Shenzhen Tuofeng Semiconductor Technology Co.

, Ltd
8820

8820
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor

General Description Features

The 8820 uses advanced trench technology to VDS (V) = 20V

provide excellent RDS(ON), low gate charge and ID = 6A (VGS = 10V)
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected. This RDS(ON) < 28mΩ (VGS = 4.5V)
device is suitable for use as a uni-directional or bi- RDS(ON) < 38mΩ (VGS = 2.5V)
directional load switch, facilitated by its common-drain
configuration. Standard Product 8820 is Pb-free
(meets ROHS & Sony 259 specifications). 8820 is
a Green Product ordering option. 8820 is
electrically identical.

D1 D2
TSSOP-8
Top View

D1/D2 1 8 D1/D2
S1 2 7 S2 G1 G2
S1 3 6 S2
G1 4 5 G2

S1 S2

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±10 V
Continuous Drain
TA=25°C ID 7
Current A A
B
Pulsed Drain Current IDM 25
TA=25°C 1.5
PD W
Power Dissipation A TA=70°C 0.96
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 64 83 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 89 120 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 53 70 °C/W
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
8820
Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 20 V

IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V 1 µA

IGSS Gate-Body leakage current VDS=0V, VGS=±10V 10 µA

BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 V
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 0.65 1.2 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 25 A

VGS=4.5V, ID=6A 28
RDS(ON) Static Drain-Source On-Resistance
mΩ
VGS=2.5V, ID=4.6A 38

gFS Forward Transconductance VDS=5V, ID=6A 25 S

VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 615 pF
Coss Output Capacitance VGS=0V, VDS=10V, f=1MHz 150 pF
Crss Reverse Transfer Capacitance 120 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.9 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 8.5 12 nC
Qgs Gate Source Charge VGS=4.5V, VDS=10V, ID=7A 1.2 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 7 ns
tr Turn-On Rise Time VGS=5V, VDS=10V, RL=1.4Ω, 13 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 29 ns
tf Turn-Off Fall Time 11 ns
trr Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/µs 15 ns
Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs 5 nC

2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.TF DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. TF RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
8820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20
10V
3V VGS=5V

4V VGS =2V 15
20
ID(A)

ID(A)
10

10 VGS =1.5V
125°C
5

25°C

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5
VDS(Volts) VGS(Volts)
Figure 1: On-Regions Characteristi cs Figure 2: Transfer Characteristics

50 1.6
VGS =1.8V VGS=1.8V
ID=2A
Normalize ON-Resistance
40
VGS =2.5V 1.4
VGS=4.5V
RDS(ON)(mΩ)

30 VGS=2.5V
ID=5A
ID=4A
VGS =4.5V 1.2
20 VGS=10V

VGS =10V ID=7A

10 1.0

0 0.8
0 5 10 15 20 0 50 100 150
ID(A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

80 1E+01
ID=7A
70
1E+00
60
1E-01 125°C
RDS(ON)(mΩ)

50 125°C
IS(A)

1E-02
40

30 1E-03

20 25°C 1E-04 25°C

10
0 2 4 6 8 10 1E-05
VGS(Volts) VSD(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1400
VDS=10V
1200
4 ID=7A
1000 Ciss

Capacitance (pF)
VGS(Volts)

3 800

600
2
400 Crss
Coss
1
200

0 0
0 2 4 6 8 10 0 5 10 15 20

Qg (nC) VDS(Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 40
TJ(Max)=150°C, TA=25°C
TJ(Max)=150°C
10µs TA=25°C
30
10
Power (W)
ID (Amps)

100µs
20

1ms
1
10ms 10
DC
RDS(ON) 100m
limited 10s
1s 0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJA=83°C/W
1

PD
0.1
Ton
T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance