AO4486

100V N-Channel MOSFET

General Description Product Summary

The AO4486 combines advanced trench MOSFET VDS 100V

technology with a low resistance package to provide ID (at VGS=10V) 4.2A
extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V) < 79mΩ
converters and synchronous rectifiers for consumer,
RDS(ON) (at VGS = 4.5V) < 90mΩ
telecom, industrial power supplies and LED backlighting.

100% UIS Tested

100% Rg Tested

SOIC-8
D
Top View Bottom View
D
D
D
D

G
G S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 4.2
ID
Current TA=70°C 3.4 A
C
Pulsed Drain Current IDM 31
Avalanche Current C IAS, IAR 14 A
Avalanche energy L=0.1mH C EAS, EAR 10 mJ
TA=25°C 3.1
PD W
Power Dissipation B TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 59 75 °C/W
Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W

Rev 0: Sep 2010 www.aosmd.com Page 1 of 6

 AO4486

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 V
VDS=100V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.6 2.2 2.7 V
ID(ON) On state drain current VGS=10V, VDS=5V 31 A
VGS=10V, ID=3A 62.5 79
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 121 151
VGS=4.5V, ID=3A 68.5 90 mΩ
gFS Forward Transconductance VDS=5V, ID=3A 20 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 620 778 942 pF
Coss Output Capacitance VGS=0V, VDS=50V, f=1MHz 38 55 81 pF
Crss Reverse Transfer Capacitance 13 24 35 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 1.45 2.2 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 13 16.3 20 nC
Qg(4.5V) Total Gate Charge 6.4 8.1 10 nC
VGS=10V, VDS=50V, ID=3.0A
Qgs Gate Source Charge 2.2 2.8 3.4 nC
Qgd Gate Drain Charge 2.4 4.1 5.8 nC
tD(on) Turn-On DelayTime 6 ns
tr Turn-On Rise Time VGS=10V, VDS=50V, RL=16.7Ω, 2.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 21 ns
tf Turn-Off Fall Time 2.4 ns
trr Body Diode Reverse Recovery Time IF=3A, dI/dt=500A/µs 14 21 28 ns
Qrr Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/µs 65 94 123 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: Sep 2010 www.aosmd.com Page 2 of 6

 AO4486

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 20
10V
VDS=5V

15 4.5V 15

3.5V
ID (A)

ID(A)
10 10

5 5 125°C
VGS=3V 25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

100 2.8

Normalized On-Resistance
90 2.4 VGS=10V
ID=3A
Ω)

VGS=4.5V
RDS(ON) (mΩ

80 2
17
5
VGS=4.5V
70 1.6
ID=3A 2
VGS=10V 10
60 1.2

50 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

150 1.0E+02
ID=3A
1.0E+01
130
40
1.0E+00
Ω)

110 125°C 125°C

RDS(ON) (mΩ

1.0E-01
IS (A)

1.0E-02
90
25°C
1.0E-03
25°C
70
1.0E-04

50 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 0: Sep 2010 www.aosmd.com Page 3 of 6

 AO4486

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200

1000
8 VDS=50V
Ciss
ID=3A

Capacitance (pF)
800
VGS (Volts)

6
600
4
400

2
200
Crss Coss

0 0
0 5 10 15 20 0 20 40 60 80 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 100.0
IAR (A) Peak Avalanche Current

TA=100°C 10µs
RDS(ON)
10.0
limited
TA=25°C 100µs
ID (Amps)

10.0 1.0
TA=125°C
1ms

10ms
TA=150°C 0.1 TJ(Max)=150°C
TA=25°C
10s
DC
1.0 0.0
1 10 100 1000 0.1 1 10 100
µs)
Time in avalanche, tA (µ VDS (Volts)
Figure 9: Single Pulse Avalanche capability (Note C) Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

Rev 0: Sep 2010 www.aosmd.com Page 4 of 6

 AO4486

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T
In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJA=75°C/W
1

0.1

PD
0.01 Single Pulse
Ton
T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 0: Sep 2010 www.aosmd.com Page 5 of 6

 AO4486

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 0: Sep 2010 www.aosmd.com Page 6 of 6