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    100V N-Channel Mosfets: General Description

    Uploaded by

    Marius
    This document describes a 100V N-channel MOSFET from Potens Semiconductor Corp. It has a maximum drain-source voltage of 100V, continuous drain current of 150A, and on-resistance of 4.2mΩ. The MOSFET uses trench DMOS technology to minimize resistance and withstand high pulse energies. It is well-suited for applications requiring high efficiency fast switching such as networking equipment, LED lighting, and quick chargers.

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    100V N-Channel Mosfets: General Description

    Uploaded by

    Marius
    76 views5 pages
    This document describes a 100V N-channel MOSFET from Potens Semiconductor Corp. It has a maximum drain-source voltage of 100V, continuous drain current of 150A, and on-resistance of 4.2mΩ. The MOSFET uses trench DMOS technology to minimize resistance and withstand high pulse energies. It is well-suited for applications requiring high efficiency fast switching such as networking equipment, LED lighting, and quick chargers.

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    PDP0980

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    This document describes a 100V N-channel MOSFET from Potens Semiconductor Corp. It has a maximum drain-source voltage of 100V, continuous drain current of 150A, and on-resistance of 4.2mΩ. The MOSFET uses trench DMOS technology to minimize resistance and withstand high pulse energies. It is well-suited for applications requiring high efficiency fast switching such as networking equipment, LED lighting, and quick chargers.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    76 views5 pages

    100V N-Channel Mosfets: General Description

    Uploaded by

    Marius
    This document describes a 100V N-channel MOSFET from Potens Semiconductor Corp. It has a maximum drain-source voltage of 100V, continuous drain current of 150A, and on-resistance of 4.2mΩ. The MOSFET uses trench DMOS technology to minimize resistance and withstand high pulse energies. It is well-suited for applications requiring high efficiency fast switching such as networking equipment, LED lighting, and quick chargers.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    100V N-Channel MOSFETs PDP0980

    General Description
    BVDSS RDSON ID
    These N-Channel enhancement mode power field effect
    transistors are using trench DMOS technology. This 100V 4.2m 150A
    advanced technology has been especially tailored to
    minimize on-state resistance, provide superior switching Features
    performance, and withstand high energy pulse in the  100V,150A, RDS(ON) =4.2mΩ@VGS = 10V
    avalanche and commutation mode. These devices are  Improved dv/dt capability
    well suited for high efficiency fast switching applications.  Fast switching
     100% EAS Guaranteed
     Green Device Available
    TO220 Pin Configuration D Applications
     Networking
     Load Switch
     LED applications
    G
     Quick Charger

    S S
    GD

    Absolute Maximum Ratings Tc=25℃ unless otherwise noted

    Symbol Parameter Rating Units


    VDS Drain-Source Voltage 100 V
    VGS Gate-Source Voltage +20/-12 V
    Drain Current – Continuous (TC=25℃) 150 A
    ID
    Drain Current – Continuous (TC=100℃) 95 A
    IDM Drain Current – Pulsed1 600 A
    2
    EAS Single Pulse Avalanche Energy 378 mJ
    2
    IAS Single Pulse Avalanche Current 87 A
    Power Dissipation (TC=25℃) 275 W
    PD
    Power Dissipation – Derate above 25℃ 2.22 W/℃
    TSTG Storage Temperature Range -50 to 150 ℃
    TJ Operating Junction Temperature Range -50 to 150 ℃

    Thermal Characteristics

    Symbol Parameter Typ. Max. Unit


    RθJA Thermal Resistance Junction to ambient --- 62 ℃/W
    RθJC Thermal Resistance Junction to Case --- 0.45 ℃/W

    Potens semiconductor corp. Ver.1.03

    1
    100V N-Channel MOSFETs PDP0980

    Electrical Characteristics (TJ=25 ℃, unless otherwise noted)


    Off Characteristics
    Symbol Parameter Conditions Min. Typ. Max. Unit
    BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
    VDS=100V , VGS=0V , TJ=25℃ --- --- 1 uA
    IDSS Drain-Source Leakage Current
    VDS=80V , VGS=0V , TJ=85℃ --- --- 10 uA
    IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA

    On Characteristics
    VGS=10V , ID=20A --- 3.5 4.2 m
    RDS(ON) Static Drain-Source On-Resistance
    VGS=4.5V , ID=15A --- 4.5 6.0 m
    VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.5 V
    gfs Forward Transconductance VDS=10V , ID=3A --- 20 --- S

    Dynamic and switching Characteristics


    Qg Total Gate Charge3 , 4 --- 110 165
    Qgs Gate-Source Charge3 , 4 VDS=80V , VGS=10V , ID=10A --- 11.5 18 nC
    Qgd Gate-Drain Charge3 , 4 --- 28 42
    Td(on) Turn-On Delay Time3 , 4 --- 23 46
    Tr Rise Time3 , 4 VDD=50V , VGS=10V , RG=6 --- 32 64
    ns
    3,4 ID=1A
    Td(off) Turn-Off Delay Time --- 157 320
    Tf Fall Time3 , 4 --- 115 230
    Ciss Input Capacitance --- 6680 13300
    Coss Output Capacitance VDS=25V , VGS=0V , F=1MHz --- 1690 3380 pF
    Crss Reverse Transfer Capacitance --- 78 156
    Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.9 --- 

    Drain-Source Diode Characteristics and Maximum Ratings


    Symbol Parameter Conditions Min. Typ. Max. Unit
    IS Continuous Source Current --- --- 150 A
    VG=VD=0V , Force Current
    ISM Pulsed Source Current --- --- 300 A
    VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V
    Note :
    1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
    2. VDD=25V,VGS=10V,L=0.1mH,IAS=87A.,RG=25,Starting TJ=25℃.
    3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
    4. Essentially independent of operating temperature.

    Potens semiconductor corp. Ver.1.03

    2
    100V N-Channel MOSFETs PDP0980
    ID , Continuous Drain Current (A)

    Normalized On Resistance
    TC , Case Temperature (℃) TJ , Junction Temperature (℃)
    Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ
    Normalized Gate Threshold Voltage

    VGS , Gate to Source Voltage (V)

    TJ , Junction Temperature (℃) Qg , Gate Charge (nC)


    Fig.3 Normalized Vth vs. TJ Fig.4 Gate Charge Characteristics
    Normalized Thermal Response

    ID , Drain Current (A)

    Square Wave Pulse Duration (s) VDS , Drain to Source Voltage (V)
    Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area

    Potens semiconductor corp. Ver.1.03

    3
    100V N-Channel MOSFETs PDP0980
    VDS
    90%

    10%
    VGS
    Td(on) Tr Td(off) Tf

    Ton Toff

    Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

    Potens semiconductor corp. Ver.1.03

    4
    100V N-Channel MOSFETs PDP0980
    TO220 PACKAGE INFORMATION

    Dimensions In Millimeters Dimensions In Inches


    Symbol
    MAX MIN MAX MIN
    A 10.300 9.700 0.406 0.382
    A1 8.840 8.440 0.348 0.332
    A2 1.250 1.050 0.049 0.041
    A3 5.300 5.100 0.209 0.201
    B 16.200 15.400 0.638 0.606
    C 4.680 4.280 0.184 0.169
    C1 1.500 1.100 0.059 0.043
    D 1.000 0.600 0.039 0.024
    E 3.800 3.400 0.150 0.134
    G 9.300 8.700 0.366 0.343
    H 0.600 0.400 0.024 0.016
    K 2.700 2.100 0.106 0.083
    L 13.600 12.800 0.535 0.504
    M 1.500 1.100 0.059 0.043
    N 2.590 2.490 0.102 0.098
    T W0.35 W0.014
    DIA Φ1.5 TYP. deep0.2 TYP. Φ0.059 TYP. deep0.008 TYP.

    Potens semiconductor corp. Ver.1.03

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