Rev 4:Nov 2004

AOD414, AOD414L( Green Product )

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD414 uses advanced trench technology to VDS (V) = 30V

provide excellent RDS(ON), shoot-through immunity ID = 85A
and body diode characteristics. This device is ideally RDS(ON) < 5.2mΩ (VGS = 10V)
suited for use as a low side switch in CPU core RDS(ON) < 7.0mΩ (VGS = 4.5V)
power conversion. AOD414L ( Green Product ) is
offered in a lead-free package.

TO-252
D-PAK
D

Top View
Drain Connected
to Tab
G
S

G D S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
G
Continuous Drain TC=25°C 85
Current B,G TC=100°C B ID 73 A
Pulsed Drain Current IDM 200
Avalanche Current C IAR 30 A
C
Repetitive avalanche energy L=0.1mH EAR 140 mJ
TC=25°C 100
PD W
Power Dissipation B TC=100°C 50
TA=25°C 2.5
PDSM W
Power Dissipation A TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 14.2 20 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 40 50 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 0.56 1.5 °C/W

Alpha & Omega Semiconductor, Ltd.

AOD414, AOD414L

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, V GS=0V 0.005 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.4 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 110 A
VGS=10V, ID=20A 4.2 5.2
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 6 7.5
VGS=4.5V, ID=20A 5.6 7 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 85 S
VSD Diode Forward Voltage IS=1A,V GS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 85 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 6060 7000 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 638 pF
Crss Reverse Transfer Capacitance 355 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.45 0.6 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 96.4 115 nC
Qg(4.5V) Total Gate Charge 46.4 55 nC
VGS=4.5V, VDS=15V, ID=20A
Qgs Gate Source Charge 13.6 nC
Qgd Gate Drain Charge 15.6 nC
tD(on) Turn-On DelayTime 15.7 21 ns
tr Turn-On Rise Time VGS=10V, V DS=15V, R L=0.75Ω, 14.2 21 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 55.5 75 ns
tf Turn-Off Fall Time 14 21 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 31 38 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 24 29 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating TC=100°C
is limited by the package current capability.
TA=25°C

-55 to 175
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOD414, AOD414L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 60

50 10V
50 VDS=5V
4.5V
40 3.5V 40
125°C
ID(A)

ID(A)
30 30
VGS=3V

20 20 25°C

10 10

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

7.0 1.8
6.5
Normalized On-Resistance

1.6 ID=20A
6.0 VGS=4.5V
RDS(ON) (mΩ)

5.5
1.4 VGS=4.5V
5.0 VGS=10V
4.5 VGS=10V 1.2

4.0
1
3.5

3.0 0.8
0 20 40 60 80 100 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

12 1.0E+02

1.0E+01
10
ID=20A 1.0E+00
125°C
RDS(ON) (mΩ)

8 125°C 1.0E-01
IS (A)

TC=100°C
TA=25°C 1.0E-02
6
25°C 25°C
1.0E-03
-55 to 175
4
1.0E-04

2 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AOD414, AOD414L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8000
VDS=15V Ciss
ID=20A 7000
8
6000

Capacitance (pF)
VGS (Volts)

6 5000

4000
4
3000
Coss
2000 Crss
2
1000
0 0
0 20 40 60 80 100 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000
100
RDS(ON) TJ(Max)=150°C
limited TA=25°C
100 80
10ms 100µs
1ms
ID (Amps)

0.1s
Power (W)

60
10
1s
40
10s
1 TJ(Max)=150°C
TA=25°C 20
DC

0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Ambient (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=50°C/W
Thermal Resistance

TC=100°C
0.1
TA=25°C
PD
0.01 -55 to 175
Single Pulse Ton
T

0.001
0.00001 0.0001 0.001 0.010.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD414, AOD414L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 120
ID(A), Peak Avalanche Current

TA=25°C
100

Power Dissipation (W)

80

80
60
L ⋅ ID 60
tA =
40 BV − V DD
40

20 20

0 0
0.00001 0.0001 0.001 0.01 0 25 50 75 100 125 150 175
Time in avalanche, t A (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

100

80
Current rating ID(A)

60

40

20

0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)

Alpha & Omega Semiconductor, Ltd.

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