This document provides specifications for an N-channel power MOSFET transistor. It details maximum ratings, electrical characteristics, thermal characteristics and diagrams. Key specifications include a drain-source breakdown voltage of 55V, on-resistance of 7.2mΩ, continuous drain current of 110A, and operating junction temperature range of -55°C to +175°C.
This document provides specifications for an N-channel power MOSFET transistor. It details maximum ratings, electrical characteristics, thermal characteristics and diagrams. Key specifications include a drain-source breakdown voltage of 55V, on-resistance of 7.2mΩ, continuous drain current of 110A, and operating junction temperature range of -55°C to +175°C.
This document provides specifications for an N-channel power MOSFET transistor. It details maximum ratings, electrical characteristics, thermal characteristics and diagrams. Key specifications include a drain-source breakdown voltage of 55V, on-resistance of 7.2mΩ, continuous drain current of 110A, and operating junction temperature range of -55°C to +175°C.
This document provides specifications for an N-channel power MOSFET transistor. It details maximum ratings, electrical characteristics, thermal characteristics and diagrams. Key specifications include a drain-source breakdown voltage of 55V, on-resistance of 7.2mΩ, continuous drain current of 110A, and operating junction temperature range of -55°C to +175°C.
Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
Description These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Absolute Max Rating
Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 110 ID @ TC = 100°C Continuous Drain Current, VGS@ 10V① 83 A IDM Pulsed Drain Current② 440 Power Dissipation③ 200 W PD @TC = 25°C Linear Derating Factor 1.3 W/°C VDS Drain-Source Voltage 55 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.3mH 576 mJ IAS Avalanche Current @ L=0.3mH 62 A TJ TSTG Operating Junction and Storage Temperature Range -55 to +175 °C
Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 55 — — V VGS = 0V, ID = 250μA — 7.2 8 VGS=10V,ID =62A RDS(on) Static Drain-to-Source on-resistance mΩ — 12.7 — TJ = 125℃ 2 — 4 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage V — 2.2 — TJ = 125℃ — — 1 VDS = 55V,VGS = 0V IDSS Drain-to-Source leakage current μA — — 50 TJ = 125°C — — 100 VGS =20V IGSS Gate-to-Source forward leakage nA — — -100 VGS = -20V Qg Total gate charge — 61.4 — ID = 62A, Qgs Gate-to-Source charge — 17.2 — nC VDS=44V, Qgd Gate-to-Drain("Miller") charge — 24.4 — VGS = 10V td(on) Turn-on delay time — 16.2 — VGS=10V, VDD=29.1V, tr Rise time — 90.0 — RL=0.47Ω, ns td(off) Turn-Off delay time — 33.8 — RGEN=4.5Ω tf Fall time — 18.3 — ID=62A Ciss Input capacitance — 3014 — VGS = 0V Coss Output capacitance — 721 — pF VDS = 25V Crss Reverse transfer capacitance — 113 — ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol IS — — 110 A (Body Diode) showing the Pulsed Source Current integral reverse ISM — — 440 A (Body Diode) p-n junction diode. VSD Diode Forward Voltage — 0.88 1.5 V IS=62A, VGS=0V, TJ = 25°C trr Reverse Recovery Time — 42 — ns TJ = 25°C, IF =62A, di/dt = Qrr Reverse Recovery Charge — 62 — nC 100A/μs
www.silikron.com SSPL5508 Test circuits and Waveforms EAS Test Circuit Gate charge test circuit
Switching Time Test Circuit Switching Waveforms
Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C
High Tj=150℃ @ 80% of 168 hours 3 lots x 77 devices Temperature Max VDSS/VCES/VR 500 hours Reverse 1000 hours Bias(HTRB) High Tj=150℃ @ 100% of 168 hours 3 lots x 77 devices Temperature Max VGSS 500 hours Gate 1000 hours Bias(HTGB)
www.silikron.com SSPL5508 ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use.
Customer Service Worldwide Sales and Service: Sales@silikron.com Technical Support: Technical@silikron.com Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: Sales@silikron.com
