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  • Silicon PNP Power Transistors

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    javier byron
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    This document provides product specifications for the 2SA1943 silicon PNP power transistor. It includes descriptions of applications, pinning, absolute maximum ratings, characteristics, package outline, and four figures. The transistor is in a TO-3PL package and is recommended for 100W high fidelity audio frequency amplifier output stages. Key specifications include a collector-emitter breakdown voltage of -230V, saturation voltage of -3.0V, current gain of 35-160, and transition frequency of 30MHz.

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    Transistor

    Original Title

    2sa1943

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    This document provides product specifications for the 2SA1943 silicon PNP power transistor. It includes descriptions of applications, pinning, absolute maximum ratings, characteristics, package outline, and four figures. The transistor is in a TO-3PL package and is recommended for 100W high fidelity audio frequency amplifier output stages. Key specifications include a collector-emitter breakdown voltage of -230V, saturation voltage of -3.0V, current gain of 35-160, and transition frequency of 30MHz.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    67 views4 pages

    Silicon PNP Power Transistors

    Uploaded by

    javier byron
    This document provides product specifications for the 2SA1943 silicon PNP power transistor. It includes descriptions of applications, pinning, absolute maximum ratings, characteristics, package outline, and four figures. The transistor is in a TO-3PL package and is recommended for 100W high fidelity audio frequency amplifier output stages. Key specifications include a collector-emitter breakdown voltage of -230V, saturation voltage of -3.0V, current gain of 35-160, and transition frequency of 30MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
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    of 4

    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1943

    DESCRIPTION
    ・With TO-3PL package
    ・Complement to type 2SC5200

    APPLICATIONS
    ・Power amplifier applications
    ・Recommended for 100W high fidelity audio
    frequency amplifier output stage

    PINNING

    PIN DESCRIPTION

    1 Emitter

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-3PL) and symbol
    3 Base

    Absolute maximum ratings(Ta=25℃)


    SYMBOL PARAMETER CONDITIONS MAX UNIT

    VCBO Collector-base voltage Open emitter -230 V

    VCEO Collector-emitter voltage Open base -230 V

    VEBO Emitter-base voltage Open collector -5 V

    IC Collector current -15 A

    IB Base current -1.5 A

    PC Collector power dissipation TC=25℃ 150 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1943

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -230 V

    VCEsat Collector-emitter saturation voltage IC=-8A IB=-0.8A -3.0 V

    VBE Base-emitter voltage IC=-7A ; VCE=-5V -1.5 V

    ICBO Collector cut-off current VCB=-230V; IE=0 -5 μA

    IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA

    hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160

    hFE-2 DC current gain IC=-7A ; VCE=-5V 35

    fT Transition frequency IC=-1A ; VCE=-5V 30 MHz

    COB Collector output capacitance f=1MHz;VCB=-10V 360 pF

    ‹ hFE-1 classifications

    R O

    55-110 80-160

    2
    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1943

    PACKAGE OUTLINE

    Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)

    3
    JMnic Product Specification

    Silicon Power Transistors 2SA1943

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