AO4828

60V Dual N-Channel MOSFET

General Description Features

The AO4828 uses advanced trench technology to VDS (V) = 60V
provide excellent RDS(ON) and low gate charge. This ID = 4.5A (VGS = 10V)
device is suitable for use as a load switch or in PWM RDS(ON) < 56mW (VGS = 10V)
applications. RDS(ON) < 77mW (VGS = 4.5V)

100% UIS tested

100% Rg tested

SOIC-8 D D
Top View Bottom View
Top View

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G1 G2

S1 S2

Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 4.5
Current AF TA=70°C ID 3.6 A
B
Pulsed Drain Current IDM 20
TA=25°C 2
PD W
Power Dissipation TA=70°C 1.28
Avalanche Current B IAR, IAS 19 A
B
Repetitive avalanche energy 0.1mH EAR, EAS 18 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RqJA
Maximum Junction-to-Ambient A Steady-State 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RqJL 35 60 °C/W

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 AO4828

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 V
VDS=60V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1 2.1 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 20 A
VGS=10V, ID=4.5A 46 56
mW
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 80 100
VGS=4.5V, ID=3A 64 77 mW
gFS Forward Transconductance VDS=5V, ID=4.5A 11 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 3 A
B
ISM Pulsed Body Diode Current 20 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 450 540 pF
Coss Output Capacitance VGS=0V, VDS=30V, f=1MHz 60 pF
Crss Reverse Transfer Capacitance 25 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.3 1.65 2 W
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 8.5 10.5 nC
Qg(4.5V) Total Gate Charge 4.3 5.5 nC
VGS=10V, VDS=30V, ID=4.5A
Qgs Gate Source Charge 1.6 nC
Qgd Gate Drain Charge 2.2 nC
tD(on) Turn-On DelayTime 4.7 ns
tr Turn-On Rise Time VGS=10V, VDS=30V, RL=6.7W, 2.3 ns
tD(off) Turn-Off DelayTime RGEN=3W 15.7 ns
tf Turn-Off Fall Time 1.9 ns
trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/ms 27.5 35 ns
Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/ms 32 nC

A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R qJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

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 AO4828

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 15
10.0V
5.0V VDS=5V
15
10
4.5V
ID (A)

125°C

ID(A)
10

4.0V
5
5
25°C

VGS=3.5V
0
0 1 2 3 4 5 0
2 2.5 3 3.5 4 4.5 5
VDS (Volts)
Fig 1: On-Region Characteristics VGS(Volts)
Figure 2: Transfer Characteristics

100 2
90 VGS=10V
Normalized On-Resistance

1.8
80 ID=4.5A
VGS=4.5V 1.6
RDS(ON) (mW)

70
VGS=4.5V
60 1.4 ID=3.0A
50
1.2
40 VGS=10V

30 1

20 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage Figure 4: On-Resistance vs. Junction Temperature

160 1.0E+01

140 ID=4.5A
1.0E+00

120 1.0E-01 125°C

RDS(ON) (mW)

IS (A)

100 125°C 1.0E-02

80
1.0E-03 25°C

60 25°C
1.0E-04
40
2 4 6 8 10 1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics

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 AO4828

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 800
VDS=30V
ID= 4.5A
8
600

Capacitance (pF)
Ciss
VGS (Volts)

6
400
4
Coss
200
2
Crss

0 0
0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
RDS(ON) TJ(Max)=150°C
limited
TA=25°C
100ms 10ms
30
10.0
Power (W)
ID (Amps)

10ms 1ms
20
1s
1.0
10s 0.1s 10
TJ(Max)=150°C
TA=25°C DC

0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
VDS (Volts) Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJA Normalized Transient

RqJA=62.5°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

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