WPM3407

WPM3407

Single P-Channel, -30 V, -4.4A,Power MOSFET

Description Http://www.sh-willsemi.com
The WPM3407 uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is suitable for
use in DC-DC conversion applications. Standard Product 3
WPM3407 is Pb-free.

Features 1
2

V(BR)DSS RDS(on) Typ SOT 23-3

36 mΩ @ −10 V
−30 V
53 mΩ @ −4.5 V pin connections :

Application PïChannel

z Power Management in Note book

z Portable Equipment G 1
z Battery Powered System
3 D
z DC/DC Converter
z Load Switch S 2

Top View

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Marking:
Parameter Symbol 10 S Steady State Unit
Drain-Source Voltage VDS -30 Drain
V 3
Gate-Source Voltage VGS ±20
- 3.7 WP7Z
Continuous Drain Current TA=25°C - 4.4
ID
(TJ = 150 °C)a TA=70°C - 3.5 - 2.9 A
1 2
Pulsed Drain Current IDM -20
Gate Source
Maximum Power TA=25°C 1.4 1.0
PD W
Dissipation a TA=70°C 0.9 0.6 W P7= Specific Device Code
Z = Date Code
Operating Junction and Storage
TJ, Tstg -55 to 150 °C
Temperature Range

Order information
Part Number Package Shipping
WPM3407-3/TR SOT23-3 3000Tape&Reel

Will Semiconductor Ltd. 1 2015/08/25 – Rev. 1.3

 WPM3407

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t ≤ 10 s 70 90
Junction-to-Ambient Thermal Resistance a RθJA
Steady State 90 125 °C/W
Junction-to-Case Thermal Resistance Steady State RθJC 50 80

a. Surface Mounted on FR4 Board using 1 in sq pad size, 1oz Cu.

Electrical Characteristics (T = 25°C unless otherwise noted)

J

Parameter Symbol Test Condition Min Typ Max Unit

Static Parameters

Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250 µA -30 V

TJ = 25°C -1
Zero Gate Voltage Drain Current IDSS VDS= 2 4 V , VGS = 0 V µA
TJ = 85°C -10
Gate-Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
Gate Threshold Voltage VGS(th) VGS = VDS, ID = -250 µA -1.0 -2.0 -3.0 V
VGS = -10V, ID =-4.4A 36 46
Drain-source On-Resistance RDS(on) mΩ
VGS = -4.5, ID =-3.0A 53 66

Forward Recovery Voltage VSD VGS = 0 V, IS =-1.0A -0.5 -0.79 -1.5 V

Forward Transconductance gFS VDS = -5.0 V, ID = -5 A 5 8 S
Dynamic
Input Capacitance Ciss 700 950 1200
Output Capacitance Coss VGS = 0 V, f = 1.0 MHz, VDS = -15 V 90 120 150 pF
Reverse Transfer Capacitance Crss 75 100 125
Total Gate Charge Qg(tot) 13 18 23
Threshold Gate Charge Qg(th) 1.5 2 2.5
VGS = -10 V, VDS = -15 V, ID =-5 A nC
Gate- Source Charge Qgs 2 2.5 3
Gate- Drain Charge Qgd 3 3.8 4.5
Gate Resistance Rg VGS = 0 V, VDS = 0 V, f = 1.0 MHz 5 8 Ω
Switching Parameters
Turn-On Delay Time td(on) 8 11 15
Rise Time tr VGS = -10 V, VDS = -15 V, 4 6 9
ns
Turn-Off Delay Time td(off) ID=-4.3A, RG=6 Ω 30 40 50
Fall Time tf 5 7.5 10
Body Diode Reverse Recovery Time trr IF=-5A, dI/dt=100A/µs 25 ns
Body Diode Reverse Recovery Charge Qrr IF=-5A, dI/dt=100A/µs 14 nC

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 WPM3407

Typical Performance Characteristis

24
VGS=10V

RDS(ON)ON Resistance(mOhm)
150
20
VGS=6V
ID,Drain Current(A)

120
16
VGS=4V
12 90 VGS=4.5V
VGS=6V
8
VGS=3V 60

4
30 V GS=10V
0
0 1 2 3 4 5 0 5 10 15 20
VDS,Drain-Source voltage(V) ID, Drain Current(A)

Drain Current VS Drain-Source voltage Drain Current vs ON Resistance

0.20 25
VDS=-2V
RDS(ON) ON Resistance(Ohm)

0.16 20
ID=-3A
ID,Drain Current(A)

15
0.12

10
0.08

5
0.04
0
0 2 4 6 8 10 0 1 2 3 4 5 6
VGS,Gate-Source Voltage(V) VGS,Gate-Source Voltage(V)

Gate-Source Voltage vs ON Resistance Drain Current VS Gate-Source Voltage

1.6
Normalized On-Resistance

1.4 VGS=-10V

VGS=-4.5V
1.2

1 ID=-3A

0.8
0 25 50 75 100 125 150 175
Temperature (°C)

On-Resistance vs. Junction

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 WPM3407

10 1200
VDS=-15V
9
ID=-6A 1000
8 Ciss

Capacitance (pF)
7
800
-VGS (Volts)

6
5 600
4
3 400
Coss
2
200
1
Crss
0 0
0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Gate-Charge Characteristics Capacitance Characteristics

100 TJ(Max)=150°C 40
TA=25°C TJ(Max)=150°C
10Ps TA=25°C
RDS(ON) 30
100Ps
10 limited
Power (W)
-ID (Amps)

1ms
0.1s 20
10ms
1
1s 10
10s
DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)

Maximum Forward Biased Safe Single Pulse Power Rating Junction-to-

Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZTJA.RTJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZTJA Normalized Transient

RTJA=40°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Normalized Maximum Transient Thermal Impedance

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 WPM3407

Avalanche Energy (Single pulsed) Test Circuit & Waveforms

EAS=1/2 L*IAR2

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 WPM3407

Power Dissipation Characteristics

1. The package of WPM3407 is SOT23-3, surface mounted on FR4 Board using 1 in sq pad size，
1 oz Cu，R θJA is 125 ℃/W.
2. The power dissipation PD is based on TJ(MAX)=150°C, and the relation between TJ and PD is TJ = Ta + R θJA* PD , the
maximum power dissipation is determined by R θJA .
3. The R θJA is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller R θJA and result in
larger maximum power dissipation.

125 ℃/W when mounted on

a 1 in2 pad of 1 oz copper.

Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.3

 WPM3407

Packaging Information
SOT-23-3 Package Outline Dimension

Will Semiconductor Ltd. 7 2015/08/25 – Rev. 1.3