Silicon NPN Power Transistors: Savantic Semiconductor Product Specification
Silicon NPN Power Transistors: Savantic Semiconductor Product Specification
Silicon NPN Power Transistors: Savantic Semiconductor Product Specification
DESCRIPTION
·With TO-220C package
·Collector-emitter sustaining voltage
VCEO(sus)=400V(Min)
·Collector-emitter saturation voltage
VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A
·Switching time-tf=1.0µs(Max.)@IC=3.0A
APPLICATIONS
·Designed for use in high-voltage ,high-
speed ,power switching in inductive circuit,
particularly suited for 115 and 220V switch-
mode applications such as switching
regulator’s ,inverters,,DC-DC and converter
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 Emitter
IC Collector current 7 A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
CHARACTERISTICS
Tj=25 unless otherwise specified
VCE=400V ;VBE(off)=-1.5V 10 µA
ICEX Collector cut-off current
TC=125 5.0 mA
Switching times
hFE-2 Classifications
M L K
2
SavantIC Semiconductor Product Specification
PACKAGE OUTLINE
3
SavantIC Semiconductor Product Specification