11N65(F,B,H)S

11 Amps,650 Volts N-Channel Super Junction Power MOSFET

FEATURE
 11A,650V,RDS(ON)MAX=0.36Ω@V GS=10V/5.5A
 Low gate charge
 Low Ciss
 Fast switching
 100% avalanche tested TO-220AB ITO-220AB

 Improved dv/dt capability 11N65S 11N65FS

TO-263 TO-262 \
11N65BS 11N65HS

Absolute Maximum Ratings(TC=25℃,unless otherwise noted)

Parameter Symbol 11N65(F,B,H)S UNIT

Drain-Source Voltage VDSS 650

V
Gate-Source Voltage VGSS ±30
Continuous Drain Current ID 11
A
Pulsed Drain Current(Note1) IDM 33
Single Pulse Avalanche Energy (Note 2) EAS 280 mJ
Avalanche Current(Note1) IAR 5.5 A
Repetitive Avalanche Energy (Note1) EAR 0.5 mJ
Reverse Diode dV/dt (Note 3) dv/dt 15 V/ns
Operating Junction and Storage Temperature Range TJ,T STG -55 to +150 ℃
Maximum lead temperature for soldering purposes,
TL 260 ℃
1/8"from case for 5 seconds
10 lbf·in
Mounting Torque 6-32 or M3 screw
1.1 N·m

Thermal Characteristics
Parameter Symbol ITO-220 TO-220 TO-262/263 Units
Thermal resistance , Junction to Case Rth(J-c) 3.82 1.03 1.03 ℃/W
Thermal resistance , Channel to Case Rth(ch-c) 3.82 1.03 1.03 ℃/W
Thermal resistance , Channel to Ambient Rth(ch-a) 80 62 62 ℃/W
Maximum Power Dissipation TC=25℃ PD 32.7 121 121 W

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Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 600 － － V
Breakdown Temperature Coefficient ΔBVDSS Reference to 25℃，
－ 0.6 － V/℃
/ΔTJ ID=250uA
Zero Gate Voltage Drain Current IDSS VDS=650V,VGS=0V － － 1 μA
Gate-Body Leakage Current,Forward IGSSF VGS=30V,VDS=0V － － 1 μA
Gate-Body Leakage Current,Reverse IGSSR VGS=-30V,VDS=0V － － -1 μA
On Characteristics
Gate-Source Threshold Voltage VGS(th) VDS=V GS,ID=250uA 2 － 4 V
Drain-Source On-State Resistance RDS(on) VGS=10V,ID=5.5A － 0.30 0.36 Ω
Dynamic Characteristics
Input Capacitance Ciss VDS=50V,VGS=0V, － 1030 － pF
Output Capacitance Coss f=1.0MHZ － 87 － pF
Reverse Transfer Capacitance Crss － 4.5 － pF

Switching Characteristics

Turn-On Delay Time td(on) VDD=380V,ID=5.5A, － 9 － ns

Turn-On Rise Time tr RG=6.8Ω － 4 － ns
Turn-Off Delay Time td(off) (Note4,5) － 40 － ns
Turn-Off Fall Time tf － 4.5 － ns
Total Gate Charge Qg VDS=480V,ID=11A, － 23 － nC
Gate-Source Charge Qgs VGS=10V, (Note4,5) － 5.7 － nC
Gate-Drain Charge Qgd － 8.0 － nC
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current IS － － 11 A
Pulsed Diode Forward Current ISM － － 33 A
Diode Forward Voltage VSD IS=11A,VGS=0V － － 1.3 V
Reverse Recovery Time trr VGS=0V,IS=11A, － 245 － ns
Reverse Recovery Charge Qrr dIF/dt=100A/us, (Note4) － 2.4 － μC
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,L=4.6mH,R g=25Ω,IAS=11A ,starling TJ=25℃.
3. ISD≤ID,dI/dt=200A/us,V DD≤BVDSS ,starting TJ=25℃.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.

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TEST CIRCUIT AND WAVEFORM

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Version1.0-2015.2 www.perfectway.cn
RATINGAND CHARACTERISTIC CURVES

30 24
15V TO P
14V

VGS,Gate-to-Source Voltage(V)
ID,Drain-to-Source Current(A)

25 13V 20
12V
11V 8V
10V 16
20 9V
T J =25℃

0V
15 12

48
7V

S=
D
V
10 8
6V

5 4
5V

0 0
0 5 10 15 20 25 30 0 10 20 30 40 50 60
V D S ,D rain-to-S ource V oltage(V ) Q g ,T otal G ate C harge(nC)

100 10000
ISD , Reverse Drain Current(A)

C iss
1000
T J =150℃ T J =25℃
Capacitance(pF)

10 V G S = 0 V ,f = 1M H z
C iss = C g s C g d ,C d s Shorted
C oss C rss = C g d
100
C oss = C ds + C gd

1
10 C rss

V G S =0 V
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 100 200 300 400 500 600
V D S ,S ource-D rain V oltage(V ) V D S ,D rain-to-S ource V oltage(V )

800 3.0
I D =5.5 A
On Resistance (Normalized)

750 2.5
RDS(on),Drain-to-Source
Brakdown Voltage(V)
VDS , Drain-to-Source

700 2.0

650 1.5

V G S =10 V
600 1.0

550 0.5

500 0
-60 -40 -20 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
T J , Junction Tem perature( ℃ ) T J , Junction Tem perature( ℃ )

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 Operation in this Area 10
Common Source
Limited by R DS(on) IDM =Limited
100 Tc=25 ℃
Pulse Test

RDS(ON) , Rrain-Source
ID, Drain Current(A)

On-Resistance (Ω)
10
V GS =10V
Limited by R DS(on) 1
1 100 μ s
1ms

0.1 T C =25 ℃ 10ms

T J=150 ℃
Single Pulse BVDSS Limited
0.01 0.1
1 10 100 1000 0.1 1 10 100
V DS ,Drain-to-Source Voltage(V) ID , Drain Current(V)

500 5

VTH , Gate Threshold Voltage(V)

EAS , Avalanche Energy(mJ)

400 4

300 3

200 2

Common Source
100 1 V DS =10V
ID =250uA
Pulse Test
0 0
25 50 75 100 125 150 -80 -40 0 40 80 120 140
T C H , Channel Temperature(Initial) ( ℃ ) T C , Case Temperature( ℃ )

1
Duty Cycle = 0.5
Transient Thermal Impedance
Nomalized Effective

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
0.0001 0.001 0.01 0.1 1 10
Pulse Time(s)

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PACKAGE OUTLINE DIMENSIONS

TO-220AB

TO-220AB
L
Dim Min Max
I
A .573(14.55) .603(15.32)
C B ―― .412(10.5)
H
C .103(2.62) .113(2.87)
G A D .140(3.56) .160(4.06)
E .510(13.0) .560(14.3)
F .027(0.68) .037(0.94)
PIN 1 2 3
G .148(3.74) .154(3.91)
H .230(5.84) .270(6.86)
D I .175(4.44) .185(4.86)
E
J .100(2.54) .110(2.79)
J
F K .014(0.35) .025(0.64)
L .045(1.14) .055(1.40)
P .095(2.41) .105(2.67)

ITO-220AB

B L ITO-220AB
G I Dim Min Max
A .571(14.5) .610(15.5)
C
H B .383(9.72) .406(10.3)
C .110(2.80) .126(3.20)
A D .133(3.38) .162(4.10)
E .512(13.0) .551(14.0)
PIN 1 2 3 F .028(0.70) .035(0.90)
G .114(2.90) .138(3.50)
H .268(6.80) .291(7.40)
D
E I .162(4.10) .185(4.70)
J J .102(2.60) .110(2.80)
F K .018(0.45) .026(0.65)
L .097(2.46) .113(2.86)
P K
P .890(2.25) .113(2.85)

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 TO-263

L TO-263
B Dim Min Max
C I A .323(8.20) .348(8.85)
2
B .394(10.0) .413(10.5)
.394(10.0) .402(10.2)
H C
D .077(1.95) .100(2.55)
A
E .204(5.17) .227(5.77)
PIN1 3 F .027(0.68) .037(0.94)

D J G -- .067(1.70)
E M H .046(1.17) .053(1.34)
G I .175(4.44) .191(4.86)
K J .100(2.54) .110(2.79)
F
K .014(0.35) .025(0.64)
P
L .047(1.20) .055(1.40)
M .000(0.00) .010(0.25)
P .095(2.41) .105(2.67)

Dimensions in inches and (millimeters)

TO-262

B L
C I TO-262
Dim Min Max
A .323(8.20) .348(8.85)
H B .394(10.0) .413(10.5)
A C .394(10.0) .402(10.2)
PIN 1 2 3 D .140(3.56) .160(4.06)
E .510(13.0) .560(14.3)
F .027(0.68) .037(0.94)
D H .046(1.17) .053(1.34)
E
I .175(4.44) .185(4.86)
J J .100(2.54) .110(2.79)
F K .014(0.35) .025(0.64)
L .045(1.14) .055(1.40)
P K
P .095(2.41) .105(2.67)

Dimensions in inches and (millimeters)

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