AON6908A

30V Dual Asymmetric N-Channel MOSFET

General Description Product Summary

The AON6908A is designed to provide a high efficiency Q1 Q2

synchronous buck power stage with optimal layout and VDS 30V 30V
board space utilization. It includes two specialized ID (at VGS=10V) 46A 80A
MOSFETs in a dual Power DFN5x6 package. The Q1 "High
RDS(ON) (at VGS=10V) <8.9mΩ <3.6mΩ
Side" MOSFET is desgined to minimze switching losses.
The Q2 "Low Side" MOSFET is an SRFET™ that features RDS(ON) (at VGS = 4.5V) <12.5mΩ <4.5mΩ
low RDS(ON) to reduce conduction losses as well as an
integrated Schottky diode with low QRR and Vf to reduce 100% UIS Tested
switching losses. The AON6908A is well suited for use in 100% Rg Tested
compact DC/DC converter applications.

DFN5X6
Top View Bottom View

PIN1
Top View Bottom
Bottom View
View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max Q1 Max Q2 Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 ±12 V
Continuous Drain TC=25°C 46 80
ID
CurrentG TC=100°C 28 62 A
C
Pulsed Drain Current IDM 100 200
Continuous Drain TA=25°C 11.5 17
IDSM A
Current TA=70°C 9 13.5
Avalanche Current C IAS, IAR 27 40 A
Avalanche Energy L=0.1mH C EAS, EAR 36 80 mJ
VDS Spike 100ns VSPIKE 36 36 V
TC=25°C 31 78
PD W
Power Dissipation B TC=100°C 12 31
TA=25°C 1.9 2.1
PDSM W
Power Dissipation A TA=70°C 1.2 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 Units
Maximum Junction-to-Ambient A t ≤ 10s 29 24 35 29 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 56 50 67 60 °C/W
Maximum Junction-to-Case Steady-State RθJC 3.3 1.2 4 1.6 °C/W

Rev0 : Sep 2010 www.aosmd.com Page 1 of 11

 AON6908A

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 1.8 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 100 A
VGS=10V, ID=11.5A 7.4 8.9
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 11.1 13.4
VGS=4.5V, ID=11.5A 10 12.5 mΩ
gFS Forward Transconductance VDS=5V, ID=11.5A 50 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 34 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 680 850 1110 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 260 380 540 pF
Crss Reverse Transfer Capacitance 18 30 51 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 10 12.5 15 nC
Qg(4.5V) Total Gate Charge 4.6 5.7 6.9 nC
VGS=10V, VDS=15V, ID=11.5A
Qgs Gate Source Charge 1.6 2 2.4 nC
Qgd Gate Drain Charge 1.5 2.6 3.6 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 9.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 18.5 ns
tf Turn-Off Fall Time 4 ns
trr Body Diode Reverse Recovery Time IF=11.5A, dI/dt=500A/µs 8 10.5 13 ns
Qrr Body Diode Reverse Recovery Charge IF=11.5A, dI/dt=500A/µs 13 17.2 21 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0 : Sep 2010 www.aosmd.com Page 2 of 11

 AON6908A

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 80
10V 5V 4.5V VDS=5V
6V
80
7V 4V 60

60
ID (A)

ID(A)
3.5V 40
40
125°C
VGS=3V 20
20
25°C

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

14 1.8
Normalized On-Resistance VGS=10V
12 1.6 ID=11.5A
VGS=4.5V
RDS(ON) (mΩ )

10
1.4 17
VGS=4.5V
5
8 ID=11.5A
1.2 2
10
6 VGS=10V
1

4
0 5 10 15 20 25 30 0.8
0 25 50 75 100 125 150 175
ID (A) 0
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate 18
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

25 1.0E+02
ID=11.5A
1.0E+01
20
1.0E+00
40
125°C
RDS(ON) (mΩ )

1.0E-01
IS (A)

15
1.0E-02 25°C
125°C

1.0E-03
10
1.0E-04
25°C
1.0E-05
5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
2 4 6 8 10
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 0 : Sep 2010 www.aosmd.com Page 3 of 11

 AON6908A

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1400
VDS=15V
ID=11.5A 1200
8 Ciss
1000

Capacitance (pF)
VGS (Volts)

6
800

600
4 Coss

400
2
200 Crss

0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 160 TJ(Max)=150°C

10µs
RDS(ON) TC=25°C
Power (W)
ID (Amps)

10.0 limited 100us 120

1ms
1.0 DC 80

TJ(Max)=150°C
0.1 40
TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=4°C/W
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON6908A

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100.0 35
IAR (A) Peak Avalanche Current

30

Power Dissipation (W)

25
TA=25°C TA=100°C
20
TA=125°C
15

TA=150°C 10

10.0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

50 10000

TA=25°C
40
1000
Current rating ID(A)

Power (W)

30 17
100 5
20 2
10
10
10

0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 1000
0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=67°C/W 40

0.1

PD
0.01

Single Pulse Ton

T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 0 : Sep 2010 www.aosmd.com Page 5 of 11

 AON6908A

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V
VDS=30V, VGS=0V 0.5
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 100
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.5 2 V
ID(ON) On state drain current VGS=10V, VDS=5V 200 A
VGS=10V, ID=20A 2.9 3.6
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 4.3 5.2
VGS=4.5V, ID=20A 3.3 4.5 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 115 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 0.7 V
IS Maximum Body-Diode Continuous CurrentG 80 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3500 4380 5260 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 340 490 640 pF
Crss Reverse Transfer Capacitance 160 280 400 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.3 0.7 1.1 Ω
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge 24 31 38 nC
Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A 11 nC
Qgd Gate Drain Charge 9 nC
tD(on) Turn-On DelayTime 10 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 6 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 50 ns
tf Turn-Off Fall Time 7 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 9 12 15 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 17 22 27 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0 : Sep 2010 www.aosmd.com Page 6 of 11

 AON6908A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

150 100
10V 4.5V
VDS=5V
3V
120 80

7V
90 60

ID(A)
ID (A)

40 125°C
60

30 20
25°C
VGS=2.5V

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

5 2

Normalized On-Resistance
4 1.8
VGS=4.5V
VGS=4.5V
1.6 ID=20A
RDS(ON) (mΩ )

3
17
1.4 5
VGS=10V
2
2
1.2 VGS=10V
ID=20A
10
1
1

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E) 18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)

10 1.0E+02
ID=20A
1.0E+01 125°C
8
1.0E+0040
RDS(ON) (mΩ )

6
125°C 1.0E-01 25°C
IS (A)

4 1.0E-02

1.0E-03
2 25°C
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON6908A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 6000
VDS=15V
ID=20A 5000
8 Ciss

Capacitance (pF)
4000
VGS (Volts)

6
3000
4
2000

2 Coss
1000 Crss

0 0
0 20 40 60 80 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 RDS(ON) 10µs 160

10µs TJ(Max)=150°C
limited
TC=25°C
ID (Amps)

Power (W)

10.0
100µs 120 17
DC 5
1ms
1.0 10ms 80 2
10
TJ(Max)=150°C
0.1 40
TC=25°C

0.0
0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=1.6°C/W 40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 0 : Sep 2010 www.aosmd.com Page 8 of 11

 AON6908A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000 100
IAR (A) Peak Avalanche Current

TA=25°C 80

Power Dissipation (W)

TA=100°C
100
60

TA=150°C 40
10
TA=125°C
20

1 0
1 10 100 1000 0 25 50 75 100 125 150
µs)
Time in avalanche, tA (µ TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

100 10000

TA=25°C
80 1000
Current rating ID(A)

Power (W)

60
17
100
5
2
40
10 10

20
1
0.00001 0.001 0.1 10 1000
0
0 25 50 75 100 125 150 0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=60°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON6908A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01 0.7
20A 10A 5A
0.6
1.0E-02
0.5
VDS=30V 0.4

VSD (V)
IR (A)

1.0E-03
0.3 IS=1A
VDS=15V
0.2
1.0E-04
0.1

1.0E-05 0
0 50100 150 200 0 50 100 150 200
Temperature (°C) Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs. Figure 18: Diode Forward voltage vs. Junction
Junction Temperature Temperature

40 12 14 3
di/dt=800A/µs
di/dt=800A/µs 12 125ºC
35 2.5
10
125ºC 10 trr
30 2
25ºC
8
Qrr (nC)

8
trr (ns)
Irm (A)

25 1.5

S
Qrr 25ºC 6
6 125ºC
20 1
125ºC 4 S
4 0.5
15 Irm 2 25ºC
25ºC
10 2 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IS (A) IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak Figure 19: Diode Reverse Recovery Time and
Current vs. Conduction Current Softness Factor vs. Conduction Current

30 20 21 4
Is=20A Is=20A
18 3.5
25
125ºC 15 trr 25ºC 3
15
20
2.5
Qrr (nC)

25ºC 12
trr (ns)
Irm (A)

125ºC
15 Qrr 10 2
S

9
25ºC 1.5
10
6 S
125ºC 5 1
5 Irm 3
125º 0.5
25ºC
0 0 0 0
0 200
400 600 800 1000 0 200 400 600 800 1000
µs)
di/dt (A/µ µs)
di/dt (A/µ
Figure 20: Diode Reverse Recovery Charge and Peak Figure 21: Diode Reverse Recovery Time and
Current vs. di/dt Softness Factor vs. di/dt

Rev 0 : Sep 2010 www.aosmd.com Page 10 of 11

 AON6908A

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 0 : Sep 2010 www.aosmd.com Page 11 of 11