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    JANTX2N6768 Hexfet Transistors JANTXV2N6768 THRU-HOLE (TO-204AA/AE) (REF:MIL-PRF-19500/543) IRF350

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    Miloud Chougui
    The document provides specifications for the IRF350 HEXFET transistor. It includes: 1) Key specifications for the IRF350 including a breakdown voltage of 400V, on-resistance of 0.300Ω, and continuous drain current of 14A. 2) An overview of the benefits of HEXFET technology including low on-state resistance, high reverse energy capability, and fast switching. 3) Tables listing the electrical characteristics, thermal resistance, and maximum ratings for the IRF350 transistor.

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    JANTX2N6768 Hexfet Transistors JANTXV2N6768 THRU-HOLE (TO-204AA/AE) (REF:MIL-PRF-19500/543) IRF350

    Uploaded by

    Miloud Chougui
    14 views7 pages
    The document provides specifications for the IRF350 HEXFET transistor. It includes: 1) Key specifications for the IRF350 including a breakdown voltage of 400V, on-resistance of 0.300Ω, and continuous drain current of 14A. 2) An overview of the benefits of HEXFET technology including low on-state resistance, high reverse energy capability, and fast switching. 3) Tables listing the electrical characteristics, thermal resistance, and maximum ratings for the IRF350 transistor.

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    The document provides specifications for the IRF350 HEXFET transistor. It includes: 1) Key specifications for the IRF350 including a breakdown voltage of 400V, on-resistance of 0.300Ω, and continuous drain current of 14A. 2) An overview of the benefits of HEXFET technology including low on-state resistance, high reverse energy capability, and fast switching. 3) Tables listing the electrical characteristics, thermal resistance, and maximum ratings for the IRF350 transistor.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    14 views7 pages

    JANTX2N6768 Hexfet Transistors JANTXV2N6768 THRU-HOLE (TO-204AA/AE) (REF:MIL-PRF-19500/543) IRF350

    Uploaded by

    Miloud Chougui
    The document provides specifications for the IRF350 HEXFET transistor. It includes: 1) Key specifications for the IRF350 including a breakdown voltage of 400V, on-resistance of 0.300Ω, and continuous drain current of 14A. 2) An overview of the benefits of HEXFET technology including low on-state resistance, high reverse energy capability, and fast switching. 3) Tables listing the electrical characteristics, thermal resistance, and maximum ratings for the IRF350 transistor.

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    of 7

    PD - 90339F

    REPETITIVE A V ALANCHE AND dv/dt RATED

    HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)


    Product Summary
    Part Number IRF350 BVDSS 400V RDS(on) 0.300 ID 14A

    IRF350 JANTX2N6768 JANTXV2N6768 [REF:MIL-PRF-19500/543] 400V, N-CHANNEL

    The HEXFETtechnology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

    TO-3

    Features:
    n n n n n

    Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling

    Absolute Maximum Ratings


    Parameter
    ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C I DM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 14 9.0 56 150 1.2 20 11.3 14 15 4.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (typical)

    Units A
    W
    W/C

    V mJ A mJ V/ns
    o

    C
    g

    www.irf.com

    1
    01/22/01

    IRF350

    Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)


    Parameter
    BVDSS BV DSS/TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current

    Min
    400 2.0 6.0 52 5.0 25

    Typ Max Units


    0.46 6.1 0.300 0.400 4.0 25 250 100 -100 110 18 65 35 190 170 130 V V/C V S( ) A

    Test Conditions
    VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 10V, ID =9.0A VGS =10V, ID =14A VDS = VGS, ID =250A VDS > 15V, IDS =9.0A VDS=320V, VGS=0V VDS =320V VGS = 0V, TJ = 125C VGS =20V VGS =-20V VGS =10V, ID=14A VDS =200V VDD =200V, ID =14A, RG =2.35

    IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD

    Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance

    nA

    nC

    ns

    nH

    Measured from the center of drain pad to center of source pad VGS = 0V, VDS =25V f = 1.0MHz

    Ciss Coss Crss

    Input Capacitance Output Capacitance Reverse Transfer Capacitance

    2600 680 250

    pF

    Source-Drain Diode Ratings and Characteristics


    Parameter
    IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

    Min Typ Max Units


    14 56 1.7 1200 250

    Test Conditions

    V nS c

    Tj = 25C, IS =14A, VGS = 0V Tj = 25C, IF =14A, di/dt 100A/s VDD 50V

    Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

    Thermal Resistance
    Parameter
    RthJC R thJA Junction to Case Junction to Ambient

    Min Typ Max Units


    0.83 30
    C/W

    Test Conditions
    Typical socket mount

    For footnotes refer to the last page

    www.irf.com

    IRF350

    Fig 1. Typical Output Characteristics

    Fig 2. Typical Output Characteristics

    Fig 3.

    Typical Transfer Characteristics

    Fig 4.

    Normalized On-Resistance Vs. Temperature

    www.irf.com

    IRF350

    13 a& b

    Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

    Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

    Fig 7. Typical Source-Drain Diode Forward Voltage

    Fig 8. Maximum Safe Operating Area

    www.irf.com

    IRF350

    V DS VGS RG

    RD

    D.U.T.
    +

    -V DD

    10V
    Pulse Width 1 s Duty Factor 0.1 %

    Fig 10a. Switching Time Test Circuit


    VDS 90%

    10% VGS

    Fig 9. Maximum Drain Current Vs. Case Temperature

    td(on)

    tr

    t d(off)

    tf

    Fig 10b. Switching Time Waveforms

    Fig 11.

    Maximum Effective Transient Thermal Impedance, Junction-to-Case

    www.irf.com

    IRF350

    1 5V

    VD S

    D R IV E R

    RG

    D .U .T
    IA S

    + V - DD

    10V 20V
    tp

    0 .0 1

    Fig 12a. Unclamped Inductive Test Circuit

    V (B R )D S S tp

    Fig 12c. Maximum Avalanche Energy Vs. Drain Current

    IAS

    Fig 12b.

    Unclamped Inductive Waveforms

    Current Regulator Same Type as D.U.T.

    50K

    QG

    12V

    .2F

    .3F

    10 V
    QGS VG QGD
    VGS
    3mA

    D.U.T.

    + V - DS

    Charge

    IG

    ID

    Current Sampling Resistors

    Fig 13a. Basic Gate Charge Waveform

    Fig 13b. Gate Charge Test Circuit

    www.irf.com

    IRF350

    Repetitive Rating; Pulse width limited by


    maximum junction temperature. VDD =50V, starting TJ = 25C, Peak IL = 14A,

    Foot Notes:

    ISD 14A, di/dt 145A/s,

    VDD 400V, TJ 150C Suggested RG =2.35 Pulse width 300 s; Duty Cycle 2%

    Case Outline and Dimensions TO-204AA (Modified TO-3)

    IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 01/01

    www.irf.com

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