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    2sd2061 PDF

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    Daniel Paredes
    This document specifies a silicon NPN power transistor with a TO-220Fa package. It has low saturation voltage, excellent DC current gain characteristics, and a wide safe operating area, making it suitable for low frequency power amplifier applications. The document provides maximum ratings, characteristics, and package outline dimensions for the 2SD2061 transistor.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2sd2061 PDF

    Uploaded by

    Daniel Paredes
    93 views3 pages
    This document specifies a silicon NPN power transistor with a TO-220Fa package. It has low saturation voltage, excellent DC current gain characteristics, and a wide safe operating area, making it suitable for low frequency power amplifier applications. The document provides maximum ratings, characteristics, and package outline dimensions for the 2SD2061 transistor.

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    2sd2061.pdf

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    This document specifies a silicon NPN power transistor with a TO-220Fa package. It has low saturation voltage, excellent DC current gain characteristics, and a wide safe operating area, making it suitable for low frequency power amplifier applications. The document provides maximum ratings, characteristics, and package outline dimensions for the 2SD2061 transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    93 views3 pages

    2sd2061 PDF

    Uploaded by

    Daniel Paredes
    This document specifies a silicon NPN power transistor with a TO-220Fa package. It has low saturation voltage, excellent DC current gain characteristics, and a wide safe operating area, making it suitable for low frequency power amplifier applications. The document provides maximum ratings, characteristics, and package outline dimensions for the 2SD2061 transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    Product Specification www.jmnic.

    com

    Silicon NPN Power Transistors 2SD2061

    DESCRIPTION ・
    ・With TO-220Fa package
    ・Low saturation voltage
    ・Excellent DC current gain characteristics
    ・Wide safe operating area

    APPLICATIONS
    ・For low frequency power
    amplifier applications

    PINNING

    PIN DESCRIPTION

    1 Base

    2 Collector

    3 emitter

    Fig.1 simplified outline (TO-220Fa) and symbol

    ABSOLUTE MAXIMUM RATINGS AT Tc=25℃


    SYMBOL PARAMETER CONDITIONS VALUE UNIT
    VCBO Collector-base voltage Open emitter 80 V

    VCEO Collector-emitter voltage Open base 60 V

    VEBO Emitter-base voltage Open collector 5 V

    IC Collector current (DC) 3 A

    ICM Collector current-Peak 6 A

    PC Collector power dissipation TC=25℃ 30 W

    PC Collector power dissipation Ta=25℃ 2 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃

    JMnic
    Product Specification www.jmnic.com

    Silicon NPN Power Transistors 2SD2061

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified
    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO Collector-emitter breakdown voltage IC=1mA , IB=0 60 V

    VCBO Collector-base breakdown voltage IC=50μA , IE=0 80 V

    VEBO Emitter-base breakdown voltage IE=50μA , IC=0 5 V

    VCEsat Collector-emitter saturation voltage IC=2A IB=0.2A 1.0 V

    VBEsat Emitter-base saturation voltage IC=2A IB=0.2A 1.5 V

    ICBO Collector cut-off current VCB=60V IE=0 10 μA

    IEBO Emitter cut-off current VEB=4V; IC=0 10 μA

    hFE DC current gain IC=0.5A ; VCE=5V 100 320

    fT Transition frequency IC=0.5A ; VCE=5V 8 MHz

    Cob Output capacitance IE=0 ; VCB=10V ,f=1MHz 70 Pf

    JMnic
    Product Specification www.jmnic.com

    Silicon NPN Power Transistors 2SD2061

    PACKAGE OUTLINE

    Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

    JMnic

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