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2 SC 2307

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JMnic Product Specification

Silicon NPN Power Transistors 2SC2307

DESCRIPTION
・With TO-3PN package
・High voltage ,high speed

APPLICATIONS
・For power switching applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL PARAMETER CONDITIONS MAX UNIT

VCBO Collector-base voltage Open emitter 500 V

VCEO Collector-emitter voltage Open base 400 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current (DC) 12 A

PC Collector power dissipation TC=25℃ 100 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


JMnic Product Specification

Silicon NPN Power Transistors 2SC2307

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 400 V

V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V

VCEsat Collector-emitter saturation voltage IC=7A; IB=1.4A 0.5 V

VBEsat Base-emitter saturation voltage IC=7A; IB=1.4A 1.3 V

ICBO Collector cut-off current VCB=500V; IE=0 100 μA

IEBO Emitter cut-off current VEB=7V; IC=0 100 μA

hFE DC current gain IC=7A ; VCE=4V 10

fT Transition frequency IC=1A ; VCE=12V 18 MHz

2
JMnic Product Specification

Silicon NPN Power Transistors 2SC2307

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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