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com NCE3065Q
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3065Q uses advanced trench technology and design General Features
to provide excellent RDS(ON) with low gate charge. It can be ● VDS =30V,ID =65
used in a wide variety of applications. RDS(ON)=4.5mΩ (typical) @ VGS=10V
Application RDS(ON)=6.5mΩ (typical) @ VGS=4.5V
● DC/DC Converter ● High density cell design for ultra low Rdson
● Ideal for high-frequency switching and synchronous ● Very low on-resistance RDS(on)
rectification ● Good stability and uniformity with high EAS
100% UIS TESTED! ● 150 °C operating temperature
100% ∆Vds TESTED! ● Pb-free lead plating

DFN 3.3X3.3

Top View Bottom View Schematic Diagram

Package Marking and Ordering Information

Device Marking Device Device Package Reel Size Tape width Quantity
NCE3065Q NCE3065Q DFN 3.3X3.3-8L - - -

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 65 A
Drain Current-Continuous(TC=100℃) ID (100℃) 46 A
Pulsed Drain Current IDM 260 A
Maximum Power Dissipation PD 45 W
Derating factor 0.36 W/℃
(Note 5)
Single pulse avalanche energy EAS 150 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2) RθJC 2.8 ℃/W

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Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 - - V
Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
(Note 3)
On Characteristics
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.5 2.2 V
VGS=10V, ID=20A - 4.5 6.0
Drain-Source On-State Resistance RDS(ON) mΩ
VGS=4.5V, ID=20A - 6.5 8.5
Forward Transconductance gFS VDS=5V,ID=20A 30 - - S
(Note4)
Dynamic Characteristics
Input Capacitance Clss - 1784 - PF
VDS=15V,VGS=0V,
Output Capacitance Coss - 266 - PF
F=1.0MHz
Reverse Transfer Capacitance Crss - 212 - PF
(Note 4)
Switching Characteristics
Turn-on Delay Time td(on) - 7 - nS
Turn-on Rise Time tr VDD=5V,ID=20A - 6 - nS
Turn-Off Delay Time td(off) VGS=10V,RGEN=6Ω - 30 - nS
Turn-Off Fall Time tf - 8 - nS
Total Gate Charge Qg - 38.4 - nC
VDS=15V,ID=20A,
Gate-Source Charge Qgs - 5.8 - nC
VGS=10V
Gate-Drain Charge Qgd - 7.9 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=20A - 0.85 1.2 V
(Note 2)
Diode Forward Current IS - - 65 A
Reverse Recovery Time trr TJ = 25°C, IF = 20A - - 47 nS
(Note3)
Reverse Recovery Charge Qrr di/dt = 100A/μs - - 25 nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω

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Test Circuit
1) EAS Test Circuits

2) Gate Charge Test Circuit

3) Switch Time Test Circuit

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Typical Electrical and Thermal Characteristics (Curves)

Normalized On-Resistance
ID- Drain Current (A)

Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)

Vgs Gate-Source Voltage (V) Qg Gate Charge (nC)

Figure 2 Transfer Characteristics Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance (ｍΩ)

ID- Drain Current (A) Vsd Source-Drain Voltage (V)

Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward

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Power Dissipation (W)

Capacitance (pF)

Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 7 Capacitance vs Vds Figure 9 Power De-rating
ID- Drain Current (A)

ID- Drain Current (A)

Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 8 Safe Operation Area Figure 10 Current De-rating
Transient Thermal Impedance
r(t),Normalized Effective

Square Wave Pluse Duration(sec)

Figure 11 Normalized Maximum Transient Thermal Impedance

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DFN3.3X3.3-8L Package Information

Dimensions In Millimeters
Symbol
Min. Nom. Max.
A 0.70 0.75 0.80
b 0.25 0.30 0.35
c 0.10 0.15 0.25
D 3.25 3.35 3.45
D1 3.00 3.10 3.20
D2 1.48 1.58 1.68
D3 - 0.13 -
E 3.20 3.30 3.40
E1 3.00 3.15 3.20
E2 2.39 2.49 2.59
e 0.65BSC
H 0.30 0.39 0.50
L 0.30 0.40 0.50
L1 - 0.13 -
M * * 0.15

。 。
θ 10 12

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Attention

■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
■ NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
■ Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
■ NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
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■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
■ This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.

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