AO4446

30V N-Channel MOSFET

General Description Product Summary

The AO4446 uses advanced trench technology to VDS (V) = 30V

provide excellent RDS(ON), low gate charge and low ID = 15A (VGS = 10V)
gate resistance. This device is ideally suited for use RDS(ON) < 8.5mΩ (VGS = 10V)
in PWM applications. RDS(ON) < 14.5mΩ (VGS = 4.5V)

100% UIS Tested

100% Rg Tested

SOIC-8
D
Top View Bottom View
D
D
D
D

G G
S
S
S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 15
Current A TA=70°C ID 12 A
Pulsed Drain Current B IDM 40
Avalanche Current B IAR 20 A
Repetitive avalanche energy L=0.1mH B EAR 50 mJ
TA=25°C 3
PD W
Power Dissipation TA=70°C 2.1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 33 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 59 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 16 24 °C/W

Alpha & Omega Semiconductor, Ltd.

AO4446

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 2.2 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 40 A
VGS=10V, ID=15A 6.9 8.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 11 13.5
VGS=4.5V, ID=11A 11.8 14.5 mΩ
gFS Forward Transconductance VDS=5V, ID=15A 27 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.71 1 V
IS Maximum Body-Diode Continuous Current 4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1520 1825 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 306 pF
Crss Reverse Transfer Capacitance 214 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.47 0.7 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 33.7 40 nC
Qg(4.5V) Total Gate Charge 17 20 nC
VGS=10V, VDS=15V, ID=15A
Qgs Gate Source Charge 6.2 nC
Qgd Gate Drain Charge 10 nC
tD(on) Turn-On DelayTime 7.2 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.0Ω, 8.2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 22 ns
tf Turn-Off Fall Time 6.7 ns
trr Body Diode Reverse Recovery Time IF=15A, dI/dt=100A/µs 24 30 ns
Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=100A/µs 19 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 3: Nov. 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4446

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 10V 60
5V
25 4.5V 50 VDS=5V
VGS =4V
20 40
125°C
ID(A)

ID(A)
15 30

10
20
VGS =3.5V 25°C
5
10

0
0
0 1 2 3 4 5
1.5 2 2.5 3 3.5 4 4.5
VDS(Volts)
VGS(Volts)
Figure 1: On-Regions Characteristics
Figure 2: Transfer Characteristics

2
16
Normalized On-Resistance

1.8
14 VGS=4.5V
VGS=10V
1.6
RDS(ON) (mΩ )

12 ID=15A
1.4
10
1.2 VGS=4.5V
8 ID=11A
VGS=10V
1

6
0.8
0 5 10 15 20 25 30
0 25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

20
1.0E+02
ID=15A
1.0E+01 125°C
16
1.0E+00
125°C
RDS(ON) (mΩ )

1.0E-01
IS (A)

12 25°C
1.0E-02

1.0E-03
8
25°C 1.0E-04

1.0E-05
4
0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4446

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2500
VDS=15V
ID=15A
8 2000
Ciss

Capacitance (pF)
VGS (Volts)

6 1500

4 1000

Coss
2 500

Crss
0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100
80
RDS(ON) TJ(Max)=150°C
limited 10µs TA=25°C
1ms 100µs
10ms 60
10
ID (Amps)

Power (W)

0.1s
40
1s
1
10s
TJ(Max)=150°C
20
TA=25°C DC

0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Ambient (Note F)

10 D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=40°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse Ton
T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.