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    Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    Ilyes Chaieb
    The document provides product specifications for the Inchange Semiconductor 2SC3892A silicon NPN power transistor. The transistor is in a TO-3P(H)IS package and is designed for horizontal deflection output applications. It has a maximum collector current of 7A, collector-emitter voltage of 600V, and power dissipation of 50W. Key electrical characteristics include a saturation voltage of 5V maximum, current gain of 8-12, and transition frequency of 1-3MHz.

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    Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    Ilyes Chaieb
    19 views3 pages
    The document provides product specifications for the Inchange Semiconductor 2SC3892A silicon NPN power transistor. The transistor is in a TO-3P(H)IS package and is designed for horizontal deflection output applications. It has a maximum collector current of 7A, collector-emitter voltage of 600V, and power dissipation of 50W. Key electrical characteristics include a saturation voltage of 5V maximum, current gain of 8-12, and transition frequency of 1-3MHz.

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    2sc3892a

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    The document provides product specifications for the Inchange Semiconductor 2SC3892A silicon NPN power transistor. The transistor is in a TO-3P(H)IS package and is designed for horizontal deflection output applications. It has a maximum collector current of 7A, collector-emitter voltage of 600V, and power dissipation of 50W. Key electrical characteristics include a saturation voltage of 5V maximum, current gain of 8-12, and transition frequency of 1-3MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    19 views3 pages

    Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    Ilyes Chaieb
    The document provides product specifications for the Inchange Semiconductor 2SC3892A silicon NPN power transistor. The transistor is in a TO-3P(H)IS package and is designed for horizontal deflection output applications. It has a maximum collector current of 7A, collector-emitter voltage of 600V, and power dissipation of 50W. Key electrical characteristics include a saturation voltage of 5V maximum, current gain of 8-12, and transition frequency of 1-3MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SC3892A

    DESCRIPTION ·
    ·With TO-3P(H)IS package
    ·Built-in damper diode
    ·High voltage ,high speed

    APPLICATIONS
    ·Horizontal deflection output applications

    PINNING

    PIN DESCRIPTION

    1 Base

    2 Collector

    Fig.1 simplified outline (TO-3P(H)IS) and symbol


    3 Emitter

    Absolute maximum ratings (Ta=25℃)


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 1500 V

    VCEO Collector-emitter voltage Open base 600 V

    VEBO Emitter-base voltage Open collector 5 V

    IC Collector current 7 A

    ICM Collector current-peak 14 A

    IB Base current 3.5 A

    PC Collector power dissipation TC=25℃ 50 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SC3892A

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V

    VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A 5.0 V

    VBEsat Base-emitter saturation voltage IC=5A ;IB=1.2A 1.5 V

    ICBO Collector cut-off current VCB=500V; IE=0 10 μA

    IEBO Emitter cut-off current VEB=5V; IC=0 66 200 mA

    hFE DC current gain IC=1A ; VCE=5V 8 12

    fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz

    COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 210 pF

    VF Diode forward voltage IF=5A 2.0 V

    ts Storage time 2.5 μs


    Resistive load
    ICP=5A ;IB1=1A;IB2=-2A;RL=40Ω
    tf Fall time 0.2 μs

    2
    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SC3892A

    PACKAGE OUTLINE

    Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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