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    4N65

    Uploaded by

    Vicente Malvica
    The UTC 4N65 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This Power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    4N65

    Uploaded by

    Vicente Malvica
    337 views8 pages
    The UTC 4N65 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This Power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

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    © Attribution Non-Commercial (BY-NC)

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    The UTC 4N65 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This Power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    337 views8 pages

    4N65

    Uploaded by

    Vicente Malvica
    The UTC 4N65 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This Power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 8

    UNISONIC TECHNOLOGIES CO.

    , LTD 4N65
    4 Amps, 650 Volts N-CHANNEL POWER MOSFET
    1

    Power MOSFET

    TO-220

    DESCRIPTION
    The UTC 4N65 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

    TO-220F

    TO-220F1

    FEATURES
    * RDS(ON) = 2.5 @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
    1

    1 TO-251

    TO-252

    SYMBOL
    2.Drain
    1 1

    TO-263

    TO-262

    1.Gate

    3.Source

    ORDERING INFORMATION
    Ordering Number Lead Free Halogen Free 4N65L-TA3-T 4N65G-TA3-T 4N65L- TF1-T 4N65G-TF1-T 4N65L- TF3-T 4N65G-TF3-T 4N65L-TM3-T 4N65G-TM3-T 4N65L-TN3-R 4N65G-TN3-R 4N65L-T2Q-T 4N65G-T2Q-T 4N65L-TQ2-R 4N65G-TQ2-R 4N65L-TQ2-T 4N65G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F TO-251 TO-252 TO-262 TO-263 TO-263 1 G G G G G G G G Pin Assignment 2 3 D S D S D S D S D S D S D S D S Packing Tube Tube Tube Tube Tape Reel Tube Tape Reel Tube

    www.unisonic.com.tw Copyright 2010 Unisonic Technologies Co., Ltd

    1 of 8
    QW-R502-397.B

    4N65
    ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)

    Power MOSFET

    PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 4.4 A Continuous ID 4.0 A Drain Current Pulsed (Note 2) IDM 16 A Single Pulsed (Note 3) EAS 260 mJ Avalanche Energy 10.6 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 106 W TO-220F/TO-220F1 36 W Power Dissipation PD TO-251 50 W TO-252 50 W Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 , Starting TJ = 25C 4. ISD4.4A, di/dt 200A/s, VDDBVDSS, Starting TJ = 25C

    ELECTRICAL CHARACTERISTICS (TC =25, unless otherwise specified)


    PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS MIN TYP MAX UNIT 650 10 100 -100 0.6 2.0 4.0 2.5 520 70 8 670 90 11 V A nA nA V/ V pF pF pF

    VGS = 0 V, ID = 250 A VDS = 650 V, VGS = 0 V Forward VGS = 30 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient BVDSS/TJ ID = 250 A, Referenced to 25C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 A Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2 A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, f = 1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    2 of 8
    QW-R502-397.B

    4N65
    ELECTRICAL CHARACTERISTICS(Cont.)

    Power MOSFET

    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 13 35 VDD = 300V, ID = 4.0A, RG = 25 Turn-On Rise Time tR 45 100 (Note 1, 2) Turn-Off Delay Time tD(OFF) 25 60 Turn-Off Fall Time tF 35 80 Total Gate Charge QG 15 20 VDS= 480V,ID= 4.0A, VGS= 10 V Gate-Source Charge QGS 3.4 (Note 1, 2) Gate-Drain Charge QGD 7.1 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A 1.4 Maximum Continuous Drain-Source Diode IS 4.4 Forward Current Maximum Pulsed Drain-Source Diode ISM 17.6 Forward Current VGS = 0 V, IS = 4.4 A, Reverse Recovery Time tRR 250 dIF/dt = 100 A/s (Note 1) 1.5 Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width300s, Duty cycle2% 2. Essentially independent of operating temperature

    UNIT ns ns ns ns nC nC nC V A A ns C

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    3 of 8
    QW-R502-397.B

    4N65
    TEST CIRCUITS AND WAVEFORMS

    Power MOSFET

    D.U.T.

    + VDS -

    + L

    RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD

    Fig. 1A Peak Diode Recovery dv/dt Test Circuit

    VGS (Driver)

    Period P.W.

    D=

    P. W. Period

    VGS= 10V

    IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt

    Body Diode Recovery dv/dt VDS (D.U.T.) VDD

    Body Diode

    Forward Voltage Drop

    Fig. 1B Peak Diode Recovery dv/dt Waveforms

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    4 of 8
    QW-R502-397.B

    4N65
    TEST CIRCUITS AND WAVEFORMS (Cont.)

    Power MOSFET

    Fig. 2A Switching Test Circuit

    Fig. 2B Switching Waveforms

    Fig. 3A Gate Charge Test Circuit

    Fig. 3B Gate Charge Waveform

    L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD

    ID(t)

    VDS(t)

    10V

    Fig. 4A Unclamped Inductive Switching Test Circuit

    Fig. 4B Unclamped Inductive Switching Waveforms

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    5 of 8
    QW-R502-397.B

    4N65
    TYPICAL CHARACTERISTICS
    Breakdown Voltage Variation vs. Temperature 1.2 Drain-Source Breakdown Voltage, BVDSS (Normalized) (V) Drain-Source On-Resistance, RDS(ON) (Normalized) () 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100

    Power MOSFET

    On-Resistance Junction Temperature

    1.1

    1.0

    0.9

    Note: 1. VGS=0V 2. ID=250A -50 0 50 100 150 200

    Note: 1. VGS=10V 2. ID=4A -50 0 50 100 150 200

    0.8 -100

    Junction Temperature, TJ ()

    Junction Temperature, TJ ()

    On-State Characteristics 10
    VGS 10V 9V 8V 7V 6V 5.5V 5 V Bottorm:5.0V Top:

    Transfer Characteristics 10

    25 5.0V 1 150

    0.1

    Notes: 1. 250s Pulse Test 2. TC=25

    0.1 2 4 6

    Notes: 1. VDS=50V 2. 250s Pulse Test

    0.1

    10

    10

    Drain-to-Source Voltage, VDS (V)

    Gate-Source Voltage, VGS (V)

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    6 of 8
    QW-R502-397.B

    4N65
    TYPICAL CHARACTERISTICS(Cont.)

    Power MOSFET

    Thermal Response, JC (t)

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    PD (w)

    Gate-Source Voltage, VGS (V)

    Capacitance (pF)

    7 of 8
    QW-R502-397.B

    4N65
    TYPICAL CHARACTERISTICS(Cont.)

    Power MOSFET

    UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

    Drain Current, ID (A)

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    8 of 8
    QW-R502-397.B

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