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    12N60

    Uploaded by

    Riza Badua
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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    12N60

    Uploaded by

    Riza Badua
    294 views7 pages
    smd

    Copyright

    © © All Rights Reserved

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    smd

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    294 views7 pages

    12N60

    Uploaded by

    Riza Badua
    smd

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 7

    UNISONIC TECHNOLOGIES CO.

    , LTD
    12N60

    Power MOSFET

    12A, 600V N-CHANNEL


    POWER MOSFET

    DESCRIPTION

    The UTC 12N60 are N-Channel enhancement mode power


    field effect transistors (MOSFET) which are produced using
    UTCs proprietary, planar stripe, DMOS technology.
    These devices are suited for high efficiency switch mode
    power supply. To minimize on-state resistance, provide superior
    switching performance, and withstand high energy pulse in the
    avalanche and commutation mode the advanced technology has
    been especially tailored.

    FEATURES

    * RDS(ON) = 0.8 @VGS = 10 V


    * Ultra low gate charge ( typical 42 nC )
    * Low reverse transfer capacitance ( CRSS = typical 25 pF )
    * Fast switching capability
    * Avalanche energy specified
    * Improved dv/dt capability, high ruggedness

    SYMBOL

    ORDERING INFORMATION

    Ordering Number
    Package
    Lead Free
    Halogen Free
    12N60L-TA3-T
    12N60G-TA3-T
    TO-220
    12N60L-TF1-T
    12N60G-TF1-T
    TO-220F1
    12N60L-TF2-T
    12N60G-TF2-T
    TO-220F2
    12N60L-TF3-T
    12N60G-TF3-T
    TO-220F
    12N60L-T2Q-T
    12N60G-T2Q-T
    TO-262
    Note: Pin Assignment: G: Gate
    D: Drain
    S: Source

    www.unisonic.com.tw
    Copyright 2013 Unisonic Technologies Co., Ltd

    Pin Assignment
    1
    2
    3
    G
    D
    S
    G
    D
    S
    G
    D
    S
    G
    D
    S
    G
    D
    S

    Packing
    Tube
    Tube
    Tube
    Tube
    Tube

    1 of 7
    QW-R502-170.J

    12N60

    Power MOSFET

    ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise specified)

    PARAMETER
    SYMBOL
    RATINGS
    UNIT
    Drain-Source Voltage
    VDSS
    600
    V
    Gate-Source Voltage
    VGSS
    30
    V
    Avalanche Current (Note 2)
    IAR
    12
    A
    12
    A
    Continuous
    ID
    Drain Current
    Pulsed (Note 2)
    IDM
    48
    A
    790
    mJ
    Single Pulsed (Note 3)
    EAS
    Avalanche Energy
    Repetitive (Note 2)
    EAR
    24
    mJ
    Peak Diode Recovery dv/dt (Note 4)
    dv/dt
    4.5
    V/ns
    TO-220 / TO-262
    225
    W
    Power Dissipation
    TO-220F / TO-220F1
    PD
    51
    W
    TO-220F2
    54
    W
    Junction Temperature
    TJ
    +150
    C
    Operating Temperature
    TOPR
    -55 ~ +150
    C
    Storage Temperature
    TSTG
    -55 ~ +150
    C
    Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
    Absolute maximum ratings are stress ratings only and functional device operation is not implied.
    2. Repetitive Rating : Pulse width limited by maximum junction temperature
    3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25C
    4. ISD 12A, di/dt 200A/s, VDD BVDSS Starting TJ = 25C

    THERMAL DATA

    PARAMETER
    Junction to Ambient
    TO-220 / TO-262
    Junction to Case
    TO-220F/TO-220F1
    TO-220F2

    SYMBOL
    JA
    JC

    RATING
    62.5
    0.56
    2.43
    2.31

    UNIT
    C/W
    C/W
    C/W
    C/W

    ELECTRICAL CHARACTERISTICS (TC =25C, unless otherwise specified)

    PARAMETER
    SYMBOL
    OFF CHARACTERISTICS
    Drain-Source Breakdown Voltage
    BVDSS
    Drain-Source Leakage Current
    IDSS
    Gate-Source Leakage Current
    IGSS
    Breakdown Voltage Temperature Coefficient BVDSS/TJ
    ON CHARACTERISTICS
    Gate Threshold Voltage
    VGS(TH)
    Static Drain-Source On-State Resistance
    RDS(ON)
    DYNAMIC CHARACTERISTICS
    Input Capacitance
    CISS
    Output Capacitance
    COSS
    Reverse Transfer Capacitance
    CRSS
    Gate Resistance
    RG

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    TEST CONDITIONS

    MIN TYP MAX UNIT

    VGS = 0 V, ID = 250 A
    600
    VDS = 600 V, VGS = 0 V
    VGS = 30 V, VDS = 0 V
    ID=250A, Referenced to 25C

    V
    1
    A
    100 nA
    0.7
    V/C

    VDS = VGS, ID = 250A


    VGS = 10V, ID = 6.0A

    0.6

    VDS = 25 V, VGS = 0 V,
    f = 1MHz
    VDS =0V, VGS =0V, f =1MHz

    2.0

    4.0
    0.8

    1480 1900
    200 270
    25
    35
    0.2
    1.2

    pF
    pF
    pF

    2 of 7
    QW-R502-170.J

    12N60

    Power MOSFET

    ELECTRICAL CHARACTERISTICS(Cont.)

    PARAMETER
    SYMBOL
    TEST CONDITIONS
    SWITCHING CHARACTERISTICS
    Turn-On Delay Time
    tD(ON)
    Turn-On Rise Time
    tR
    VDD = 300V, ID = 12A,
    RG = 25 (Note 1, 2)
    Turn-Off Delay Time
    tD(OFF)
    Turn-Off Fall Time
    tF
    Total Gate Charge
    QG
    VDS= 480V,ID= 12A,
    Gate-Source Charge
    QGS
    VGS= 10 V (Note 1, 2)
    Gate-Drain Charge
    QGD
    SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
    Drain-Source Diode Forward Voltage
    VSD
    VGS = 0 V, IS = 12A
    Maximum Continuous Drain-Source Diode
    IS
    Forward Current
    Maximum Pulsed Drain-Source Diode
    ISM
    Forward Current
    Reverse Recovery Time
    trr
    VGS = 0 V, IS = 12A,
    dIF/dt = 100 A/s (Note 1)
    Reverse Recovery Charge
    QRR
    Notes: 1. Pulse Test : Pulse width 300s, Duty cycle 2%
    2. Essentially independent of operating temperature.

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    MIN TYP MAX UNIT


    30
    115
    95
    85
    42
    8.6
    21

    380
    3.5

    70
    240
    200
    180
    54

    ns
    ns
    ns
    ns
    nC
    nC
    nC

    1.4

    12

    48

    A
    ns
    C

    3 of 7
    QW-R502-170.J

    12N60

    Power MOSFET

    TEST CIRCUITS AND WAVEFORMS


    +

    D.U.T.

    VDS
    +
    -

    RG
    Driver
    VGS

    VGS
    (Driver)

    P.W.

    * dv/dt controlled by RG
    * ISD controlled by pulse period
    * D.U.T.-Device Under Test

    Same Type
    as D.U.T.

    Period

    D=

    VDD

    P. W.
    Period

    VGS= 10V

    IFM, Body Diode Forward Current


    ISD
    (D.U.T.)

    di/dt
    IRM
    Body Diode Reverse Current

    Body Diode Recovery dv/dt


    VDS
    (D.U.T.)

    VDD

    Body Diode

    Forward Voltage Drop

    Peak Diode Recovery dv/dt Waveforms

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    4 of 7
    QW-R502-170.J

    12N60

    Power MOSFET

    TEST CIRCUITS AND WAVEFORMS (Cont.)

    Switching Test Circuit

    12V

    Same Type
    as D.U.T.

    50k
    0.2F

    Switching Waveforms

    QG

    10V

    0.3F
    VDS

    QGS

    QGD

    VGS
    DUT
    3mA

    VGS

    Charge

    Gate Charge Test Circuit

    Unclamped Inductive Switching Test Circuit

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    Gate Charge Waveform

    Unclamped Inductive Switching Waveforms

    5 of 7
    QW-R502-170.J

    12N60

    Power MOSFET

    TYPICAL CHARACTERISTICS
    Transfer Characteristics

    On-Resign Characteristics
    Top:

    VGS
    15V
    10V
    101
    8.0V
    7.0V
    6.5V
    6.0V
    Bottom: 5.5V

    101

    25C
    -55C
    10

    10

    Notes:
    250s Pulse Test
    TC=25C
    10-1

    150C

    100
    101
    Drain-Source Voltage, VGS (V)

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    Notes:
    1.VDS=50V
    2.250s Pulse Test
    10-1
    2

    4
    6
    8
    Gate-Source Voltage, VGS (V)

    10

    6 of 7
    QW-R502-170.J

    12N60
    TYPICAL CHARACTERISTICS

    Thermal Response, ZJC(t)

    Drain Current, ID (A)

    Power MOSFET

    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
    other parameters) listed in products specifications of any and all UTC products described or contained
    herein. UTC products are not designed for use in life support appliances, devices or systems where
    malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
    whole or in part is prohibited without the prior written consent of the copyright owner. The information
    presented in this document does not form part of any quotation or contract, is believed to be accurate
    and reliable and may be changed without notice.

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    7 of 7
    QW-R502-170.J

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