AO4800B

30V Dual N-Channel MOSFET

General Description Product Summary

The AO4800B uses advanced trench technology to VDS 30V

provide excellent RDS(ON) and low gate charge. The two ID (at VGS=10V) 6.9A
MOSFETs make a compact and efficient switch and RDS(ON) (at VGS=10V) < 27mΩ
synchronous rectifier combination for use in buck
RDS(ON) (at VGS = 4.5V) < 32mΩ
converters.
RDS(ON) (at VGS = 2.5V) < 50mΩ

100% UIS Tested

100% Rg Tested

SOIC-8 D1 D2

Top View Bottom View

Top View

S2 1 8 D2
G2 2 D2
7
S1 3 6 D1
G1 4 5 D1 G1 G2

S1 S2

Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 6.9
ID
Current TA=70°C 5.8 A
Pulsed Drain Current C IDM 30
Avalanche Current C IAS, IAR 14 A
Avalanche energy L=0.1mH C EAS, EAR 10 mJ
TA=25°C 2
PD W
Power Dissipation B TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W

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 AO4800B

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.7 1.1 1.5 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 30 A
VGS=10V, ID=6.9A 17.8 27
mΩ
TJ=125°C 28 40
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=6A 19 32 mΩ
VGS=2.5V, ID=5A 24 50 mΩ
gFS Forward Transconductance VDS=5V, ID=5A 33 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 630 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 75 pF
Crss Reverse Transfer Capacitance 50 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.5 3 4.5 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 6 7 nC
Qgs Gate Source Charge VGS=4.5V, VDS=15V, ID=6.9A 1.3 nC
Qgd Gate Drain Charge 1.8 nC
tD(on) Turn-On DelayTime 3 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.2Ω, 2.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 25 ns
tf Turn-Off Fall Time 4 ns
trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs 8.5 ns
Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 2.6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO4800B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 15
10V 3V
35 VDS=5V
4.5V
12
30

25 2.5V 9
ID (A)

ID(A)
20

15 6

10
VGS=2V 3 125°C 25°C
5

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

30 1.8

Normalized On-Resistance VGS=4.5V

ID=6A
1.6
25 VGS=4.5V
Ω)
RDS(ON) (mΩ

1.4
17
20
5
1.2 VGS=10V
ID=6.9A
2
15
10
VGS=10V
1

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

50 1.0E+01
ID=6.9A
1.0E+00
40
1.0E-01
Ω)

125°C
RDS(ON) (mΩ

125°C
IS (A)

25°C
30 1.0E-02

1.0E-03
20
1.0E-04
25°C
10 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO4800B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1000
VDS=15V
ID=6.9A
4 800
Ciss

Capacitance (pF)
VGS (Volts)

3 600

2 400
Coss

1 200

Crss
0 0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 100.0
TA=25°C
IAR (A) Peak Avalanche Current

TA=100°C 10µs
10.0
RDS(ON)
limited
TA=150°C
ID (Amps)

100µs
10.0 1.0 1ms
10ms
TA=125°C
0.1 DC
TJ(Max)=150°C 10s
TA=25°C

0.0
1.0
0.01 0.1 1 10 100
1 10 100 1000
µs)
Time in avalanche, tA (µ VDS (Volts)
Figure 9: Single Pulse Avalanche capability (Note C) Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000

Pulse Width (s)

Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

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 AO4800B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=90°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO4800B

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & W aveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 4: Dec 2011 www.aosmd.com Page 6 of 6