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    De375 102n10a

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    kleeph
    The document describes an RF power MOSFET with maximum ratings up to 1000V and currents up to 60A. It provides detailed electrical characteristics, diagrams, and a SPICE model. The MOSFET is optimized for high-speed switching under 500W for applications like RF power amplification.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    De375 102n10a

    Uploaded by

    kleeph
    173 views5 pages
    The document describes an RF power MOSFET with maximum ratings up to 1000V and currents up to 60A. It provides detailed electrical characteristics, diagrams, and a SPICE model. The MOSFET is optimized for high-speed switching under 500W for applications like RF power amplification.

    Original Description:

    dE375_102N10A

    Original Title

    de375_102n10a

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    © © All Rights Reserved

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    The document describes an RF power MOSFET with maximum ratings up to 1000V and currents up to 60A. It provides detailed electrical characteristics, diagrams, and a SPICE model. The MOSFET is optimized for high-speed switching under 500W for applications like RF power amplification.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    173 views5 pages

    De375 102n10a

    Uploaded by

    kleeph
    The document describes an RF power MOSFET with maximum ratings up to 1000V and currents up to 60A. It provides detailed electrical characteristics, diagrams, and a SPICE model. The MOSFET is optimized for high-speed switching under 500W for applications like RF power amplification.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    DE375-102N10A

    RF Power MOSFET
    N-Channel Enhancement Mode
    Low Qg and Rg
    High dv/dt
    Nanosecond Switching
    Ideal for Class C, D, & E Applications
    Symbol

    Test Conditions

    Maximum Ratings

    VDSS

    TJ = 25C to 150C

    1000

    VDGR

    TJ = 25C to 150C; RGS = 1 M

    1000

    VGS

    Continuous

    20

    VGSM

    Transient

    30

    ID25

    Tc = 25C

    10

    IDM

    Tc = 25C, pulse width limited by TJM

    60

    IAR

    Tc = 25C

    10

    EAR

    Tc = 25C

    30

    mJ

    IS IDM, di/dt 100A/s, VDD VDSS,


    Tj 150C, RG = 0.2

    V/ns

    dv/dt

    >200

    V/ns

    940

    425

    4.5

    RthJC

    0.16

    C/W

    RthJHS

    0.23

    C/W

    IS = 0

    PDC
    PDHS

    Tc = 25C
    Derate 4.4W/C above 25C

    PDAMB

    Tc = 25C

    VDSS

    1000 V

    ID25

    10 A

    RDS(on)

    1.2

    PDC

    940 W

    DRAIN
    GATE

    SG1

    SG2

    SD1

    SD2

    Features

    Symbol

    Test Conditions

    Characteristic Values
    TJ = 25C unless otherwise specified

    min.
    VDSS

    VGS = 0 V, ID = 3 ma

    VGS(th)

    VDS = VGS, ID = 250A

    IGSS

    VGS = 20 VDC, VDS = 0

    IDSS

    VDS = 0.8 VDSS TJ = 25C


    VGS = 0
    TJ = 125C

    RDS(on)

    VGS = 15 V, ID = 0.5ID25
    Pulse test, t 300S, duty cycle d 2%

    gfs

    VDS = 20 V, ID = 0.5ID25, pulse test

    typ.

    1000
    2.5

    3.1

    Advantages

    100

    nA

    6
    +150

    -55
    1.6mm (0.063 in) from case for 10 s

    150

    Tstg

    5.5

    1.2

    +150

    cycling capability
    IXYS advanced low Qg process

    50 A
    1 mA

    TJM

    Weight

    -55

    TJ

    TL

    max.

    Isolated Substrate
    high isolation voltage (>2500V)
    excellent thermal transfer
    Increased temperature and power
    Low gate charge and capacitances
    easier to drive
    faster switching
    Low RDS(on)
    Very low insertion inductance (<2nH)
    No beryllium oxide (BeO) or other
    hazardous materials

    Optimized for RF and high speed

    Easy to mountno insulators needed


    High power density

    300

    switching at frequencies to 50MHz

    DE375-102N10A
    RF Power MOSFET
    Symbol

    Test Conditions

    Characteristic Values
    (TJ = 25C unless otherwise specified)
    min.

    typ.
    0.3

    2750

    pF

    110

    pF

    20

    pF

    33

    pF

    ns

    ns

    ns

    ns

    81

    nC

    16

    nC

    42

    nC

    RG
    Ciss
    Coss

    VGS = 0 V, VDS = 0.8 VDSS(max),


    f = 1 MHz

    Crss
    Cstray

    max.

    Back Metal to any Pin

    Td(on)
    Ton
    Td(off)

    VGS = 15 V, VDS = 0.8 VDSS


    ID = 0.5 IDM
    RG = 0.2 (External)

    Toff
    Qg(on)
    Qgs

    VGS = 10 V, VDS = 0.5 VDSS


    ID = 0.5 ID25

    Qgd
    Source-Drain Diode

    Characteristic Values
    (TJ = 25C unless otherwise specified)

    Symbol

    Test Conditions

    min.

    IS

    VGS = 0 V

    10

    ISM

    Repetitive; pulse width limited by TJM

    80

    VSD

    IF = IS, VGS = 0 V,
    Pulse test, t 300 s, duty cycle 2%

    1.5

    Trr
    QRM

    IF = IS, -di/dt = 100A/s,


    VR = 100V

    typ.

    max.

    200

    ns

    0.6

    IRM

    For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical
    note on the IXYSRF web site at;
    http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf

    IXYS RF reserves the right to change limits, test conditions and dimensions.
    IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
    4,835,592

    4,860,072

    4,881,106

    4,891,686

    4,931,844

    5,017,508

    5,034,796

    5,049,961

    5,063,307

    5,187,117

    5,237,481

    5,486,715

    5,381,025

    5,640,045

    DE375-102N10A
    RF Power MOSFET
    Fig. 1

    Fig. 2

    Typical Transfer Characteristics


    V DS = 60V, PW = 4uS

    35

    20

    Typical Output Characteristics

    Top

    ID, Drain Current (A)

    ID, Drain Current (A)

    30
    25
    20
    15
    10

    15
    Bottom

    7.5-10V
    7V
    6.5V
    6V
    5.5V
    5V

    10

    5
    0

    0
    5

    10

    10

    50

    60

    50

    60

    Extended Typical Output Characteristics


    35

    14

    Top

    30

    12

    ID, Drain Currnet (A)

    Gate-to-Source Voltage (V)

    40

    Fig. 4

    Gate Charge vs. Gate-to-Source Voltage


    V DS = 500V, ID = 5A

    16

    10
    8
    6
    4

    25
    Bottom

    8-10V
    7.5V
    7V
    6.5V
    6V
    5.5V
    5V

    20
    15
    10
    5

    2
    0
    0

    20

    40

    60

    80

    100

    120

    140

    Gate Charge (nC)

    Fig. 5

    VD S vs. Capacitance

    Ciss
    1000

    Coss
    100

    Crss
    10

    1
    0

    100

    200

    300

    400

    VDS Voltage

    10

    20

    30

    40

    VDS, Drain-to-Source Voltage (V)

    10000

    Capacitance (pF)

    30

    VDS, Drain-to-Source Voltage (V)

    VGS, Gate-to Source Voltage (V)

    Fig. 3

    20

    500

    600

    700

    800

    DE375-102N10A
    RF Power MOSFET
    Fig. 6 Package Drawing

    Source

    Source

    Gate

    Drain

    Source

    Source

    DE375-102N10A
    RF Power MOSFET
    DE375-0001 DE-SERIES SPICE Model
    The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
    LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term.
    The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay
    are adjusted via Ron and Roff.

    Figure 7 DE-SERIES SPICE Model

    This SPICE model may be downloaded as a text file from the IXYSRF web site
    at www.ixysrf.com/spice.htm
    Net List:
    .SUBCKT 102N10A 10 20 30
    * TERMINALS: D G S
    * 1000 Volt 10 Amp 1.2 ohm N-Channel Power MOSFET
    * REV.A 05-23-00
    M1 1 2 3 3 DMOS L=1U W=1U
    RON 5 6 0.5
    DON 6 2 D1
    ROF 5 7 .1
    DOF 2 7 D1
    D1CRS 2 8 D2
    D2CRS 1 8 D2
    CGS 2 3 3.0N
    RD 4 1 1.5
    DCOS 3 1 D3
    RDS 1 3 5.0MEG
    LS 3 30 .5N
    LD 10 4 1N
    LG 20 5 1N
    .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
    .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
    .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
    .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
    .ENDS

    Doc #9200-0223-0001 Rev 2


    2009 IXYS RF

    An

    IXYS Company

    2401 Research Blvd., Suite 108


    Fort Collins, CO USA 80526
    970-493-1901 Fax: 970-493-1903
    Email: sales@ixyscolorado.com
    Web: http://www.ixyscolorado.com

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