BT258X

Philips Semiconductors
Product specification
Thyristors logic level

GENERAL DESCRIPTION
Glass passivated, sensitive gate thyristors in a full pack, plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
BT258X series
QUICK REFERENCE DATA

SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT258XRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 5 8 75 600R 600 5 8 75 800R 800 5 8 75 V A A A
PINNING - SOT186A
PIN 1 2 3 DESCRIPTION cathode anode gate
PIN CONFIGURATION
case
SYMBOL
case isolated
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Ths 90 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/s -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 5 0.5 150 1252 UNIT V A A A A A2s A/s A V V W W C C
VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current
I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. 2 Note: Operation above 110C may require the use of a gate to cathode resistor of 1k or less. September 1997 1 Rev 1.100

ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. -
BT258X series
TYP.
MAX. 2500
UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
10
pF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.0 6.9 UNIT K/W K/W K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 16 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 110 C VD = VDRM(max); VR = VRRM(max); Tj = 125 C MIN. 0.1 TYP. 50 0.4 0.3 1.3 0.4 0.2 0.1 MAX. 200 10 6 1.5 1.5 0.5 UNIT A mA mA V V V mA
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 100 ITM = 10 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 12 A; VR = 24 V; dITM/dt = 10 A/s; dVD/dt = 2 V/s; RGK = 1 k MIN. 50 TYP. 100 2 100 MAX. UNIT V/s s s
September 1997
Rev 1.100
BT258X series
8 7 6 5 4 3 2 1 0 0
Ptot / W
conduction angle degrees 30 60 90 120 180 form factor
BT150
a
4 2.8 2.2 1.9 1.57
Ths(max) / C a = 1.57 1.9
85 90 95 100 105 110 115 120
80 70 60 50 40 30 20 10 0
ITSM / A
BT258 IT I TSM
2.2 2.8 4
time T Tj initial = 25 C max
3 IF(AV) / A
125 6
10 100 Number of half cycles at 50Hz
1000
Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV).
BT150
Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
1000
ITSM / A
24 20 16 12
IT(RMS) / A
BT150
dI T/dt limit 100 I TSM T time
IT
8 4 0 0.01
Tj initial = 25 C max 10 10us 100us T/s 1ms 10ms
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 10ms.
IT(RMS) / A BT258 90 C
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths 90C.
VGT(Tj) VGT(25 C)
9 8 7 6 5 4 3 2 1
1.6 1.4 1.2 1 0.8 0.6
BT151
0 -50
50 Ths / C
100
150
0.4 -50
50 Tj / C
100
150
Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Ths.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.
September 1997
Rev 1.100
BT258X series
3 2.5 2 1.5 1 0.5
IGT(Tj) IGT(25 C)
BT150
30 25
IT / A Tj = 125 C Tj = 25 C
Vo = 0.99 V Rs = 0.0325 ohms
BT150+
20 15 10 5 0
typ
max
0 -50
50 Tj / C
100
150
0.5
1 VT / V
1.5
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3 2.5
BT150
10
Zth j-hs (K/W)
BT150
without heatsink compound
with heatsink compound
2 1.5 1 0.5 0 -50

0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s 0.1
P D tp
50 Tj / C
100
150
10s
Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25 C)
Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp.
dVD/dt (V/us)
3 2.5 2 1.5 1 0.5
BT150
1000
RGK = 100 ohms
100
10
0 -50
50 Tj / C
100
150
50 Tj / C
100
150
Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.
Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.
September 1997
Rev 1.100

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3 max 3.2 3.0
BT258X series
4.6 max 2.9 max
Recesses (2x) 2.5 0.8 max. depth
2.8 6.4 15.8 19 max. max. seating plane 15.8 max
3 max. not tinned 3 2.5 13.5 min. 1 0.4

M
3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7
5.08
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
Rev 1.100

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BT258X series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1997
Rev 1.100

BT258X

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Philips Semiconductors

Thyristors logic level

QUICK REFERENCE DATA

I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj

Thyristors logic level

Capacitance from T2 to external f = 1 MHz heatsink

Thyristors logic level

Ths(max) / C a = 1.57 1.9

85 90 95 100 105 110 115 120

time T Tj initial = 25 C max

10 100 Number of half cycles at 50Hz

dI T/dt limit 100 I TSM T time

Tj initial = 25 C max 10 10us 100us T/s 1ms 10ms

0.1 1 surge duration / s

1.6 1.4 1.2 1 0.8 0.6

Thyristors logic level

3 2.5 2 1.5 1 0.5

Fig.10. Typical and maximum on-state characteristic.

Zth j-hs (K/W)

with heatsink compound

2 1.5 1 0.5 0 -50

3 2.5 2 1.5 1 0.5

RGK = 100 ohms

Thyristors logic level

4.6 max 2.9 max

Recesses (2x) 2.5 0.8 max. depth

2.8 6.4 15.8 19 max. max. seating plane 15.8 max

3 max. not tinned 3 2.5 13.5 min. 1 0.4

3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7

Thyristors logic level

LIFE SUPPORT APPLICATIONS

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