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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3746

DESCRIPTION
·With TO-220F package
·Complement to type 2SA1469
·Low saturation voltage
·Excellent current dependence of hFE
·Short switching time

APPLICATIONS
·Various inductance of lamp drivers for
electronic equipment
·Inverters ,converters
·Switching regulator ,driver

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-220F) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 80 V

VCEO Collector-emitter voltage Open base 60 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 5 A

ICM Collector current-peak 7 A

Ta=25 2
PC Collector dissipation W
TC=25 20

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3746

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=> 60 V

V(BR)CBO Collector-base breakdown voltage IC=10mA ;IE=0 80 V

V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.125A 0.4 V

ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA

IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA

hFE DC current gain IC=1A ; VCE=2V 70 280

fT Transition frequency IC=1A ; VCE=5V 100 MHz

Switching times

ton Turn-on time 0.1 µs

IC=2.0A; IB1=-IB2=0.1A
ts Storage time 0.5 µs
VCC=20V ,RL=10D

tf Fall time 0.1 µs

hFE Classifications

Q R S

70-140 100-200 140-280

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3746

PACKAGE OUTLINE

Fig.2 Outline dimensions

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3746

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