.03

0.1 0.1

7.0 6.0

0.2 0.3 0.4 5.0 0.5

4.0

0.1

10
1.0

0.2 0.3 0.4 0.5

2.0

5 4
1.0

2 1.5 1

30mA 10mA

Figure 5-17 Output Reflection Coefficient S22 = f (f), VCE = 3 V, IC = 10 / 30 mA

2 1.8 1.6 1.4 NFmin [dB] 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 f [GHz] 5 6 7 8 IC = 30mA I = 10mA
C

Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 10 / 30 mA, ZS = Zopt

Data Sheet

23

Revision 1.0, 2012-12-04

BFP760

Electrical Characteristics

3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0

NFmin [dB]

f = 8GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz

10

15

20 IC [mA]

25

30

35

40

Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz

6 5.5 5 4.5 4 NF50 [dB] 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 IC [mA] 25 30 35 40 f = 8GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz

Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 , f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 C Data Sheet 24 Revision 1.0, 2012-12-04

BFP760

Simulation Data

Simulation Data

For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website. Please consult our website and download the latest versions before actually starting your design. You find the BFP760 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP760 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.

Data Sheet

25

Revision 1.0, 2012-12-04

BFP760

Package Information SOT343

Package Information SOT343

0.9 0.1 2 0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M

+0.1 0.6 -0.05

0.1 MAX. 0.1 A

0.1 MIN.

0.15 -0.05 0.2 M A

SOT343-PO V08

+0.1

Figure 7-1 Package Outline

0.6
0.8

1.15 0.9
SOT343-FP V08

Figure 7-2 Package Footprint

1.6

Type code

Date code (YM) 2005, June

XYs

56

Manufacturer

Pin 1

Figure 7-3 Marking Example (Marking BFP760: R6s)

0.2

Pin 1

2.15

2.3

1.1
SOT323-TP V02

Figure 7-4 Tape Dimensions Data Sheet 26 Revision 1.0, 2012-12-04

1.25 0.1

2.1 0.1

w w w . i n f i n e o n . c o m

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