AP70L02GS/P

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Low On-resistance D BVDSS 25V

▼ Simple Drive Requirement RDS(ON) 9mΩ
▼ Fast Switching ID 66A
G
S

Description
The Advanced Power MOSFETs from APEC provide the designer G D
with the best combination of fast switching, ruggedized device S TO-263(S)
design, low on-resistance and cost-effectiveness.

The TO-263 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70L02GP) is available for low-profile applications.
G
D TO-220(P)
S
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 25 V
VGS Gate-Source Voltage ±20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 66 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 42 A
1
IDM Pulsed Drain Current 210 A
PD@TC=25℃ Total Power Dissipation 66 W
Linear Derating Factor 0.53 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-case Thermal Resistance Junction-case Max. 1.9 ℃/W
Rthj-amb Thermal Resistance Junction-ambient Max. 62 ℃/W

Data & specifications subject to change without notice 200831073-1/6

AP70L02GS/P

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 25 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=33A - - 9 mΩ
VGS=4.5V, ID=20A - - 18 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=33A - 25 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=25V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=150 C) VDS=20V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=± 20V - - ±100 nA
2
Qg Total Gate Charge ID=33A - 23 nC
Qgs Gate-Source Charge VDS=20V - 3 nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 17 nC
2
td(on) Turn-on Delay Time VDS=15V - 8.8 - ns
tr Rise Time ID=33A - 95 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 24 - ns
tf Fall Time RD=0.45Ω - 14 - ns
Ciss Input Capacitance VGS=0V - 790 - pF
Coss Output Capacitance VDS=25V - 475 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 195 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.26V - - 66 A
1
ISM Pulsed Source Current ( Body Diode ) - - 210 A
2
VSD Forward On Voltage Tj=25℃, IS=66A, VGS=0V - - 1.26 V

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

2/6
 AP70L02GS/P

250 140

V G =10V V G =10V
T C =25 o C T C =150 o C
V G =8.0V 120 V G =8.0V
200
V G =6.0V
100

ID , Drain Current (A)

ID , Drain Current (A)

150
80
V G =6.0V V G =5.0V
60
100

V G =5.0V
40 V G =4.0V
50
V G =4.0V 20

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

23 1.8

21 I D =10A I D =10A
T c =25 ℃ 1.6
V G =10V
19

17 1.4
Normalized R DS(ON)
RDS(ON) (mΩ)

15
1.2

13

11 1

9
0.8

5 0.6

2 3 4 5 6 7 8 9 10 11 -50 0 50 100 150

V GS (V) o
T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

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AP70L02GS/P

80 80

70 70

60 60
ID , Drain Current (A)

50 50

PD (W)
40 40

30 30

20 20

10 10

0 0
25 50 75 100 125 150 0 50 100 150

o
T c , Case Temperature ( C) T c ,Case Temperature ( o C)

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation

Case Temperature

1000 1

DUTY=0.5
Normalized Thermal Response (R thjc)

100 0.2

10us
0.1
ID (A)

0.05
0.1

100us 0.02

0.01 SINGLE PULSE PDM

10 t
1ms T

10ms
T c =25 o C Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
Single Pulse 100ms

1 0.01
1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS (V) t , Pulse Width (s)

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

4/6
 AP70L02GS/P

16 10000
f=1.0MHz

14 I D =33A
V DS =20V
VGS , Gate to Source Voltage (V)

12

10

C (pF)
8 1000
Ciss
6 Coss

Crss
2

0 100
0 5 10 15 20 25 30 35 40 45 50 1 6 11 16 21 26 31

V DS (V)
Q G , Total Gate Charge (nC)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

100 3

10 2
VGS(th) (V)

T j =150 o C T j =25 o C
IS(A)

1 1

0.1 0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150

V SD (V) T j , Junction Temperature( o

C)

Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature

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AP70L02GS/P

VDS
RD 90%

VDS TO THE
D OSCILLOSCOPE

0.6 x RATED VDS

RG G
10%
+ S
10 V
VGS
VGS
-

td(on) tr td(off) tf

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

VG

VDS
TO THE QG
D OSCILLOSCOPE
5V
0.8 x RATED VDS
G QGS QGD

S VGS
+
1~ 3 mA
-
IG ID

Charge Q

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

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 ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-263

E
SYMBOLS Millimeters
MIN NOM MAX
A 4.25 4.75 5.20
A1 0.00 0.15 0.30
A2 2.20 2.45 2.70
D b 0.70 0.90 1.10
b1 1.07 1.27 1.47
c 0.30 0.45 0.60
c1 1.15 1.30 1.45
L2 b1 D 8.30 8.90 9.40
L3 E 9.70 10.10 10.50
e 2.04 2.54 3.04
b
L2 ----- 1.50 -----
L3 4.50 4.90 5.30

e L4 L4 ----- 1.50 ----

A
A2 1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.

c θ
c1
A1

Part Marking Information & Packing : TO-263

Part Number
Package Code
XXXXXS
70L02GS
meet Rohs requirement
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-220

E1
E A
SYMBOLS Millimeters
φ L1 MIN NOM MAX
L2 A 4.25 4.48 4.70
L5 b 0.65 0.80 0.90
c1
b1 1.15 1.38 1.60
c 0.40 0.50 0.60
c1 1.00 1.20 1.40
E 9.70 10.00 10.40
D E1 --- --- 11.50
L4 e ---- 2.54 ----
L 12.70 13.60 14.50
L1 2.60 2.80 3.00
b1 L2 1.00 1.40 1.80
L3 L3 2.6 3.10 3.6
L4 14.70 15.50 16
L5 6.30 6.50 6.70
L
φ 3.50 3.60 3.70
D 8.40 8.90 9.40

b c
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-220

Part Number
Package Code
70L02GP
LOGO meet Rohs requirement
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence