AO4566

30V N-Channel MOSFET

General Description Product Summary

• Latest Trench Power AlphaMOS (αMOS LV) technology VDS 30V

• Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A
• Low Gate Charge RDS(ON) (at VGS=10V) < 11mΩ
• High Current Capability
RDS(ON) (at VGS=4.5V) < 17mΩ
• RoHS and Halogen-Free Compliant

Application 100% UIS Tested

100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial

SOIC-8

Top View Bottom View D

D
D
D
D

G G
S S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 12
ID
CurrentG TA=70°C 9.4 A
Pulsed Drain Current C IDM 48
Avalanche Current C IAS 15 A
Avalanche energy L=0.1mH C EAS 11 mJ
VDS Spike 100ns VSPIKE 36 V
TA=25°C 2.5
PD W
Power Dissipation B TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 42 50 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 70 85 °C/W
Maximum Junction-to-Lead Steady-State RθJL 20 30 °C/W

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.3 1.8 2.3 V
VGS=10V, ID=12A 9 11
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 12.5 15
VGS=4.5V, ID=10A 13.5 17 mΩ
gFS Forward Transconductance VDS=5V, ID=12A 45 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 1 V
IS Maximum Body-Diode Continuous Current 3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 542 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 233 pF
Crss Reverse Transfer Capacitance 31 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1 2 3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 9 12.2 nC
Qg(4.5V) Total Gate Charge 4.3 5.8 nC
VGS=10V, VDS=15V, ID=12A
Qgs Gate Source Charge 2.2 nC
Qgd Gate Drain Charge 1.7 nC
tD(on) Turn-On DelayTime 4 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.25Ω, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 18 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/µs 9.7 ns
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 11.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 50
10V 4.5V VDS=5V
4V
40 6V 40

30 30
3.5V
ID (A)

ID(A)
20 20 125°C

10 10 25°C
VGS=3.0V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

18 1.6

16 Normalized On-Resistance
VGS=4.5V
1.4 VGS=10V
14 ID=12A
Ω)
RDS(ON) (mΩ

12 17
1.2 5
10
2
8
1
10
VGS=4.5V
VGS=10V
ID=10A
6

4 0.8
0 3 6 9 12 15 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)

25 1.0E+01
ID=12A
1.0E+00
20
40
125°C 125°C
1.0E-01
Ω)

15
RDS(ON) (mΩ

IS (A)

1.0E-02
10
1.0E-03
25°C

5 25°C
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 800
VDS=15V
ID=12A
8 Ciss
600

Capacitance (pF)
VGS (Volts)

6
400
4 Coss

200
2

Crss
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

IDM limited
100.0 1000
TA=25°C
10µs

10.0
100µs 100
Power (W)
ID (Amps)

1ms
1.0
RDS(ON) @10V
10ms
limited
10

0.1
10s
TJ(Max)=150°C DC
TA=25°C 1
0.0
1E-05 0.001 0.1 10 1000
0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
* VGS > minimum VGS at which RDS(ON) is specified
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Ambient (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

1 RθJA=85°C/W

0.1

PD
0.01 Single Pulse
Ton
T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge

R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s

RL
V ds
Vds

90 %
DUT
+ Vdd
Vgs VDC

Rg - 1 0%

Vgs V gs t d (o n ) tr t d (o ff) tf

to n t o ff

D iode R ecovery T est C ircuit & W aveform s

V ds + Q rr = - Idt
DUT
V gs

t rr
V ds - L Isd IF
Isd dI/dt
+ V dd
I RM
V gs VD C
V dd
Ig
- V ds

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