AON6554

30V N-Channel AlphaMOS

General Description Product Summary

• Latest Trench Power AlphaMOS (αMOS LV) technology VDS 30V

• Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A
• Low Gate Charge RDS(ON) (at VGS=10V) < 2.9mΩ
• High Current Capability
RDS(ON) (at VGS=4.5V) < 3.7mΩ
• RoHS and Halogen-Free Compliant

Application 100% UIS Tested

100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial

DFN5X6 D
Top View
Top View Bottom View

1 8

2 7

3 6

4 5
G
PIN1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TC=25°C 85
ID
Current G TC=100°C 66 A
Pulsed Drain Current C IDM 260
Continuous Drain TA=25°C 36
IDSM A
Current TA=70°C 28
C
Avalanche Current IAS 50 A
Avalanche energy L=0.05mH C EAS 63 mJ
VDS Spike 100ns VSPIKE 36 V
TC=25°C 70
PD W
Power Dissipation B TC=100°C 28
TA=25°C 5.6
PDSM W
Power Dissipation A TA=70°C 3.6
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 18 22 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 40 55 °C/W
Maximum Junction-to-Case Steady-State RθJC 1.5 1.8 °C/W

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 AON6554

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=125°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±12V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 1.8 2.2 V
VGS=10V, ID=20A 2.3 2.9
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 3.2 4.0
VGS=4.5V, ID=20A 3 3.7 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 140 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.71 1 V
IS Maximum Body-Diode Continuous Current 78 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3020 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 880 pF
Crss Reverse Transfer Capacitance 140 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.9 1.8 2.7 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 47.3 65 nC
Qg(4.5V) Total Gate Charge 21.3 30 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 8 nC
Qgd Gate Drain Charge 7.2 nC
tD(on) Turn-On DelayTime 7.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 4.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 41 ns
tf Turn-Off Fall Time 8 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 17.8 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 33 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AON6554

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
3.5V VDS=5V

80 4V 80
4.5V
10V
60 60
ID (A)

3V 125°C

ID(A)
40 40 25°C

20 20

VGS=2.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

4 1.6

3.5 Normalized On-Resistance

VGS=4.5V VGS=10V
1.4 ID=20A
3
Ω)
RDS(ON) (mΩ

2.5 1.2

2 VGS=4.5V
VGS=10V ID=20A
1
1.5

1 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Temperature (°C)
Gate Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

6 1.0E+02
ID=20A
5 1.0E+01

1.0E+00 125°C
4 125°C
Ω)
RDS(ON) (mΩ

1.0E-01
IS (A)

3
1.0E-02
25°C
2
1.0E-03
25°C
1 1.0E-04

0 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON6554

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 5000
VDS=15V
ID=20A
8 4000

Ciss

Capacitance (pF)
VGS (Volts)

6 3000

4 2000
Coss
2 1000
Crss

0 0
0 10 20 30 40 50 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 500
TJ(Max)=150°C
TC=25°C
10µs 10µs 400
100.0 RDS(ON)
limited
100µs
Power (W)
ID (Amps)

10.0 300
DC 1ms
10ms
1.0 200

0.1 TJ(Max)=150°C 100

TC=25°C
0.0 0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10 100
VDS (Volts)
Pulse Width (s)
VGS > or equal 4.5V Figure 10: Single Pulse Power Rating Junction-to-Case
Figure 9: Maximum Forward Biased (Note F)
Safe Operating Area (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=1.8°C/W
1

PD
0.1
Single Pulse
Ton
T

0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON6554

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100

80 80
Power Dissipation (W)

Current rating ID(A)

60 60

40 40

20 20

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
°C)
TCASE (° °C)
TCASE (°
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=55°C/W

0.1

PD
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON6554

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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