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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD5072

DESCRIPTION
·With TO-3PML package
·High speed
·High breakdown voltage
·Built-in damper diode

APPLICATIONS
·Color TV horizontal output application

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 5 A

ICM Collector current-peak 16 A

PC Collector power dissipation TC=25 60 W

Tj Junction temperature 150

Tstg Storage temperature -50~150

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD5072

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.8A 5.0 V

VBEsat Base-emitter saturation voltage IC=4 A;IB=0.8A 1.5 V

ICBO Collector cut-off current VCB=800V; IE=0 10 µA

IEBO Emitter cut-off current VEB=4V; IC=0 40 200 mA

hFE DC current gain IC=1A ; VCE=5V 8

fT Transition frequency IC=1A ; VCE=10V 3 MHz

VF Diode forward voltage IF=5A 2.0 V

IC=4A;RL=50=;VCC=200V
tf Fall time 0.4 µs
IB1=0.8A;IB2=-1.6A

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD5072

PACKAGE OUTLINE

Fig.2 Outline dimensions

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