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  • 2SA769

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    isaiasva
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    This document provides product specifications for the 2SA769 silicon PNP power transistor from Inchange Semiconductor. It has a TO-220 package and is intended for use in low frequency power amplifier applications. Key specifications include an absolute maximum collector-base voltage of -80V, collector current of -4A, and DC current gain ranging from 60 to 240 at IC=-1A and VCE=-4V.

    Original Description:

    Silicon PNP Power Transistors

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    This document provides product specifications for the 2SA769 silicon PNP power transistor from Inchange Semiconductor. It has a TO-220 package and is intended for use in low frequency power amplifier applications. Key specifications include an absolute maximum collector-base voltage of -80V, collector current of -4A, and DC current gain ranging from 60 to 240 at IC=-1A and VCE=-4V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    105 views3 pages

    2SA769

    Uploaded by

    isaiasva
    This document provides product specifications for the 2SA769 silicon PNP power transistor from Inchange Semiconductor. It has a TO-220 package and is intended for use in low frequency power amplifier applications. Key specifications include an absolute maximum collector-base voltage of -80V, collector current of -4A, and DC current gain ranging from 60 to 240 at IC=-1A and VCE=-4V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    of 3

    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2SA769

    DESCRIPTION
    ·With TO-220 package
    ·Complement to type 2SC1827

    APPLICATIONS
    ·For low frequency power
    amplifier applicattions

    PINNING

    PIN DESCRIPTION

    1 Emitter

    Collector;connected to
    2
    mounting base

    3 Base Fig.1 simplified outline (TO-220) and symbol

    Absolute maximum ratings(Ta=25℃)


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter -80 V

    VCEO Collector-emitter voltage Open base -80 V

    VEBO Emitter-base voltage Open collector -5 V

    IC Collector current -4 A

    PC Collector power dissipation TC=25℃ 30 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2SA769

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -80 V

    V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -80 V

    VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V

    VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V

    ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA

    IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA

    hFE DC current gain IC=-1A ; VCE=-4V 60 240

    fT Transition frequency IC=-0.5A ; VCE=-10V 10 MHz

    2
    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2SA769

    PACKAGE OUTLINE

    Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

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