AOD452A

N-Channel SDMOSTM POWER Transistor

General Description Features

The AOD452A is fabricated with SDMOSTM trench VDS (V) = 25V

technology that combines excellent RDS(ON) with low ID = 55A (V GS = 10V)
gate charge.The result is outstanding efficiency with RDS(ON) < 8mΩ (V GS = 10V)
controlled switching behavior. This universal technology RDS(ON) <14mΩ (V GS = 4.5V)
is well suited for PWM, load switching and general
purpose applications.
100% UIS Tested!
100% Rg Tested!

TO-252
D-PAK Bottom View
Top View D
D

G
S G
S
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 25 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 55
CurrentG TC=100°C ID 43
C
Pulsed Drain Current IDM 120 A
Pulsed Forward Diode CurrentC ISM 120
Avalanche Current C IAR 35
C
Repetitive avalanche energy L=50µH EAR 31 mJ
TC=25°C 50
PD W
Power Dissipation B TC=100°C 25
TA=25°C 2.5
A PDSM W
Power Dissipation TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 14.2 20 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 39 50 °C/W
Maximum Junction-to-Case B Steady-State RθJC 2.5 3 °C/W
Maximum Junction-to-TAB B Steady-State RθJC-TAB 2.7 3.2 °C/W

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AOD452A

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V 25 V
VDS=25V, VGS=0V 10
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 50
IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 2 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 120 A
VGS=10V, ID=30A 6 8
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 8.6 12
VGS=4.5V, ID=20A 11.5 14 mΩ
gFS Forward Transconductance VDS=5V, ID=30A 50 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 55 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 990 1180 1450 pF
Coss Output Capacitance VGS=0V, VDS=12.5V, f=1MHz 210 275 350 pF
Crss Reverse Transfer Capacitance 125 175 245 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.1 1.7 2.5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 18 21.7 26 nC
Qg(4.5V) Total Gate Charge 9 11 13 nC
VGS=10V, VDS=12.5V, ID=30A
Qgs Gate Source Charge 3 4 5 nC
Qgd Gate Drain Charge 4.5 6.4 9 nC
tD(on) Turn-On DelayTime 6.8 ns
tr Turn-On Rise Time VGS=10V, VDS=12.5V, RL=0.42Ω, 13.8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 21.5 ns
tf Turn-Off Fall Time 8.7 ns
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/µs 8.4 10.6 13 ns
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs 13 16 20 nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev1 : Feb 2010

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD452A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
10V 5V
VDS=5V
6V
80 80
4.5V
7V
60 60
ID (A)

ID(A)
4V
40 40

VGS=3.5V 125°C
20 20
25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

18 2
16
Normalized On-Resistance

1.8
14 VGS=10V
VGS=4.5V ID=30A
12 1.6
RDS(ON) (mΩ)

10 17
1.4
8 5
VGS=10V 2
6 1.2
VGS=4.5V10
4
1 ID=20A
2
0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
18
Figure 4: On-Resistance vs. Junction
Temperature

30 1.0E+02
ID=30A
25 1.0E+01
40
1.0E+00
20
125°C
RDS(ON) (mΩ)

1.0E-01
IS (A)

15 125°C
1.0E-02 25°C
10
1.0E-03
25°C
5
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AOD452A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1800

1600
VDS=12.5V
8 ID=30A 1400 Ciss

Capacitance (pF)
1200
VGS (Volts)

6
1000

800
4
600 Coss

2 400

200
Crss
0 0
0 5 10 15 20 25 0 5 10 15 20 25
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 10µs 10µs 160 TJ(Max)=175°C

RDS(ON) TA=25°C
100µs
limited
Power (W)

120 17
ID (Amps)

10.0
1ms
DC 5
10ms
1.0 80 2
10
TJ(Max)=175°C
0.1 TC=25°C 40

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
0
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC=3°C/W
Thermal Resistance

40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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AOD452A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 60
TA=25°C
ID(A), Peak Avalanche Current

50
TA=100°C

Power Dissipation (W)

40
TA=150°C
10 30
TA=125°C
20

10

1 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, t A (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

60 10000

50 TA=25°C
1000
Current rating ID(A)

40
Power (W)

17
100 5
30
2
20 10
10

10
1
0 1E- 1E- 0.001 0.01 0.1 1 10 100 1000
0 25 50 75 100 125 150 175 05 04 0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
Thermal Resistance

1 RθJA=50°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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AOD452A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 12 16 3

di/dt=800A/us 14 di/dt=800A/us
25 125ºC 10 125ºC 2.5
12
20 8 2
10
trr
Qrr (nC)

25ºC

trr (ns)
Irm (A)
25ºC
15 6 8 1.5

S
Qrr 125ºC 6 125ºC
10 4 1
Irm 4
S
5 25ºC 2 0.5
2 25ºC

0 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IS (A) IS (A)
Figure 17: Diode Reverse Recovery Charge and Figure 18: Diode Reverse Recovery Time and
Peak Current vs. Conduction Current Softness Factor vs. Conduction Current

25 10 15 2.5
Is=20A
Is=20A 125ºC
20 8 12 125ºC 2
trr
25ºC 9 1.5
15 6
Qrr (nC)

25ºC
trr (ns)
Irm (A)

S
Qrr
10 125º 4 6 125º 1

S
5 25ºC 2 3 0.5
25ºC
Irm
0 0 0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
di/dt (A/µs) di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and Figure 20: Diode Reverse Recovery Time and
Peak Current vs. di/dt Softness Factor vs. di/dt

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AOD452A

Gate Charge Test Circuit & W aveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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