AO3404

30V N-Channel MOSFET

General Description Product Summary

The AO3404 uses advanced trench technology to provide VDS 30V

excellent RDS(ON) and low gate charge. This device may ID (at VGS=10V) 5A
be used as a load switch or in PWM applications. RDS(ON) (at VGS=10V) < 31mΩ
RDS(ON) (at VGS =4.5V) < 43mΩ

SOT23
Top View Bottom View D

D
D

G
S G

S
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 5
ID
Current TA=70°C 4 A
Pulsed Drain Current C IDM 20
TA=25°C 1.4
PD W
Power Dissipation B TA=70°C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 100 125 °C/W
Maximum Junction-to-Lead Steady-State RθJL 63 80 °C/W

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 AO3404

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 20 A
VGS=10V, ID=5A 25.5 31
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 41 50
VGS=4.5V, ID=4A 34 43 mΩ
gFS Forward Transconductance VDS=5V, ID=5A 15 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 1 V
IS Maximum Body-Diode Continuous Current 1.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 255 310 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 45 pF
Crss Reverse Transfer Capacitance 35 50 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.6 3.25 4.9 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 5.2 6.3 nC
Qg(4.5V) 2.55 3.2
VGS=10V, VDS=15V, ID=5A
Qgs Gate Source Charge 0.85 nC
Qgd Gate Drain Charge 1.3 nC
tD(on) Turn-On DelayTime 4.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=3Ω, 2.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 14.5 ns
tf Turn-Off Fall Time 3.5 ns
trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs 8.5 ns
Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 2.2 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO3404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 15
10V VDS=5V
7V
25 4.5V

20 10
4V
ID (A)

ID(A)
15
3.5V
10 5 125°C 25°C

5 VGS=3V

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

40 2

Normalized On-Resistance 1.8

35 VGS=10V
1.6 ID=5A
RDS(ON) (mΩ )

VGS=4.5V 17
30 1.4
5
1.2 2
VGS=4.5V10
25
ID=4A
VGS=10V 1

20 0.8
0 3 6 9 12 15 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction Temperature
18
Gate Voltage (Note E)
(Note E)

100 1.0E+02
ID=5A
1.0E+01
80 40
1.0E+00
RDS(ON) (mΩ )

1.0E-01
IS (A)

60 125°C
1.0E-02 125°C

1.0E-03 25°C
40
25°C 1.0E-04

20 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO3404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 400
VDS=15V
ID=5A 350
8
300 Ciss

Capacitance (pF)
250
VGS (Volts)

6
200
4 150

100 Coss
2
50
Crss
0 0
0 1 2 3 4 5 6 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 10000
TA=25°C

10.0 1000
RDS(ON) 10µs
ID (Amps)

limited
Power (W)

100µs
1.0 100
1ms
TJ(Max)=150°C 10ms
0.1 TA=25°C 10
10s
DC
0.0
1
0.01 0.1 1 10 100
0.00001 0.001 0.1 10 1000
VDS (Volts)
Pulse Width (s)
Figure 10: Maximum Forward Biased Safe Figure 11: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Ambient (Note F)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=125°C/W

0.1

0.01 PD

Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO3404

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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