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    Unisonic Technologies Co., LTD: 9.4A, 100V P-CHANNEL Power Mosfet

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    boubker2bessai

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    Unisonic Technologies Co., LTD: 9.4A, 100V P-CHANNEL Power Mosfet

    Uploaded by

    boubker2bessai
    81 views6 pages

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    12P10.pdf

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    81 views6 pages

    Unisonic Technologies Co., LTD: 9.4A, 100V P-CHANNEL Power Mosfet

    Uploaded by

    boubker2bessai

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    UNISONIC TECHNOLOGIES CO.

    , LTD
    12P10 Power MOSFET

    9.4A, 100V P-CHANNEL


    POWER MOSFET

    „ DESCRIPTION
    The 12P10 uses advanced proprietary, planar stripe, DMOS
    technology to provide excellent RDS(ON), low gate charge and
    operation with low gate voltages. This device is suitable to be
    used in low voltage applications such as audio amplifier, high
    efficiency switching DC/DC converters, and DC motor control.
    „ FEATURES
    * RDS(ON) = 0.29Ω @VGS = -10 V
    * Low capacitance
    * Low gate charge
    * Fast switching capability
    * Avalanche energy specified
    „ SYMBOL
    2.Drain

    1.Gate

    3.Source

    „ ORDERING INFORMATION
    Ordering Number Pin Assignment
    Package Packing
    Lead Free Halogen Free 1 2 3
    12P10L-TM3-T 12P10G-TM3-T TO-251 G D S Tube
    12P10L-TN3-R 12P10G-TN3-R TO-252 G D S Tape Reel
    12P10L-TQ2-R 12P10G-TQ2-R TO-263 G D S Tape Reel
    12P10L-TQ2-T 12P10G-TQ2-T TO-263 G D S Tube

    www.unisonic.com.tw 1 of 6
    Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-262.B
    12P10 Power MOSFET

    „ ABSOLUTE MAXIMUM RATINGS (Tc=25℃, unless otherwise specified)


    PARAMETER SYMBOL RATINGS UNIT
    Drain-Source Voltage VDSS -100 V
    Gate-Source Voltage VGSS ±30 V
    Continuous Drain Current ID -9.4 A
    Pulsed Drain Current (Note 2) IDM -37.6 A
    Avalanche Current (Note 2) IAR -9.4 A
    Single Pulsed Avalanche Energy (Note 3) EAS 370 mJ
    Repetitive Avalanche Energy (Note 2) EAR 5.0 mJ
    Peak Diode Recovery dv/dt (Note 4) dv/dt -6.0 V/ns
    TO-251/ TO-252 50
    Power Dissipation PD W
    TO-263 65
    Junction Temperature TJ +150 ℃
    Storage Temperature TSTG -55 ~ +150 ℃
    Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
    Absolute maximum ratings are stress ratings only and functional device operation is not implied.
    2. Pulse width limited by TJ(MAX)
    3. L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C
    4. ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C
    „ THERMAL DATA
    PARAMETER SYMBOL RATINGS UNIT
    TO-251/ TO-252 110
    Junction to Ambient θJA ℃/W
    TO-263 62.5
    TO-251/ TO-252 2.5
    Junction to Case θJC ℃/W
    TO-263 2.31

    UNISONIC TECHNOLOGIES CO., LTD 2 of 6


    www.unisonic.com.tw QW-R502-262.B
    12P10 Power MOSFET

    „ ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)


    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    OFF CHARACTERISTICS
    Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=-250µA -100 V
    Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=-250µA,Referenced to 25°C -0.1 V/°C
    Drain-Source Leakage Current IDSS VDS=-100V, VGS=0V -1 µA
    Gate-Source Leakage Current IGSS VDS=0V, VGS=±30V ±100 nA
    ON CHARACTERISTICS
    Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA -2.0 -4.0 V
    Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-4.7A 0.24 0.29 Ω
    Forward Transconductance gFS VDS =-40V, ID=-4.7A (Note 1) 6.3 S
    DYNAMIC PARAMETERS
    Input Capacitance CISS 620 800 pF
    Output Capacitance COSS VDS=-25V, VGS=0V, f=1.0MHz 220 290 pF
    Reverse Transfer Capacitance CRSS 65 85 pF
    SWITCHING PARAMETERS
    Total Gate Charge QG 21 27 nC
    VDS=-80V, ID=-11.5A,
    Gate Source Charge QGS 4.6 nC
    VGS=-10V(Note 1, 2)
    Gate Drain Charge QGD 11.5 nC
    Turn-ON Delay Time tD(ON) 15 40 ns
    Turn-ON Rise Time tR VDD=-50V, ID=-11.5A, 160 330 ns
    Turn-OFF Delay Time tD(OFF) RG=25Ω(Note 1, 2) 35 80 ns
    Turn-OFF Fall-Time tF 60 130 ns
    SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
    Diode Forward Voltage VSD VGS=0V, IS=-9.4A -4.0 V
    Maximum Body-Diode Continuous Current IS -9.4 A
    Maximum Pulsed Drain-Source Diode
    ISM -37.6 A
    Forward Current
    Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
    Note: 2. Essentially independent of operating temperature

    UNISONIC TECHNOLOGIES CO., LTD 3 of 6


    www.unisonic.com.tw QW-R502-262.B
    12P10 Power MOSFET

    „ TEST CIRCUITS AND WAVEFORMS

    D.U.T. +

    VDS

    - L

    RG
    Compliment of D.U.T.
    (N-Channel) VDD

    VGS * dv/dt controlled by RG


    * ISD controlled by pulse period

    Peak Diode Recovery dv/dt Test Circuit

    VGS Period P. W.
    D=
    (Driver) P.W. Period

    VGS= 10V

    IFM, Body Diode Forward Current


    ISD IRM
    (D.U.T.)

    di/dt

    Body Diode Reverse Current

    VDS
    (D.U.T.)

    VDD

    Body Diode Recovery dv/dt

    Body Diode Forward Voltage Drop


    Peak Diode Recovery dv/dt Waveforms

    UNISONIC TECHNOLOGIES CO., LTD 4 of 6


    www.unisonic.com.tw QW-R502-262.B
    12P10 Power MOSFET

    „ TEST CIRCUITS AND WAVEFORMS (Cont.)

    Switching Test Circuit Switching Waveforms

    VGS
    Same Type
    50kΩ as D.U.T.
    QG
    12V -10V
    0.2μF 0.3μF
    VDS
    QGS QGD
    VGS

    DUT

    -3mA

    Charge
    Gate Charge Test Circuit Gate Charge Waveform

    Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

    UNISONIC TECHNOLOGIES CO., LTD 5 of 6


    www.unisonic.com.tw QW-R502-262.B
    12P10 Power MOSFET

    „ TYPICAL CHARACTERISTICS

    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
    other parameters) listed in products specifications of any and all UTC products described or contained
    herein. UTC products are not designed for use in life support appliances, devices or systems where
    malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
    whole or in part is prohibited without the prior written consent of the copyright owner. The information
    presented in this document does not form part of any quotation or contract, is believed to be accurate
    and reliable and may be changed without notice.

    UNISONIC TECHNOLOGIES CO., LTD 6 of 6


    www.unisonic.com.tw QW-R502-262.B

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