AO4441

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4441 uses advanced trench technology to VDS (V) = -60V

provide excellent RDS(ON), and ultra-low low gate ID = -4 A (VGS = -10V)
charge. This device is suitable for use as a load RDS(ON) < 100mΩ (VGS = -10V)
switch or in PWM applications. Standard Product RDS(ON) < 130mΩ (VGS = -4.5V)
AO4441 is Pb-free (meets ROHS & Sony 259
specifications). AO4441L is a Green Product
ordering option. AO4441 and AO4441L are
electrically identical.

D
SOIC-8
Top View

S D
S D
S D G
G D S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C -4
Current A TA=70°C ID -3.1 A
B
Pulsed Drain Current IDM -20
TA=25°C 3.1
PD W
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 24 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 54 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 21 30 °C/W

Alpha & Omega Semiconductor, Ltd.

AO4441

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -60 V
VDS=-48V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 -2.1 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -20 A
VGS=-10V, ID=-4A 80 100
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 130
VGS=-4.5V, ID=-3A 102 130 mΩ
gFS Forward Transconductance VDS=-5V, ID=-4A 10 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.77 -1 V
IS Maximum Body-Diode Continuous Current -4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 930 1120 pF
Coss Output Capacitance VGS=0V, VDS=-30V, f=1MHz 85 pF
Crss Reverse Transfer Capacitance 35 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 7.2 9 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 16 20 nC
Qg(4.5V) Total Gate Charge (4.5V) 8 10 nC
VGS=-10V, VDS=-30V, ID=-4A
Qgs Gate Source Charge 2.5 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 8 ns
tr Turn-On Rise Time VGS=-10V, VDS=-30V, RL=7.5Ω, 3.8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 31.5 ns
tf Turn-Off Fall Time 7.5 ns
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs 27 35 ns
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs 32 nC

2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any ien
given
application
application
depends
dependson on
thethe
user's
user's
specific
specific
board
board
design.
design.
TheThe
current
current
rating
rating
is based
is based
on on
thethe
t ≤ 10s
t ≤ 10s
thermal
thermal
resistance
resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev 1: Sept 2005

Alpha & Omega Semiconductor, Ltd.

AO4441

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

20 10

-10V -4.5V VDS=-5V

-5.0V 8
15 -4.0V
-6.0V

6
-ID (A)

-ID(A)
10
-3.5V
4
125°C
5
VGS=-3.0V 2
25°C

0
0
0 1 2 3 4 5
1 1.5 2 2.5 3 3.5 4
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics

110 2

VGS=-4.5V
Normalized On-Resistance

1.8 VGS=-10V
100 ID=-4A
1.6
RDS(ON) (mΩ)

1.4 VGS=-4.5V
90
ID=-3A
ID=-3A
1.2

80 VGS=-10V
1

0.8
70 0 25 50 75 100 125 150 175
0 2 4 6 8 10
Temperature (°C)
-ID (A) Figure 4: On-Resistance vs. Junction
Figure 3: On-Resistance vs. Drain Current and Temperature
Gate Voltage

200 1.0E+01
ID=-4A
180 1.0E+00

160 125°C 125°C

1.0E-01
RDS(ON) (mΩ)

140 1.0E-02
-IS (A)

120
1.0E-03

100
1.0E-04
25°C
80 25°C
1.0E-05
60
2 4 6 8 10 1.0E-06
0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts)
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4441

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

10 1500
VDS=-30V
ID=-4A
8
Ciss

Capacitance (pF)
1000
-VGS (Volts)

4
500
2 Coss Crss

0
0
0 10 20
0 10 20 30 40 50 60
-Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics

100.0
40
TJ(Max)=150°C, TA=25°C TJ(Max)=150°C
TA=25°C
RDS(ON) 30
10.0 limited 100µs 10µs
-ID (Amps)

Power (W)

1ms
20
10ms
1.0 0.1s
1s 10
10s DC

0.1 0
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=40°C/W
Thermal Resistance

PD
0.1

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.