AON7408

30V N-Channel MOSFET

General Description Product Summary

• The AON7408 uses advanced trench technology and VDS 30V

design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18A
This device is suitable for use in general purpose RDS(ON) (at VGS=10V) < 20mW
applications.
RDS(ON) (at VGS=4.5V) < 32mW

• RoHS and Halogen-Free Compliant

100% UIS Tested

100% Rg Tested

D
DFN 3x3 EP
Top View Bottom View Top View

S 1 8 D
S 2 7 D
S 3 6 D
G 4 5 D G

S
Pin 1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 18
ID
Current B TC=100°C 11.5 A
Pulsed Drain Current C IDM 64
Continuous Drain TA=25°C 10
IDSM A
Current A TA=70°C 8
TC=25°C 11
PD W
Power Dissipation B TC=100°C 4.5
TA=25°C 3.1
PDSM W
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 25 40 °C/W
A RqJA
Maximum Junction-to-Ambient Steady-State 62 75 °C/W
B
Maximum Junction-to-Case Steady-State RqJC 8.8 11 °C/W

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 AON7408

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS，ID=250mA 1.5 2.1 2.6 V
ID(ON) On state drain current VGS=10V, VDS=5V 64 A
VGS=10V, ID=10A 15.3 20
mW
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 23.3 30
VGS=4.5V, ID=5A 22.7 32 mW
gFS Forward Transconductance VDS=5V, ID=10A 17 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 373 448 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 67 pF
Crss Reverse Transfer Capacitance 41 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.6 1.8 2.8 W
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 7.1 11 nC
Qg(4.5V) Total Gate Charge 3.5 6 nC
VGS=10V, VDS=15V, ID=10A
Qgs Gate Source Charge 1.2 nC
Qgd Gate Drain Charge 1.6 nC
tD(on) Turn-On DelayTime 4.3 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.5W, 2.8 ns
tD(off) Turn-Off DelayTime RGEN=3W 15.8 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/ms 10.5 12.6 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/ms 4.5 nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

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 AON7408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 15
6V
10V VDS=5V
50
12

40
4.5V 9
ID (A)

ID(A)
30
6
20
VGS=3.5V
3 125°C
10
25°C

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

40 1.8
Normalized On-Resistance
35
1.6 VGS=10V

30
RDS(ON) (mW)

VGS=4.5V 1.4
17
25
5
1.2 2
20
10
VGS=4.5V
VGS=10V
1
15

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) 0
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction
18
Gate Voltage
Temperature

60 1.0E+01
ID=10A
1.0E+00
50
40
1.0E-01
RDS(ON) (mW)

40 125°C
IS (A)

1.0E-02
125°C
30 25°C
1.0E-03

20 1.0E-04
25°C
10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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 AON7408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 600
VDS=15V
ID=10A 500
8
Ciss

Capacitance (pF)
400
VGS (Volts)

6
300
4
200 Coss

2
100

Crss
0 0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 100

10ms 10ms 80 TJ(Max)=150°C

10
Tc=25°C
Power (W)
ID (Amps)

RDS(ON) 100ms 60 17
1 limited DC 1ms 5
10ms 40 2
10
0.1
TJ(Max)=150°C
20
Tc=25°C

0.01 0
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Figure 9: Maximum Forward Biased Pulse Width (s)
18 Junction-to-Case
Figure 10: Single Pulse Power Rating
Safe Operating Area (Note H)
(Note F)

10
D=Ton/T In descending order
ZqJC Normalized Transient

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RqJc=11°C/W 40
1

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON7408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 25

12
Power Dissipation (W)

20

Current rating ID(A)

9 15

6 10

3 5

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°C) TCASE (°C)
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJA Normalized Transient
Thermal Resistance

1 RqJA=75°C/W

0.1

0.01
Single Pulse

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON7408

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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