Buk 456 60H

Philips Semiconductors
Product Specification
PowerMOS transistor
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Automotive and general purpose
switching applications.
PINNING - TO220AB
PIN
QUICK REFERENCE DATA

SYMBOL
PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
PIN CONFIGURATION
DESCRIPTION
gate
drain
source
tab
BUK456-60H
MAX.
UNIT
60
60
150
175
20
V
A
W
C
m
SYMBOL
d
tab
drain
s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
RGS = 20 k
Tmb = 25 C
Tmb = 100 C
Tmb = 25 C
Tmb = 25 C
-
- 55
-
60
60
30
60
46
240
150
175
175
V
V
V
A
A
A
W
C
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Thermal resistance junction to

mounting base
Thermal resistance junction to
ambient
Rth j-a
May 1993
MIN.
TYP.
MAX.
UNIT
1.0
K/W
60
K/W
Rev 1.100
PowerMOS transistor
BUK456-60H
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
MIN.
TYP.
MAX.
UNIT
VGS = 0 V; ID = 0.25 mA
60
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Tj = 25 C
VDS = 60 V; VGS = 0 V; Tj =125 C
VGS = 30 V; VDS = 0 V
VGS = 10 V; ID = 25 A
2.1
-
3.0
1
0.1
10
17
4.0
10
1.0
100
20
V
A
mA
nA
m
MIN.
TYP.
MAX.
UNIT
DYNAMIC CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
gfs
Forward transconductance
VDS = 25 V; ID = 25 A
17
22
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
1600
800
310
2200
1000
450
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time

Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 3 A;
VGS = 10 V;
RGS = 50 ;
Rgen = 50
30
90
190
140
40
120
250
180
ns
ns
ns
ns
Ld
Internal drain inductance
3.5
nH
Ld
Internal drain inductance
4.5
nH
Ls
Internal source inductance
Measured from contact screw on

tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
7.5
nH
MIN.
TYP.
MAX.
UNIT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

SYMBOL
PARAMETER
CONDITIONS
IDR
50
IDRM
VSD
Continuous reverse drain

current
Pulsed reverse drain current
Diode forward voltage
IF = 50 A ; VGS = 0 V
1.8
200
2.5
A
V
trr
Qrr
Reverse recovery time

Reverse recovery charge
IF = 50 A; -dIF/dt = 100 A/s;

VGS = 0 V; VR = 30 V
80
0.4
250
-
ns
C
MIN.
TYP.
MAX.
UNIT
150
mJ
AVALANCHE LIMITING VALUE

SYMBOL
PARAMETER
CONDITIONS
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 50 A ; VDD 25 V ;
VGS = 10 V ; RGS = 50
May 1993
Rev 1.100
PowerMOS transistor
120
BUK456-60H
Normalised Power Derating
PD%
10
Zth j-mb / (K/W)
BUKx56-lv
110
100
90
D=
80
0.5
70
0.2
0.1
0.05
60
0.1
50
0.02
40
30
0.01
tp
PD
10
0
0
20
40
60
80 100
Tmb / C
120
140
160
1E-05
1E-01
1E+01
Fig.4. Transient thermal impedance.

Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
1E-03
t/s
tp
T
t
0.001
180
Fig.1. Normalised power dissipation.

PD% = 100PD/PD 25 C = f(Tmb)
120
D=
20
100
ID / A
20
BUK456-60H
10
110
VGS / V = 7.5
15
100
80
90
80
60
70
6.5
60
50
40
40
5.5
30
20
20
4.5
10
0
0
20
40
60
80 100
Tmb / C
120
140
160
180
0.1
ID
S/
10
RDS(ON) / Ohm
4.5
BUK456-60H
5.5
6.5
0.08
VD
tp = 10 us
100
S(
RD
0.06
100 us
0.04
1 ms
DC
10
10 ms
100 ms
0.02
VGS / V = 15
1
1
10
100
20
40
10
60
80
100
ID / A
VDS / V
Fig.3. Safe operating area. Tmb = 25 C

ID & IDM = f(VDS); IDM single pulse; parameter tp
May 1993
Fig.5. Typical output characteristics, Tj = 25 C.

ID = f(VDS); parameter VGS
BUK456-60H
ID / A
=
N)
4
VDS / V
Fig.2. Normalised continuous drain current.

ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 10 V
1000
Fig.6. Typical on-state resistance, Tj = 25 C.

RDS(ON) = f(ID); parameter VGS
Rev 1.100
PowerMOS transistor
BUK456-60H
VGS(TO) / V
BUK456-60H
ID / A
100
max.
4
Tj / C = 25
80
150
typ.
3
60
min.
2
40
1
20
0
0
-60
10
-20
20
VGS / V
gfs / S
BUK456-60H
30
100
140
180
Fig.10. Gate threshold voltage.

VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.7. Typical transfer characteristics.

ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
35
60
Tj / C
Tj / C = 25
SUB-THRESHOLD CONDUCTION
ID / A
1E-01
1E-02
25
150
2%
1E-03
20
15
typ
98 %
1E-04
10
1E-05
5
1E-06
0
0
20
40
60
80
100
2
VGS / V
ID / A
Fig.8. Typical transconductance, Tj = 25 C.

gfs = f(ID); conditions: VDS = 25 V
2.0
Fig.11. Sub-threshold drain current.

ID = f(VGS); conditions: Tj = 25 C; VDS = VGS
Normalised RDS(ON) = f(Tj)
10000
BUK456-60H
C / pF
1.5
Ciss
1000
1.0
Coss
0.5
Crss
100
0
-60
-20
20
60
Tj / C
100
140
180
20
40
VDS / V
Fig.9. Normalised drain-source on-state resistance.

a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 10 V
May 1993
Fig.12. Typical capacitances, Ciss, Coss, Crss.

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Rev 1.100
PowerMOS transistor
15
BUK456-60H
VGS / V
BUK456-60H
120
WDSS%
110
100
VDS / V =12
90
10
80
48
70
60
50
40
30
20
10
0
0
0
20
40
QG / nC
60
20
80
Fig.13. Typical turn-on gate-charge characteristics.

VGS = f(QG); conditions: ID = 50 A; parameter VDS
100
IS / A
40
60
80
100
120
Tmb / C
140
160
180
Fig.15. Normalised avalanche energy rating.

WDSS% = f(Tmb); conditions: ID = 50 A
BUK456-60H
VDD
+
L
80
Tj / C = 25
150
VDS
60
VGS
-ID/100
40
T.U.T.
0
20
RGS
R 01
shunt
0
0
0.5
1.5
VSDS / V
Fig.16. Avalanche energy test circuit.

WDSS = 0.5 LID2 BVDSS /(BVDSS VDD )
Fig.14. Typical reverse diode current.

IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
May 1993
Rev 1.100
PowerMOS transistor
BUK456-60H
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.17. TO220AB; pin 2 connected to mounting base.

Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
May 1993
Rev 1.100
PowerMOS transistor
BUK456-60H
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
May 1993
Rev 1.100

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Philips Semiconductors

QUICK REFERENCE DATA

Thermal resistance junction to

VGS = 0 V; VDS = 25 V; f = 1 MHz

Turn-on delay time

Internal drain inductance

Internal drain inductance

Internal source inductance

Measured from contact screw on

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Continuous reverse drain

Reverse recovery time

IF = 50 A; -dIF/dt = 100 A/s;

AVALANCHE LIMITING VALUE

Normalised Power Derating

Zth j-mb / (K/W)

Fig.4. Transient thermal impedance.

Normalised Current Derating

Fig.1. Normalised power dissipation.

Fig.3. Safe operating area. Tmb = 25 C

Fig.5. Typical output characteristics, Tj = 25 C.

Fig.2. Normalised continuous drain current.

Fig.6. Typical on-state resistance, Tj = 25 C.

Fig.10. Gate threshold voltage.

Fig.7. Typical transfer characteristics.

Fig.8. Typical transconductance, Tj = 25 C.

Fig.11. Sub-threshold drain current.

Normalised RDS(ON) = f(Tj)

Fig.9. Normalised drain-source on-state resistance.

Fig.12. Typical capacitances, Ciss, Coss, Crss.

Fig.13. Typical turn-on gate-charge characteristics.

Fig.15. Normalised avalanche energy rating.

Fig.16. Avalanche energy test circuit.

Fig.14. Typical reverse diode current.

0,9 max (3x)

Fig.17. TO220AB; pin 2 connected to mounting base.

This data sheet contains final product specifications.

LIFE SUPPORT APPLICATIONS

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