AON7702

30V N-Channel MOSFET

SRFET TM

General Description Product Summary

SRFETTM AON7702 uses advanced trench technology VDS 30V

with a monolithically integrated Schottky diode to provide ID (at VGS=10V) 37A
excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V) < 9.5mΩ
suitable for use as a low side FET in SMPS, load RDS(ON) (at VGS = 4.5V) < 14.5mΩ
switching and general purpose applications.

100% UIS Tested

100% Rg Tested

DFN 3x3A D
Top View Bottom View
Top View
SRFETTM
1 8 Soft Recovery MOSFET:
2 7 Integrated Schottky Diode
3 6

4 5 G

Pin 1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 37
ID
Current TC=100°C 23 A
C
Pulsed Drain Current IDM 80
Continuous Drain TA=25°C 13.5
IDSM A
Current TA=70°C 11
Avalanche Current C IAS, IAR 19 A
Avalanche energy L=0.1mH C EAS, EAR 18 mJ
TC=25°C 23
PD W
Power Dissipation B TC=100°C 9
TA=25°C 3.1
PDSM W
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 60 75 °C/W
Maximum Junction-to-Case Steady-State RθJC 4.5 5.4 °C/W

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 AON7702

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V
VDS=30V, VGS=0V 0.5
IDSS Zero Gate Voltage Drain Current mA
TJ=125°C 100
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 2 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 80 A
VGS=10V, ID=13.5A 7.6 9.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 12.6 15.5
VGS=4.5V, ID=11A 11.6 14.5 mΩ
gFS Forward Transconductance VDS=5V, ID=13A 25 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 0.7 V
IS Maximum Body-Diode Continuous Current 30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 650 810 980 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 94 135 180 pF
Crss Reverse Transfer Capacitance 60 100 140 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.3 2.5 3.7 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 13 17 21 nC
Qg(4.5V) Total Gate Charge 7 8.5 10.5 nC
VGS=10V, VDS=15V, ID=13.5A
Qgs Gate Source Charge 2.3 nC
Qgd Gate Drain Charge 4.5 nC
tD(on) Turn-On DelayTime 4 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.2Ω, 3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 23 ns
tf Turn-Off Fall Time 5 ns
trr Body Diode Reverse Recovery Time IF=13.5A, dI/dt=500A/µs 4 5 6 ns
Qrr Body Diode Reverse Recovery Charge IF=13.5A, dI/dt=500A/µs 3.5 4.3 5.2 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AON7702

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

35 35
10V VDS=5V
30 30
4.5
4V
25 25
3.5V
20 20
ID (A)

ID(A)
15 15
125°C
10 10
25°C
VGS=3V
5 5

0 0

0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4

VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

16 2.2

14 Normalized On-Resistance 2

VGS=4.5V 1.8 VGS=10V

12 ID=13.5A
Ω)
RDS(ON) (mΩ

1.6
10
VGS=10V 1.4
8 VGS=4.5V
1.2 ID=11A
6 1

4 0.8
1 5 9 13 17 0 25 50 75 100 125 150 175 200
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage (Note E) (Note E)

25 1.0E+02
ID=13.5A
1.0E+01
125°C
20 40
1.0E+00
Ω)
RDS(ON) (mΩ

125°C
IS (A)

15 1.0E-01

1.0E-02 25°C
10 25°C
1.0E-03

5 1.0E-04
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON7702

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=13.5A
8 Ciss
900

Capacitance (pF)
VGS (Volts)

6
600

300 Crss
2
Coss

0 0
0 5 10 15 20 0 10 20 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

200
100.0

RDS(ON) 10µs 160 TJ(Max)=150°C

10µs
10.0 limited TC=25°C
ID (Amps)

Power (W)

100µs 120 17
1.0 1ms 5
DC
10ms 80 2
10
0.1 TJ(Max)=150°C
40
TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased 18
Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T
In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Thermal Resistance

RθJC=5.4°C/W 40
1

0.1 PD

Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON7702

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100.0 25
TA=25°C
IAR (A) Peak Avalanche Current

20

Power Dissipation (W)

TA=150°C TA=100°C

15
TA=125°C

10

10.0 0
1 10 100 1000 0 25 50 75 100 125 150
µs)
Time in avalanche, tA (µ °C)
TCASE (°
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

40 10000

35 TA=25°C
30 1000
Current rating ID(A)

25 17
Power (W)

5
20 100
2
15 10
10 10
5

0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
°C)
TCASE (° Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=75°C/W 40

0.1

PD
0.01
Single Pulse Ton
T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON7702

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 5: Aug. 2011 www.aosmd.com Page 6 of 6