Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 41 views

    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Vitorio Logo
    The document provides product specification details for the SavantIC Semiconductor 2SD2222 silicon NPN power transistor. Key details include that it has a TO-3PL package, is a complement to the 2SB1470 transistor, and has a high DC current gain and low saturation voltage. It is intended for power amplification applications. The document lists maximum ratings, characteristics such as breakdown voltage and current gain, and package outline dimensions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Vitorio Logo
    41 views3 pages
    The document provides product specification details for the SavantIC Semiconductor 2SD2222 silicon NPN power transistor. Key details include that it has a TO-3PL package, is a complement to the 2SB1470 transistor, and has a high DC current gain and low saturation voltage. It is intended for power amplification applications. The document lists maximum ratings, characteristics such as breakdown voltage and current gain, and package outline dimensions.

    Original Description:

    d22

    Original Title

    2SD2222_SavantIC

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The document provides product specification details for the SavantIC Semiconductor 2SD2222 silicon NPN power transistor. Key details include that it has a TO-3PL package, is a complement to the 2SB1470 transistor, and has a high DC current gain and low saturation voltage. It is intended for power amplification applications. The document lists maximum ratings, characteristics such as breakdown voltage and current gain, and package outline dimensions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    41 views3 pages

    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Vitorio Logo
    The document provides product specification details for the SavantIC Semiconductor 2SD2222 silicon NPN power transistor. Key details include that it has a TO-3PL package, is a complement to the 2SB1470 transistor, and has a high DC current gain and low saturation voltage. It is intended for power amplification applications. The document lists maximum ratings, characteristics such as breakdown voltage and current gain, and package outline dimensions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD2222

    DESCRIPTION
    ·With TO-3PL package
    www.datasheet4u.com
    ·Complement to type 2SB1470
    ·High DC current gain
    ·Low saturation voltage VCE(sat)
    ·DARLINGTON

    APPLICATIONS
    ·For power amplification

    PINNING

    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-3PL) and symbol
    3 Emitter

    Absolute maximum ratings(Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 160 V

    VCEO Collector-emitter voltage Open base 160 V

    VEBO Emitter-base voltage Open collector 5 V

    IC Collector current 8 A

    ICM Collector current-peak 15 A

    TC=25 120
    PC Collector power dissipation W
    Ta=25 3.5

    Tj Junction temperature 150

    Tstg Storage temperature -55~150


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD2222

    CHARACTERISTICS
    Tj=25 unless otherwise specified
    www.datasheet4u.com
    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 160 V

    VCEsat Collector-emitter saturation voltage IC=7A ;IB=7mA 3.0 V

    VBEsat Base-emitter saturation voltage IC=7A ;IB=7mA 3.0 V

    ICBO Collector cut-off current VCB=160V; IE=0 100 µA

    ICEO Collector cut-off current VCE=160V; IB=0 100 µA

    IEBO Emitter cut-off current VEB=5V; IC=0 100 µA

    hFE-1 DC current gain IC=1A ; VCE=5V 1000

    hFE-2 DC current gain IC=7A ; VCE=5V 3500 20000

    fT Transition frequency IC=0.5A ; VCE=10V;f=1MHz 20 MHz

    Switching times

    ton Turn-on time 2.0 µs

    IC=7A ;IB1=-IB2=7mA
    ts Storage time 6.0 µs
    VCC=50V

    tf Fall time 1.2 µs

    hFE-2 classifications
    Q P

    3500-10000 7000-20000

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD2222

    PACKAGE OUTLINE

    www.datasheet4u.com

    Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)

    You might also like