Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 38 views

    Silicon NPN Darlington Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Nazo Fs
    This document provides product specifications for the 2SD2493 silicon NPN Darlington power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and pinning, absolute maximum ratings, electrical characteristics at 25°C including current gain, breakdown voltages and switching times, and the package outline dimensions. The transistor is intended for audio, series regulator, and general purpose applications requiring currents up to 6A.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Silicon NPN Darlington Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Nazo Fs
    38 views3 pages
    This document provides product specifications for the 2SD2493 silicon NPN Darlington power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and pinning, absolute maximum ratings, electrical characteristics at 25°C including current gain, breakdown voltages and switching times, and the package outline dimensions. The transistor is intended for audio, series regulator, and general purpose applications requiring currents up to 6A.

    Original Description:

    Original Title

    2sd2493

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides product specifications for the 2SD2493 silicon NPN Darlington power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and pinning, absolute maximum ratings, electrical characteristics at 25°C including current gain, breakdown voltages and switching times, and the package outline dimensions. The transistor is intended for audio, series regulator, and general purpose applications requiring currents up to 6A.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    38 views3 pages

    Silicon NPN Darlington Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Nazo Fs
    This document provides product specifications for the 2SD2493 silicon NPN Darlington power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and pinning, absolute maximum ratings, electrical characteristics at 25°C including current gain, breakdown voltages and switching times, and the package outline dimensions. The transistor is intended for audio, series regulator, and general purpose applications requiring currents up to 6A.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    SavantIC Semiconductor Product Specification

    Silicon NPN Darlington Power Transistors 2SD2493

    DESCRIPTION
    ·With TO-3PN package
    ·Complement to type 2SB1624

    APPLICATIONS
    ·Audio ,series regulator and general
    purpose applications

    PINNING

    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-3PN) and symbol
    3 Emitter

    Absolute maximum ratings(Ta= )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 110 V

    VCEO Collector-emitter voltage Open base 110 V

    VEBO Emitter-base voltage Open collector 5 V

    IC Collector current 6 A

    IB Base current 1 A

    PC Collector power dissipation TC=25 60 W

    Tj Junction temperature 150

    Tstg Storage temperature -55~150


    SavantIC Semiconductor Product Specification

    Silicon NPN Darlington Power Transistors 2SD2493

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 110 V

    VCEsat Collector-emitter saturation voltage IC=5A ;IB=5mA 2.5 V

    VBEsat Base-emitter saturation voltage IC=5A ;IB=5mA 3.0 V

    ICBO Collector cut-off current VCB=110V; IE=0 100 µA

    IEBO Emitter cut-off current VEB=5V; IC=0 100 µA

    hFE DC current gain IC=5A ; VCE=4V 5000

    Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 55 pF

    fT Transition frequency IC=2A ; VCE=12V 60 MHz

    Switching times

    ton Turn-on time 0.8 µs


    IC=5A;RL=6A
    ts Storage time IB1=- IB2=5mA 6.2 µs
    VCC=30V
    tf Fall time 1.1 µs

    hFE Classifications
    O P Y

    5000-12000 6500-20000 15000-30000

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Darlington Power Transistors 2SD2493

    PACKAGE OUTLINE

    Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

    You might also like