AON7506

30V N-Channel AlphaMOS

General Description Product Summary

Latest Trench Power AlphaMOS (MOS LV) technology VDS 30V

Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A
Low Gate Charge RDS(ON) (at VGS=10V) < 9.8m
High Current Capability
RDS(ON) (at VGS=4.5V) < 15.8 m
RoHS and Halogen-Free Compliant

Application 100% UIS Tested

100% Rg Tested
DC/DC Converters in Computing, Servers, and POL
Isolated DC/DC Converters in Telecom and Industrial

DFN 3x3 EP D
Top View Bottom View Top View

1 8

2 7

3 6

4 5
G

Pin 1 S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain TC=25C 12
ID
Current G TC=100C 9.4 A
C
Pulsed Drain Current IDM 48
Continuous Drain TA=25C 12
IDSM A
CurrentG TA=70C 10.5
Avalanche Current C IAS 20 A
Avalanche energy L=0.05mH C EAS 10 mJ
VDS Spike 100ns VSPIKE 36 V
TC=25C 20.5
PD W
Power Dissipation B TC=100C 8
TA=25C 3.1
PDSM W
Power Dissipation A TA=70C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 30 40 C/W
RJA
Maximum Junction-to-Ambient A D Steady-State 60 75 C/W
Maximum Junction-to-Case Steady-State RJC 5 6 C/W

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 AON7506

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250A, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current A
TJ=55C 5
IGSS Gate-Body leakage current VDS=0V, VGS=20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 1.3 1.8 2.3 V
VGS=10V, ID=12A 8 9.8
m
RDS(ON) Static Drain-Source On-Resistance TJ=125C 11 13.5
VGS=4.5V, ID=10A 13 15.8 m
gFS Forward Transconductance VDS=5V, ID=12A 45 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.73 1 V
IS Maximum Body-Diode Continuous Current G 12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 542 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 233 pF
Crss Reverse Transfer Capacitance 31 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1 2 3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 9 12.2 nC
Qg(4.5V) Total Gate Charge 4.3 5.8 nC
VGS=10V, VDS=15V, ID=12A
Qgs Gate Source Charge 2.2 nC
Qgd Gate Drain Charge 1.7 nC
tD(on) Turn-On DelayTime 4 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.25, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=3 18 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/s 9.7 ns
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/s 11.5 nC
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
Power dissipation PDSM is based on R JA t 10s value and the maximum allowed junction temperature of 150C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150C.
D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AON7506

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 50
10V 4.5V VDS=5V
4V
40 6V 40

30 30
ID (A)

ID(A)
3.5V

20 20
125C

10 10
VGS=3V 25C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

16 1.6

VGS=4.5V Normalized On-Resistance

14
VGS=10V
1.4 ID=12A
12
)
RDS(ON) (m

17
10 1.2 5
2
8
VGS=4.5V10
VGS=10V 1
ID=10A
6

4 0.8
0 3 6 9 12 15 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

25 1.0E+01
ID=12A

20 1.0E+00
40
1.0E-01 125C
)

15 125C
RDS(ON) (m

IS (A)

1.0E-02
10 25C
1.0E-03
5 25C
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON7506

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 800
VDS=15V
ID=12A
8
600 Ciss

Capacitance (pF)
VGS (Volts)

6
400
4 Coss

200
2

Crss
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 150
TJ(Max)=150C
10s TC=25C
RDS(ON) 10s
10.0 limited
100s 100
ID (Amps)

Power (W)

1.0 1ms
DC 100ms
TJ(Max)=150C
TC=25C 50
0.1

0.0 0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-Case
Operating Area (Note F) (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZJC.RJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JC Normalized Transient
Thermal Resistance

RJC=6C/W
1

PD
0.1
Single Pulse
Ton
T

0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON7506

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20

25
Power Dissipation (W)

15

Current rating ID(A)

20

15 10

10
5
5

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
C)
TCASE ( C)
TCASE (
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JA Normalized Transient
Thermal Resistance

1 RJA=75C/W 40

0.1

PD
0.01
Single Pulse Ton
T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON7506

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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