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    Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

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    giambi-1
    This document provides product specifications for the 2SD1399 silicon NPN power transistor from Inchange Semiconductor. The transistor is housed in a TO-3PN package and is designed for high voltage, high reliability applications such as horizontal output. Key specifications include a collector-emitter breakdown voltage of 800V, saturation voltage below 5V, DC current gain of 8 or higher, and fall time of 0.7 microseconds or less.

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    Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    giambi-1
    25 views3 pages
    This document provides product specifications for the 2SD1399 silicon NPN power transistor from Inchange Semiconductor. The transistor is housed in a TO-3PN package and is designed for high voltage, high reliability applications such as horizontal output. Key specifications include a collector-emitter breakdown voltage of 800V, saturation voltage below 5V, DC current gain of 8 or higher, and fall time of 0.7 microseconds or less.

    Original Title

    2SD1399 datasheet

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    This document provides product specifications for the 2SD1399 silicon NPN power transistor from Inchange Semiconductor. The transistor is housed in a TO-3PN package and is designed for high voltage, high reliability applications such as horizontal output. Key specifications include a collector-emitter breakdown voltage of 800V, saturation voltage below 5V, DC current gain of 8 or higher, and fall time of 0.7 microseconds or less.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    25 views3 pages

    Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    giambi-1
    This document provides product specifications for the 2SD1399 silicon NPN power transistor from Inchange Semiconductor. The transistor is housed in a TO-3PN package and is designed for high voltage, high reliability applications such as horizontal output. Key specifications include a collector-emitter breakdown voltage of 800V, saturation voltage below 5V, DC current gain of 8 or higher, and fall time of 0.7 microseconds or less.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD1399

    DESCRIPTION
    ·With TO-3PN package
    ·Built-in damper diode
    ·High voltage ,high reliability
    ·High speed switching

    APPLICATIONS
    ·For horizontal output applications

    PINNING

    PIN DESCRIPTION

    1 Base

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-3PN) and symbol
    3 Emitter

    Absolute maximum ratings (Ta=25℃)


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 1500 V

    VCEO Collector-emitter voltage Open base 800 V

    VEBO Emitter-base voltage Open collector 7 V

    IC Collector current (DC) 6 A

    ICM Collector current-peak 16 A

    PC Collector power dissipation TC=25℃ 50 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD1399

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector- emitter breakdown voltage IC=100mA; RBE=∞ 800 V

    V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 1500 V

    V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 7 V

    VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 5.0 V

    VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V

    ICBO Collector cut-off current VCB=800V; IE=0 10 μA

    IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA

    hFE DC current gain IC=1A ; VCE=5V 8

    fT Transition frequency IC=1A ; VCE=10V 3 MHz

    IC=5A;IB1=1A; IB2=-2A,
    tf Fall time 0.7 μs
    VCC=200V; RL=40Ω

    VF Diode forward voltage IEC=6A 2.0 V

    2
    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD1399

    PACKAGE OUTLINE

    Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)

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