AON7408

30V N-Channel MOSFET

General Description Product Summary

The AON7408 uses advanced trench technology and VDS 30V

design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18A
This device is suitable for use in general purpose RDS(ON) (at VGS=10V) < 20m
applications.
RDS(ON) (at VGS=4.5V) < 32m

RoHS and Halogen-Free Compliant

100% UIS Tested

100% Rg Tested

D
DFN 3x3 EP
Top View Bottom View Top View

1 8

2 7

3 6

4 5 G

S
Pin 1

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain TC=25C 18
ID
Current B TC=100C 11.5 A
C
Pulsed Drain Current IDM 64
Continuous Drain TA=25C 10
IDSM A
Current A TA=70C 8
TC=25C 11
PD W
Power Dissipation B TC=100C 4.5
TA=25C 3.1
PDSM W
Power Dissipation A TA=70C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 25 40 C/W
RJA
Maximum Junction-to-Ambient A Steady-State 62 75 C/W
Maximum Junction-to-Case B Steady-State RJC 8.8 11 C/W

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 AON7408

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250A, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current A
TJ=55C 5
IGSS Gate-Body leakage current VDS=0V, VGS=20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGSID=250A 1.5 2.1 2.6 V
ID(ON) On state drain current VGS=10V, VDS=5V 64 A
VGS=10V, ID=10A 15.3 20
m
RDS(ON) Static Drain-Source On-Resistance TJ=125C 23.3 30
VGS=4.5V, ID=5A 22.7 32 m
gFS Forward Transconductance VDS=5V, ID=10A 17 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 373 448 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 67 pF
Crss Reverse Transfer Capacitance 41 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.6 1.8 2.8
SWITCHING PARAMETERS
Qg Total Gate Charge 7.1 8.6 nC
Qgs Gate Source Charge VGS=4.5V, VDS=15V, ID=10A 1.2 nC
Qgd Gate Drain Charge 1.6 nC
tD(on) Turn-On DelayTime 4.3 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.5, 2.8 ns
tD(off) Turn-Off DelayTime RGEN=3 15.8 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/s 10.5 12.6 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s 4.5 nC
A: The value of RJA is measured with the device in a still air environment with TA =25C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C.
D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.
H. The maximum current rating is limited by bond-wires.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AON7408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 15
6V
10V VDS=5V
50
12

40
4.5V 9
ID (A)

ID(A)
30
6
20
VGS=3.5V
3 125C
10
25C

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

40 1.8

Normalized On-Resistance
35
1.6 VGS=10V

30
)
RDS(ON) (m

VGS=4.5V 1.4
17
25
5
1.2 2
20
VGS =4.5V
10
VGS=10V
1
15

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (C) 0
Voltage Figure 4: On-Resistance vs. Junction
18Temperature

60 1.0E+01
ID=10A
1.0E+00
50
40
1.0E-01
)

40
RDS(ON) (m

125C
IS (A)

1.0E-02
125C
30 25C
1.0E-03

20 1.0E-04
25C
10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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 AON7408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 600
VDS=15V
ID=10A 500
8
Ciss

Capacitance (pF)
400
VGS (Volts)

6
300
4
200 Coss

2
100

Crss
0 0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 100

10s 10s 80 TJ(Max)=150C

10
Tc=25C
ID (Amps)

Power (W)

RDS(ON) 100s 60 17
1 limited DC 1ms 5
10ms 40 2
10
0.1
TJ(Max)=150C
20
Tc=25C

0.01 0
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Figure 9: Maximum Forward Biased Pulse Width (s)
18Junction-to-Case
Figure 10: Single Pulse Power Rating
Safe Operating Area (Note H)
(Note F)

10
D=Ton/T In descending order
Z JC Normalized Transient

TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RJc=11C/W 40
1

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON7408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 25

12
Power Dissipation (W)

20

Current rating ID(A)

9 15

6 10

3 5

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
C)
TCASE ( C)
TCASE (
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JA Normalized Transient

TJ,PK=TA+PDM.ZJA.RJA
Thermal Resistance

1 RJA=75C/W

0.1

0.01
Single Pulse

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON7408

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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