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    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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    Thiago Garcia
    The 2SC3320 is a high voltage, high speed switching silicon NPN power transistor in a TO-3PN package. It is suitable for applications such as switching regulators, ultrasonic generators, high frequency inverters, and general purpose power amplifiers. The document provides maximum ratings, thermal characteristics, electrical characteristics, switching times for a resistive load, and the package outline dimensions for the 2SC3320 transistor.

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    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Thiago Garcia
    58 views4 pages
    The 2SC3320 is a high voltage, high speed switching silicon NPN power transistor in a TO-3PN package. It is suitable for applications such as switching regulators, ultrasonic generators, high frequency inverters, and general purpose power amplifiers. The document provides maximum ratings, thermal characteristics, electrical characteristics, switching times for a resistive load, and the package outline dimensions for the 2SC3320 transistor.

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    2SC3320_SavantIC.pdf

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    The 2SC3320 is a high voltage, high speed switching silicon NPN power transistor in a TO-3PN package. It is suitable for applications such as switching regulators, ultrasonic generators, high frequency inverters, and general purpose power amplifiers. The document provides maximum ratings, thermal characteristics, electrical characteristics, switching times for a resistive load, and the package outline dimensions for the 2SC3320 transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    58 views4 pages

    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Thiago Garcia
    The 2SC3320 is a high voltage, high speed switching silicon NPN power transistor in a TO-3PN package. It is suitable for applications such as switching regulators, ultrasonic generators, high frequency inverters, and general purpose power amplifiers. The document provides maximum ratings, thermal characteristics, electrical characteristics, switching times for a resistive load, and the package outline dimensions for the 2SC3320 transistor.

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    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors


    www.DataSheet4U.com
    2SC3320

    DESCRIPTION
    ·With TO-3PN package
    ·High voltage ,high speed switching
    ·High reliability

    APPLICATIONS
    ·Switching regulators
    ·Ultrasonic generators
    ·High frequency inverters
    ·General purpose power amplifiers

    PINNING

    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-3PN) and symbol
    3 Emitter

    Absolute maximum ratings(Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 500 V

    VCEO Collector-emitter voltage Open base 400 V

    VEBO Emitter-base voltage Open collector 7 V

    IC Collector current 15 A

    IB Base current 5 A

    PC Collector power dissipation TC=25 80 W

    Tj Junction temperature 150

    Tstg Storage temperature -65~150

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER VALUE UNIT

    Rth (j-c) Thermal resistance from junction to case 1.56 /W


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors


    www.DataSheet4U.com
    2SC3320

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V

    V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V

    V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V

    VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.0 V

    VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V

    ICBO Collector cut-off current VCB=500V; IE=0 1.0 mA

    IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA

    hFE DC current gain IC=6A ; VCE=5V 10

    Switching times resistive load

    ton Turn-on time 0.5 µs


    IC=7.5A IB1=1.5A
    ts Storage time IB2=-3A RL=20C 1.5 µs
    PW=20µs;Duty=<2%

    tf Fall time 0.15 µs

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors


    www.DataSheet4U.com
    2SC3320

    PACKAGE OUTLINE

    Fig.2 outline dimensions(unindicated tolerance:±0.10 mm)

    3
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors


    www.DataSheet4U.com
    2SC3320

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