AO4407A

30V P-Channel MOSFET

General Description Product Summary

The AO4407A uses advanced trench technology to VDS = -30V
provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V)
with a 25V gate rating. This device is suitable for use as RDS(ON) < 11m (VGS = -20V)
a load switch or in PWM applications. RDS(ON) < 13m (VGS = -10V)
RDS(ON) < 17m (VGS = -6V)

* RoHS and Halogen-Free Complaint 100% UIS Tested

100% Rg Tested

SOIC-8
D
Top View Bottom View
D
D
D
D

G G
S S
S
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 25 V
Continuous Drain TA=25C -12
Current A TA=70C ID -10
A
Pulsed Drain Current B IDM -60
Avalanche Current G IAR -26
G
Repetitive avalanche energy L=0.3mH EAR 101 mJ
TA=25C 3.1
Power Dissipation A PD W
TA=70C 2.0
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 32 40 C/W
RJA
Maximum Junction-to-Ambient A Steady State 60 75 C/W
Maximum Junction-to-Lead C Steady State RJL 17 24 C/W

Rev.11.0 June 2013 www.aosmd.com

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID = -250A, VGS = 0V -30 V
VDS = -30V, VGS = 0V -1
IDSS Zero Gate Voltage Drain Current A
TJ = 55C -5
IGSS Gate-Body leakage current VDS = 0V, VGS = 25V 100 nA
VGS(th) Gate Threshold Voltage VDS = VGS ID = -250A -1.7 -2.3 -3 V
ID(ON) On state drain current VGS = -10V, VDS = -5V -60 A
VGS = -20V, ID = -12A 8.5 11
TJ=125C 11.5 15
RDS(ON) Static Drain-Source On-Resistance m
VGS = -10V, ID = -12A 10 13
VGS = -6V, ID = -10A 12.7 17
gFS Forward Transconductance VDS = -5V, ID = -10A 21 S
VSD Diode Forward Voltage IS = -1A,VGS = 0V -0.7 -1 V
IS Maximum Body-Diode Continuous Current -3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2060 2600 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 370 pF
Crss Reverse Transfer Capacitance 295 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2.4 3.6
SWITCHING PARAMETERS
Qg Total Gate Charge 30 39 nC
Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-12A 4.6 nC
Qgd Gate Drain Charge 10 nC
tD(on) Turn-On DelayTime 11 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1.25, 9.4 ns
tD(off) Turn-Off DelayTime RGEN=3 24 ns
tf Turn-Off Fall Time 12 ns
trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/s 30 40 ns
Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/s 22 nC
A: The value of R JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.11.0 June 2013 www.aosmd.com

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
-10V VDS= -5V
-6V

60 -5V 60
-ID (A)

-ID(A)
40 -4.5V 40

-4V 125C
20 20
25C
VGS= -3.5V

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

20 1.8
VGS=-20V
On-Resistance

1.6 ID=-12A
15 VGS=-6V
)
RDS(ON) (m

1.4 VGS=-10V
Normalized On

10 ID=-12A
VGS=-10V
1.2 VGS=-6V
VGS=-20V ID=-10A
5
1.0

0 0.8
0 4 8 F=-6.5A, 16
I12 dI/dt=100A/s
20 0 25 50 75 100 125 150 175
-ID (A) Temperature (C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

30 1E+01
ID=-12A
1E+00
25
1E-01 125C
)
RDS(ON) (m

20
1E-02
-IS (A)

125
15 1E-03
25C
1E-04
10
25 1E-05
5
3 4 5 6 7 8 9 10 1E-06
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts)
Figure 6: Body-Diode Characteristics

Rev.11.0 June 2013 www.aosmd.com

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 3000

VDS=-15V 2500
8 Ciss
ID=-12A

Capacitance (pF)
2000
-VGS (Volts)

6
1500
4
1000 Coss

2
500
Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 10000
10s TJ(Max)=150C
TA=25C
10 100s 1000
Power (W)
-ID (Amps)

1ms
1 10ms 100
RDS(ON) limited
100mss

0.1 TJ(Max)=150C 10
10s
TA=25C
DC
0.01 1
0.1 1 10 100 0.00001 0.001 0.1 10 1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note E) to-Ambient (Note E)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JA Normalized Transient

TJ,PK=TA+PDM.ZJA.RJA
RJA=75C/W
Thermal Resistance

0.1
PD

0.01 Ton
Single Pulse T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

Rev.11.0 June 2013 www.aosmd.com

 G ate C harge Test C ircuit & W aveform
Vgs
Qg
- -10V
VD C
-
+ Vds Q gs Qgd
VD C
+
DUT
V gs

Ig

C harge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Rev.11.0 June 2013 www.aosmd.com