LTC8205A

LTC8205A
Dual N-Channel 20V Power MOSFET
BVDSS=20V ,
RDS(ON)=24.5mΩ
Features: ID=6A
• Super high dense cell design for low RDS(ON)
• Rugged and reliable
• Surface Mount Package
•
Application
•DC-DC converters
•Power management in portable and
Battery-powered products
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGS ±10 V
Continuous Drain Current (1) ID 6 A
Pulsed Drain Current (1), (2) IDM 20 A
TA=25℃ 0.83
Power Dissipation (1) PD W
TA=100℃ 0.3
Operating Junction and Storage Temperature Range TJ, Tstg -55 to150 ℃
Thermal Characteristics
Symbol Characteris Typ Max. Units
RθJA* Junction-to-Ambient -- 150 ℃ /W
Notes ：
(1). Surface Mounted on 1 in2 pad area, t ≤ 10 sec
(2). Pulse width ≤ 300 µs, duty cycle ≤ 2 %
Rev.2, Feb. 2014

LTC8205A
Electrical Characteristics (TA =25℃Unless Otherwise Specified)
Symbol Parameter Test Condition Min. Typ. Max. Unit
STATIC
BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250µA 20 -- -- V
VGS(th) Gate Threshold Voltage VDS=VGS,ID=250µA 0.5 0.7 1 V
IGSS Gate-Body Leakage VGS=±10V -- -- ±0.1 uA
IDSS Zero Gate Voltage Drain Current VDS=16V,VGS=0V -- -- 1 µA
RDS(ON) Drain-Source On-Resistance VGS=4.5V,ID=6A 18 22 24.5 mΩ
RDS(ON) Drain-Source On-Resistance VGS=2.5V,ID=5A -- 28 38 mΩ
DYNAMIC
Qg Total Gate Charge VDS = 10V, ID = 6A, -- 9 --
VGS = 4.5V
Qgs Gate-Source Charge -- 0.95 -- nC
Qgd Gate-Drain Charge -- 4 --
Ciss Input Capacitance VDS = 10V, VGS = 0V, -- 490 --
f = 1.0MHz
Coss Output Capacitance -- 81 -- PF
Crss Reverse Transfer Capacitance -- 67 --
td(on) Turn-On Delay Time VDS = 10 V, VGEN = 4.5 V -- 2.6 --
RG = 6 Ω, RL = 10 Ω,
tr Turn-On Rise Time IDS = 1 A -- 27 --
ns
td(off) Turn-Off Delay Time -- 25 --
tr Turn-Off Fall Time -- 20 --
Source-Drain Diode Ratings and Characteristics

Symbol Characteristic Min. Typ. Max. Unit Test Condition
Continuous Source current s Integral reverse PN diode in The
IS -- -- 1
A
ISM Pulsed Source Current -- -- 4 MOSFET
VSD Diode Forward voltage -- 0.7 1.3 V IS=1A,VGS=0V
Rev.2, Feb. 2014

LTC8205A
Power Dissipation Drain Current
ID – Drain Current (A)

PTOT – Power (W)
TJ – Junction Temperature (℃) TJ – Junction Temperature (℃)
Safe Operation Area Thermal Transient Impedance

Normalized Effective Transient
ID – Drain Current (A)
VDS – Drain-Source Voltage (V) Square Wave Pulse Duration (sec)
Rev.2, Feb. 2014

LTC8205A
Output Characteristics Drain-Source On Resistance
RDS(ON) - On Resistance (Ω)

ID - Drain Current (A)
VDS- Drain-Source Voltage (V) ID - Drain Current (A)
Transfer Characteristics Gate Threshold Voltage

Normalized Threshold Voltage
RDS(ON) - On Resistance (Ω)
VGS - Gate-Source Voltage (V) TJ – Junction Temperature (℃)
Rev.2, Feb. 2014

LTC8205A
Drain-Source On Resistance Source-Drain Diode Forward

Normalized On Resistance
IS – Source Current (A)
TJ – Junction Temperature (℃) VSD – Source-Drain Voltage (V)
Capacitance
Gate Charge
C – Capacitance (pF)
C – Capacitance (pF)
VDS – Drain-Source Voltage (V) QG – Gate Charge (nC)
Rev.2, Feb. 2014

LTC8205A
Test Circuit and Waveform
Rev.2, Feb. 2014

LTC8205A
Package Dimension
Rev.2, Feb. 2014

LTC8205A
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and specifications
at any time without notice. Customers should obtain and confirm the latest product
information and specifications before final design, purchase or use.
LSC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does LSC assume any liability for application assistance or
customer product design. LSC does not warrant or accept any liability with products which
are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of LSC.
LSC products are not authorized for use as critical components in life support devices or
systems without express written approval of LSC.
Rev.2, Feb. 2014

LTC8205A

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LTC8205A

Dual N-Channel 20V Power MOSFET

Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

Rev.2, Feb. 2014

Source-Drain Diode Ratings and Characteristics

VSD Diode Forward voltage -- 0.7 1.3 V IS=1A,VGS=0V

Rev.2, Feb. 2014

Power Dissipation Drain Current

ID – Drain Current (A)

TJ – Junction Temperature (℃) TJ – Junction Temperature (℃)

Safe Operation Area Thermal Transient Impedance

VDS – Drain-Source Voltage (V) Square Wave Pulse Duration (sec)

Rev.2, Feb. 2014

Output Characteristics Drain-Source On Resistance

RDS(ON) - On Resistance (Ω)

VDS- Drain-Source Voltage (V) ID - Drain Current (A)

Transfer Characteristics Gate Threshold Voltage

VGS - Gate-Source Voltage (V) TJ – Junction Temperature (℃)

Rev.2, Feb. 2014

Drain-Source On Resistance Source-Drain Diode Forward

IS – Source Current (A)

TJ – Junction Temperature (℃) VSD – Source-Drain Voltage (V)

VDS – Drain-Source Voltage (V) QG – Gate Charge (nC)

Rev.2, Feb. 2014

Rev.2, Feb. 2014

Rev.2, Feb. 2014

Important Notice and Disclaimer

Rev.2, Feb. 2014

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