BCV27 — NPN Darlington Transistor

BCV27
NPN Darlington Transistor

Description
C
This device is designed for applications requiring
extremely high current gain at collector currents to 1.0 A.
Sourced from process 05. E
SOT-23 B
Mark: FF

Ordering Information
Part Number Marking Package Packing Method
BCV27 FF SOT-23 3L Tape and Reel

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 10 V
IC Collector Current - Continuous 1.2 A
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.

© 1997 Semiconductor Components Industries, LLC Publication Order Number:

September-2017, Rev. 2 BCV27/D
 BCV27 — NPN Darlington Transistor
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Max. Unit

Total Device Dissipation 350 mW
PD
Derate Above 25°C 2.8 mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W

Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Unit

V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 10 V
ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 0.1 μA
IEBO Emitter Cut-Off Current VEB = 10 V, IC = 0 0.1 μA
IC = 1.0 mA, VCE = 5.0 V 4000
hFE DC Current Gain IC = 10 mA, VCE = 5.0 V 10000
IC = 100 mA, VCE = 5.0 V 20000
VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.0 V
VBE(sat) Base-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
IC = 30 mA, VCE = 5.0 V,
fT Current Gain - Bandwidth Product 220 MHz
f = 100 MHz
VCB = 30 V, IE = 0,
Cc Collector Capacitance 3.5 pF
f = 1.0 MHz

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 BCV27 — NPN Darlington Transistor
Typical Performance Characteristics

VCESAT - COLLECTOR EMITTE R VOLTAGE (V)

h F E - TYPICAL PULSED CURRENT GAIN (K)

250 1.6
VCE = 5V β = 1000
200 125 °C 1.2

150 - 40 °C
0.8
25 °C
100 25°C
125 °C
- 40 °C 0.4
50

0 0
0.001 0.01 0.1 1 1 10 100 1000
I C - COLLECTOR CURRENT (A) I C - COLLECTOR CURRE NT (mA)

Figure 1. Typical Pulsed Current Gain vs. Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current Collector Current

V BEON - BAS E EMITTER ON VOLTAGE (V)

V BESAT - BASE EMITTE R VOLTAGE (V)

2 2
β = 1000

1.6 - 40 °C 1.6 - 40 °C
25 °C 25 °C
1.2 1.2
125 °C 125 °C

0.8 0.8

VCE = 5V
0.4 0.4

0 0
1 10 100 1000 1 10 100 1000
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRE NT (mA)

Figure 3. Base-Emitter Saturation Voltage vs. Figure 4. Base Emitter On Voltage vs.
Collector Current Collector Current
I CBO - COLLE CTOR CURRENT (nA)

100
BVCER - BREAKDOWN VOLTAGE (V)

62.5
VCB = 30V

62
10

61.5

1
61

60.5
0.1
60

0.01 59.5
25 50 75 100 125 0.1 1 10 100 1000
T A - AMBIE NT TEMP ERATURE ( ° C) RESISTANCE (k Ω )

Figure 5. Collector Cut-Off Current vs. Figure 6. Collector-Emitter Breakdown Voltage with
Ambient Temperature Resistance Between Emitter-Base

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 BCV27 — NPN Darlington Transistor
Typical Performance Characteristics (Continued)

f T - GAIN BANDWIDTH PRODUCT (MHz)

500

f = 1.0 MHz V ce = 5V
20 400
CAPACITANCE (pF)

300
10
Cib
200
5
Cob
100

2 0
0.1 1 10 100 1 10 20 50 100 150
V - COLLECTOR VOLTAGE(V) IC - COLLECTOR CURRENT (mA)

Figure 7. Input and Output Capacitance vs. Figure 8. Gain Bandwidth Product vs.
Reverser Voltage Collector Current

350
P D - POWER DISSIPATION (mW)

300

250
SOT-23
200

150

100

50

0
0 25 50 75 100 125 150
TEMPERATURE ( o C)

Figure 9. Power Dissipation vs. Ambient Temperature

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